Markus Cäsar

494 total citations
17 papers, 430 citations indexed

About

Markus Cäsar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Markus Cäsar has authored 17 papers receiving a total of 430 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Markus Cäsar's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (7 papers). Markus Cäsar is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (7 papers). Markus Cäsar collaborates with scholars based in Germany, Netherlands and United Kingdom. Markus Cäsar's co-authors include Michael J. Uren, Martin Kuball, J.A. Croon, Marco Silvestri, G.A.M. Hurkx, Jan Šonský, R. Quay, M. Mikulla, S. Müller and Patrick Waltereit and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Markus Cäsar

17 papers receiving 424 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Markus Cäsar Germany 10 415 371 143 65 58 17 430
Hideyuki Okita Japan 6 383 0.9× 328 0.9× 150 1.0× 55 0.8× 56 1.0× 9 401
Sreenidhi Turuvekere India 7 384 0.9× 347 0.9× 165 1.2× 79 1.2× 92 1.6× 15 429
Hidekazu Umeda Japan 12 441 1.1× 452 1.2× 154 1.1× 47 0.7× 39 0.7× 16 503
S. C. Foo Singapore 9 328 0.8× 301 0.8× 180 1.3× 74 1.1× 62 1.1× 11 369
Alexander Pooth United Kingdom 8 423 1.0× 337 0.9× 177 1.2× 81 1.2× 89 1.5× 12 435
Y. K. T. Maung Singapore 8 419 1.0× 395 1.1× 246 1.7× 91 1.4× 78 1.3× 9 475
Rimma Zhytnytska Germany 10 394 0.9× 333 0.9× 177 1.2× 55 0.8× 80 1.4× 18 416
Naveen Karumuri India 6 369 0.9× 327 0.9× 163 1.1× 66 1.0× 90 1.6× 11 406
Yi-Wei Lian Taiwan 8 319 0.8× 275 0.7× 169 1.2× 40 0.6× 73 1.3× 10 346
Yuanyuan Shi China 9 363 0.9× 309 0.8× 212 1.5× 79 1.2× 61 1.1× 22 396

Countries citing papers authored by Markus Cäsar

Since Specialization
Citations

This map shows the geographic impact of Markus Cäsar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Markus Cäsar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Markus Cäsar more than expected).

Fields of papers citing papers by Markus Cäsar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Markus Cäsar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Markus Cäsar. The network helps show where Markus Cäsar may publish in the future.

Co-authorship network of co-authors of Markus Cäsar

This figure shows the co-authorship network connecting the top 25 collaborators of Markus Cäsar. A scholar is included among the top collaborators of Markus Cäsar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Markus Cäsar. Markus Cäsar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Moens, P., Abhishek Banerjee, Michael J. Uren, et al.. (2015). Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs. Bristol Research (University of Bristol). 35.2.1–35.2.4. 71 indexed citations
2.
Pooth, Alexander, Michael J. Uren, Markus Cäsar, Trevor Martin, & Martin Kuball. (2015). Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias. Journal of Applied Physics. 118(21). 33 indexed citations
3.
Uren, Michael J., et al.. (2014). Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors. Applied Physics Letters. 104(26). 89 indexed citations
4.
Uren, Michael J., Marco Silvestri, Markus Cäsar, et al.. (2014). Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths. IEEE Electron Device Letters. 35(3). 327–329. 107 indexed citations
5.
Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2013). GaN HEMTs and MMICs for space applications. Semiconductor Science and Technology. 28(7). 74010–74010. 23 indexed citations
6.
Waltereit, Patrick, Jutta Kühn, R. Quay, et al.. (2012). High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10 5 hours. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 123–126. 9 indexed citations
7.
Polyakov, V. M., M. Baeumler, Fouad Benkhelifa, et al.. (2012). Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors. Semiconductor Science and Technology. 27(12). 125003–125003. 17 indexed citations
8.
Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2012). GaN‐based high‐frequency devices and circuits: A Fraunhofer perspective. physica status solidi (a). 209(3). 491–496. 8 indexed citations
9.
Baeumler, M., Michael Dammann, Markus Cäsar, et al.. (2012). Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs. Materials science forum. 725. 79–82. 4 indexed citations
10.
Waltereit, Patrick, W. Bronner, F. van Raay, et al.. (2012). Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures. Journal of Applied Physics. 112(5). 7 indexed citations
11.
Dammann, M., M. Baeumler, Patrick Waltereit, et al.. (2012). Reverse bias stress test of GaN HEMTs for high-voltage switching applications. 105–108. 5 indexed citations
12.
Waltereit, Patrick, W. Bronner, Rudolf Kiefer, et al.. (2011). Trade‐offs between performance and reliability in AlGaN/GaN transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(2). 365–368. 4 indexed citations
13.
Dammann, M., M. Baeumler, Markus Cäsar, et al.. (2011). Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 9 indexed citations
14.
Cäsar, Markus, M. Dammann, V. V. Polyakov, et al.. (2010). Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectronics Reliability. 51(2). 224–228. 8 indexed citations
15.
Baeumler, M., V. M. Polyakov, Markus Cäsar, et al.. (2010). Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy. Journal of Electronic Materials. 39(6). 756–760. 18 indexed citations
16.
Dammann, M., Markus Cäsar, Patrick Waltereit, et al.. (2010). Reliability status of GaN transistors and MMICs in Europe. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 129–133. 12 indexed citations
17.
Dammann, M., Markus Cäsar, Patrick Waltereit, et al.. (2009). Reliability of AlGaN/GaN HEMTs under DC- and RF-operation. 19–32. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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