J.R. Watling

1.2k total citations
70 papers, 972 citations indexed

About

J.R. Watling is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J.R. Watling has authored 70 papers receiving a total of 972 indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in J.R. Watling's work include Advancements in Semiconductor Devices and Circuit Design (62 papers), Semiconductor materials and devices (60 papers) and Silicon Carbide Semiconductor Technologies (21 papers). J.R. Watling is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (62 papers), Semiconductor materials and devices (60 papers) and Silicon Carbide Semiconductor Technologies (21 papers). J.R. Watling collaborates with scholars based in United Kingdom, Germany and Belgium. J.R. Watling's co-authors include A. R. Brown, Asen Asenov, A. Asenov, John R. Barker, Douglas J. Paul, Scott Roy, Craig Alexander, S. Roy, Craig Riddet and E. H. C. Parker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J.R. Watling

68 papers receiving 932 citations

Peers

Countries citing papers authored by J.R. Watling

Since Specialization

Citations

This map shows the geographic impact of J.R. Watling's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.R. Watling with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.R. Watling more than expected).

Fields of papers citing papers by J.R. Watling

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.R. Watling. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.R. Watling. The network helps show where J.R. Watling may publish in the future.

Co-authorship network of co-authors of J.R. Watling

This figure shows the co-authorship network connecting the top 25 collaborators of J.R. Watling. A scholar is included among the top collaborators of J.R. Watling based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.R. Watling. J.R. Watling is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates 2015 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·(unknown), Andrew R. Brown, J.R. Watling, Asen Asenov	1
2	Si/SiGe nanoscale engineered thermoelectric materials for energy harvesting 2012 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·Douglas J. Paul, Antonio Samarelli, L. Ferre Llin, J.R. Watling, (unknown), John Weaver, Phillip S. Dobson, Stefano Cecchi, Jacopo Frigerio, Fabio Isa, Daniel Chrastina, Giovanni Isella, (unknown), J. Stangl, E. Müller	1
3	Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width 2011 ·Ka‐Hou Chan, B. Benbakhti, Craig Riddet, J.R. Watling, A. Asenov	1
4	Simulation of hole-mobility in doped relaxed and strained Ge 2010 ·Microelectronic Engineering ·J.R. Watling, Craig Riddet, (unknown), A. Asenov	1
5	Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study 2010 ·IEEE Electron Device Letters ·A. R. Brown, (unknown), J.R. Watling, Asen Asenov	85
6	Simulation of hole-mobility in doped relaxed and strained Ge layers 2010 ·Journal of Applied Physics ·J.R. Watling, Craig Riddet, (unknown), A. Asenov	4
7	The influence of polarisation and image charges on electron- impurity scattering in high degeneracy, nanometre scale silicon wrap-round gate MOSFETs 2008 ·Journal of Physics Conference Series ·John R. Barker, (unknown), J.R. Watling	1
8	Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks 2006 ·Journal of Computational Electronics ·A. R. Brown, J.R. Watling, A. Asenov	21
9	SO phonon scattering rates at the Si-HfO₂interface in Si MOSFETs 2006 ·Journal of Physics Conference Series ·John R. Barker, J.R. Watling, Giulio Ferrari	2
10	The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs 2004 ·Solid-State Electronics ·J.R. Watling, Liqiu Yang, (unknown), (unknown), Asen Asenov, John R. Barker, S. Roy	25
11	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study 2004 ·Journal of Computational Electronics ·Craig Riddet, A. R. Brown, Craig Alexander, J.R. Watling, S. Roy, (unknown)	3
12	Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications 2004 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·Liqiu Yang, Asen Asenov, (unknown), J.R. Watling, John R. Barker, S. Roy, K. Elgaid, Iain Thayne, T. Hackbarth	4
13	Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs 2003 ·Journal of Computational Electronics ·L. X. Yang, J.R. Watling, (unknown), (unknown), A. Asenov, John R. Barker, S. Roy	2
14	The Use of Quantum Potentials for Confinement in Semiconductor Devices 2002 ·TechConnect Briefs ·Asen Asenov, Andrew R. Brown, J.R. Watling	4
15	Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces 2002 ·Journal of Computational Electronics ·J.R. Watling, John R. Barker, (unknown)	2
16	Excessive Over-Relaxation Method for Multigrid Poisson Solvers 2002 ·Journal of Computational Electronics ·C. Millar, A. Asenov, J.R. Watling	6
17	Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter 2002 ·IEEE Transactions on Nanotechnology ·A. R. Brown, A. Asenov, J.R. Watling	82
18	The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices 2002 ·Journal of Computational Electronics ·Asen Asenov, J.R. Watling, A. R. Brown, D. K. Ferry	37
19	Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs 2002 ·Materials Science and Engineering B ·(unknown), Michael J. Palmer, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker, T. E. Whall, A.M. Waite, A G R Evans, J.R. Watling, A. Asenov, John R. Barker	3
20	Indication of velocity overshoot in strained Si_0.8Ge_0.2p-channel MOSFETs 2000 ·Semiconductor Science and Technology ·Savaş Kaya, (unknown), J.R. Watling, A. Asenov, John R. Barker, (unknown), G. Braithwaite, T. E. Whall, E. H. C. Parker	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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