Serge Karboyan

858 total citations
23 papers, 673 citations indexed

About

Serge Karboyan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Serge Karboyan has authored 23 papers receiving a total of 673 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 5 papers in Materials Chemistry. Recurrent topics in Serge Karboyan's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Serge Karboyan is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Serge Karboyan collaborates with scholars based in United Kingdom, United States and Belgium. Serge Karboyan's co-authors include Martin Kuball, Michael J. Uren, P. Moens, Indranil Chatterjee, Abhishek Banerjee, Alexander Pooth, P. Vanmeerbeek, Manikant Singh, James W. Pomeroy and Stefano Dalcanale and has published in prestigious journals such as Journal of Physics D Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Serge Karboyan

23 papers receiving 662 citations

Peers

Serge Karboyan

CMP

EEE

EOMM

AMPO

Ting-Hsiang Hung United States

Jiacheng Lei Hong Kong

H. C. Chiu Taiwan

Yujin Hori Japan

Toshiharu Kubo Japan

V. Vijay India

Joseph J. Freedsman Japan

Quanbin Zhou China

Riad Kabouche France

Chihoko Mizue Japan

Ting-Hsiang Hung United States

Serge Karboyan

427 ×0.8

CMP

394 ×0.8

EEE

342 ×1.1

EOMM

170 ×0.9

74 ×0.7

AMPO

Citations per year, relative to Serge Karboyan Serge Karboyan (= 1×) peers Ting-Hsiang Hung

Countries citing papers authored by Serge Karboyan

Since Specialization

Citations

This map shows the geographic impact of Serge Karboyan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Serge Karboyan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Serge Karboyan more than expected).

Fields of papers citing papers by Serge Karboyan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Serge Karboyan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Serge Karboyan. The network helps show where Serge Karboyan may publish in the future.

Co-authorship network of co-authors of Serge Karboyan

This figure shows the co-authorship network connecting the top 25 collaborators of Serge Karboyan. A scholar is included among the top collaborators of Serge Karboyan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Serge Karboyan. Serge Karboyan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Uren, Michael J., et al.. (2021). Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation. Semiconductor Science and Technology. 36(9). 95024–95024. 8 indexed citations

Dalcanale, Stefano, et al.. (2020). The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 67(3). 869–874. 31 indexed citations

Moloney, Jerome V., Manikant Singh, Joseph W. Roberts, et al.. (2019). Atomic layer deposited α -Ga ₂ O ₃ solar-blind photodetectors. Journal of Physics D Applied Physics. 52(47). 475101–475101. 41 indexed citations

Singh, Manikant, Serge Karboyan, Michael J. Uren, et al.. (2019). Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers. Microelectronics Reliability. 95. 81–86. 6 indexed citations

Singh, Manikant, Michael J. Uren, Trevor Martin, et al.. (2018). “Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model. IEEE Transactions on Electron Devices. 65(9). 3746–3753. 42 indexed citations

Singh, Manikant, Michael J. Uren, James W. Pomeroy, et al.. (2018). Pulsed Large Signal RF Performance of Field-Plated Ga₂O₃ MOSFETs. IEEE Electron Device Letters. 39(10). 1572–1575. 58 indexed citations

Moens, P., Michael J. Uren, Abhishek Banerjee, et al.. (2017). Negative dynamic Ron in AlGaN/GaN power devices. Bristol Research (University of Bristol). 20 indexed citations

Uren, Michael J., Serge Karboyan, Indranil Chatterjee, et al.. (2017). “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(7). 2826–2834. 188 indexed citations

Karboyan, Serge, et al.. (2017). On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. Microelectronics Reliability. 81. 306–311. 25 indexed citations

10.

Donkers, J.J.T.M., J.A. Croon, Serge Karboyan, et al.. (2017). Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates. IEEE Transactions on Electron Devices. 64(3). 1197–1202. 25 indexed citations

11.

Chatterjee, Indranil, Michael J. Uren, Serge Karboyan, et al.. (2017). Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs. IEEE Transactions on Electron Devices. 64(3). 977–983. 34 indexed citations

12.

Karboyan, Serge, Michael J. Uren, James W. Pomeroy, et al.. (2016). Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs. Bristol Research (University of Bristol). 211–214. 4 indexed citations

13.

Chatterjee, Indranil, Michael J. Uren, Alexander Pooth, et al.. (2016). Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. Explore Bristol Research. 4A–4. 6 indexed citations

14.

Moens, P., Abhishek Banerjee, Michael J. Uren, et al.. (2015). Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs. Bristol Research (University of Bristol). 35.2.1–35.2.4. 71 indexed citations

15.

Karboyan, Serge, Michael J. Uren, Kean Boon Lee, et al.. (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 62(8). 2464–2469. 20 indexed citations

16.

Kuball, Martin, et al.. (2015). Floating body effects in carbon doped GaN HEMTs. Bristol Research (University of Bristol). 70–74. 3 indexed citations

17.

Uren, Michael J., Indranil Chatterjee, Serge Karboyan, et al.. (2015). Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias. Explore Bristol Research. 2 indexed citations

18.

Uren, Michael J., et al.. (2015). Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors. IEEE Electron Device Letters. 36(8). 826–828. 62 indexed citations

19.

Karboyan, Serge, et al.. (2013). Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: Impact of HTRB stress on short term and long term memory effects. 1–4. 7 indexed citations

20.

Karboyan, Serge, et al.. (2013). Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectronics Reliability. 53(9-11). 1491–1495. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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