St. Lenk

1.2k total citations
56 papers, 976 citations indexed

About

St. Lenk is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, St. Lenk has authored 56 papers receiving a total of 976 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in St. Lenk's work include Semiconductor materials and devices (34 papers), Semiconductor materials and interfaces (24 papers) and Silicon and Solar Cell Technologies (16 papers). St. Lenk is often cited by papers focused on Semiconductor materials and devices (34 papers), Semiconductor materials and interfaces (24 papers) and Silicon and Solar Cell Technologies (16 papers). St. Lenk collaborates with scholars based in Germany, France and Belgium. St. Lenk's co-authors include S. Mantl, Qing‐Tai Zhao, U. Breuer, J. Schubert, E. Rije, Joachim Knoch, Dan Buca, J. M. J. Lopes, M. Luysberg and B. Holländer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

St. Lenk

55 papers receiving 930 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
St. Lenk Germany 18 872 397 318 177 66 56 976
G. Vellianitis Belgium 22 1.1k 1.2× 253 0.6× 510 1.6× 153 0.9× 121 1.8× 53 1.2k
Mitsuo Sakashita Japan 18 1.0k 1.2× 372 0.9× 488 1.5× 219 1.2× 72 1.1× 122 1.1k
Julian P. Noad Canada 16 512 0.6× 272 0.7× 119 0.4× 138 0.8× 37 0.6× 66 627
Ch. Dieker Germany 15 699 0.8× 475 1.2× 427 1.3× 100 0.6× 87 1.3× 39 890
Michael A. Capano United States 14 499 0.6× 273 0.7× 483 1.5× 94 0.5× 70 1.1× 30 853
J.-F. Damlencourt France 16 1.0k 1.2× 198 0.5× 414 1.3× 198 1.1× 57 0.9× 33 1.1k
G. D. Lian United States 10 341 0.4× 258 0.6× 402 1.3× 117 0.7× 70 1.1× 19 596
V. V. Kirienko Russia 14 337 0.4× 291 0.7× 321 1.0× 159 0.9× 61 0.9× 62 543
R. Tsu United States 12 486 0.6× 255 0.6× 253 0.8× 76 0.4× 71 1.1× 18 586
Akira Ohsawa Japan 15 538 0.6× 240 0.6× 204 0.6× 87 0.5× 133 2.0× 41 716

Countries citing papers authored by St. Lenk

Since Specialization
Citations

This map shows the geographic impact of St. Lenk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by St. Lenk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites St. Lenk more than expected).

Fields of papers citing papers by St. Lenk

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by St. Lenk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by St. Lenk. The network helps show where St. Lenk may publish in the future.

Co-authorship network of co-authors of St. Lenk

This figure shows the co-authorship network connecting the top 25 collaborators of St. Lenk. A scholar is included among the top collaborators of St. Lenk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with St. Lenk. St. Lenk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Richter, S., S. А. Vitusevich, Sergii Pud, et al.. (2013). Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. 256–259. 3 indexed citations
2.
Nichau, A., Michael E. Schnee, J. M. J. Lopes, et al.. (2012). LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process. Solid-State Electronics. 71. 19–24. 4 indexed citations
3.
Lopes, J. M. J., A. Nichau, R. Lupták, et al.. (2011). Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 3 indexed citations
4.
Sandow, C., et al.. (2010). Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI. Solid-State Electronics. 54(2). 185–190. 16 indexed citations
5.
Mantl, S., J. M. J. Lopes, A. Nichau, et al.. (2010). Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process. IEEE Electron Device Letters. 32(1). 15–17. 29 indexed citations
6.
Lopes, J. M. J., M. Roeckerath, U. Littmark, et al.. (2009). Rare-earth based alternative gate dielectrics for future integration in MOSFETs. 153. 99–102. 4 indexed citations
7.
Lopes, J. M. J., M. Roeckerath, St. Lenk, et al.. (2008). SmScO 3 thin films as an alternative gate dielectric. Applied Physics Letters. 93(5). 19 indexed citations
8.
Roeckerath, M., J. M. J. Lopes, C. Sandow, et al.. (2008). Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon. Applied Physics A. 94(3). 521–524. 20 indexed citations
9.
Lopes, J. M. J., U. Littmark, M. Roeckerath, et al.. (2007). Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition. Journal of Applied Physics. 101(10). 26 indexed citations
10.
Mantl, S., Dan Buca, B. Holländer, et al.. (2006). From Thin Relaxed SiGe Buffer Layers to Strained Silicon Directly on Oxide. ECS Transactions. 3(7). 1047–1055. 5 indexed citations
11.
Zhao, Qing‐Tai, E. Rije, U. Breuer, St. Lenk, & S. Mantl. (2004). Tuning of silicide Schottky barrier heights by segregation of sulfur atoms. 456–459 vol.1. 11 indexed citations
12.
Luysberg, M., H. Trinkaus, B. Holländer, et al.. (2002). Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates. Journal of Applied Physics. 92(8). 4290–4295. 58 indexed citations
13.
Buca, Dan, Stephan Winnerl, St. Lenk, S. Mantl, & Ch. Buchal. (2002). Metal–germanium–metal ultrafast infrared detectors. Journal of Applied Physics. 92(12). 7599–7605. 23 indexed citations
14.
Winnerl, Stephan, Dan Buca, St. Lenk, et al.. (2002). Fast IR Si/SiGe superlattice MSM photodetectors with buried CoSi2 contacts. Microelectronic Engineering. 64(1-4). 205–209. 4 indexed citations
15.
Kluth, P., et al.. (2002). Diffusion and defect formation in ion implanted Si nanostructures. ANU Open Research (Australian National University). 71. 682–685. 1 indexed citations
16.
Zhao, Qing‐Tai, P. Kluth, Stephan Winnerl, St. Lenk, & S. Mantl. (2002). Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substrates. Microelectronic Engineering. 60(1-2). 183–190. 5 indexed citations
17.
Winnerl, Stephan, Dan Buca, St. Lenk, et al.. (2002). MBE grown Si/SiGe undulating layer superlattices for infrared light detection. Materials Science and Engineering B. 89(1-3). 73–76. 9 indexed citations
18.
Kluth, P., Qing‐Tai Zhao, Stephan Winnerl, St. Lenk, & S. Mantl. (2001). Fabrication of epitaxial CoSi2 nanowires. Applied Physics Letters. 79(6). 824–826. 14 indexed citations
19.
Friedrich, I., V. Weidenhof, St. Lenk, & Matthias Wuttig. (2001). Morphology and structure of laser-modified Ge2Sb2Te5 films studied by transmission electron microscopy. Thin Solid Films. 389(1-2). 239–244. 46 indexed citations
20.
Lenk, St., et al.. (2000). Molecular beam epitaxy of Ru2Si3 on silicon. Thin Solid Films. 371(1-2). 66–71. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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