Erik Lind

3.6k total citations
162 papers, 2.9k citations indexed

About

Erik Lind is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Erik Lind has authored 162 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 154 papers in Electrical and Electronic Engineering, 78 papers in Biomedical Engineering and 48 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Erik Lind's work include Advancements in Semiconductor Devices and Circuit Design (117 papers), Semiconductor materials and devices (115 papers) and Nanowire Synthesis and Applications (76 papers). Erik Lind is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (117 papers), Semiconductor materials and devices (115 papers) and Nanowire Synthesis and Applications (76 papers). Erik Lind collaborates with scholars based in Sweden, United States and France. Erik Lind's co-authors include Lars‐Erik Wernersson, Johannes Svensson, Elvedin Memišević, Claes Thelander, Sofia Johansson, Lars Samuelson, Mattias Borg, Markus Hellenbrand, Anil W. Dey and Karl‐Magnus Persson and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

Erik Lind

158 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Erik Lind Sweden 32 2.7k 1.5k 679 508 88 162 2.9k
Kikuo Makita Japan 22 1.9k 0.7× 517 0.4× 889 1.3× 639 1.3× 51 0.6× 158 2.5k
Yasushi Shoji Japan 17 965 0.4× 306 0.2× 876 1.3× 720 1.4× 84 1.0× 74 1.3k
Ying Lu China 29 1.7k 0.6× 896 0.6× 349 0.5× 98 0.2× 56 0.6× 88 2.0k
Dhruv Saxena Australia 17 814 0.3× 931 0.6× 757 1.1× 352 0.7× 135 1.5× 39 1.3k
Val Zwiller Netherlands 22 1.3k 0.5× 1.0k 0.7× 1.3k 1.9× 1.0k 2.0× 142 1.6× 40 2.3k
Dirk König Australia 26 1.7k 0.6× 719 0.5× 910 1.3× 1.3k 2.6× 88 1.0× 92 2.2k
Kiejin Lee South Korea 22 956 0.4× 698 0.5× 355 0.5× 155 0.3× 188 2.1× 100 1.3k
Nima Dehdashti Akhavan Ireland 25 5.6k 2.1× 2.1k 1.4× 510 0.8× 327 0.6× 65 0.7× 94 5.7k
J. Kavalieros United States 27 3.3k 1.3× 973 0.7× 547 0.8× 688 1.4× 65 0.7× 41 3.6k
M. Martin France 20 964 0.4× 279 0.2× 618 0.9× 225 0.4× 39 0.4× 71 1.1k

Countries citing papers authored by Erik Lind

Since Specialization
Citations

This map shows the geographic impact of Erik Lind's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Erik Lind with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Erik Lind more than expected).

Fields of papers citing papers by Erik Lind

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Erik Lind. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Erik Lind. The network helps show where Erik Lind may publish in the future.

Co-authorship network of co-authors of Erik Lind

This figure shows the co-authorship network connecting the top 25 collaborators of Erik Lind. A scholar is included among the top collaborators of Erik Lind based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Erik Lind. Erik Lind is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lind, Erik, et al.. (2024). Gate-controlled near-surface Josephson junctions. Applied Physics Letters. 124(4). 1 indexed citations
2.
Svensson, Johannes, et al.. (2023). Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten. Nano Letters. 23(11). 4756–4761. 4 indexed citations
3.
Timm, Rainer, et al.. (2023). Low temperature atomic hydrogen annealing of InGaAs MOSFETs. Semiconductor Science and Technology. 38(5). 55001–55001.
4.
Borgström, Magnus T., et al.. (2023). Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing. SHILAP Revista de lepidopterología. 3(3). 34011–34011. 4 indexed citations
5.
D’Acunto, Giulio, et al.. (2022). Oxygen relocation during HfO2 ALD on InAs. Faraday Discussions. 236(0). 71–85. 9 indexed citations
6.
Borg, Mattias, et al.. (2021). Optimization of Near‐Surface Quantum Well Processing. physica status solidi (a). 218(7). 6 indexed citations
7.
Borg, Mattias, et al.. (2020). Mobility of near surface MOVPE grown InGaAs/InP quantum wells. Applied Physics Letters. 117(1). 7 indexed citations
8.
D’Acunto, Giulio, Esko Kokkonen, Sarah R. McKibbin, et al.. (2020). Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies. ACS Applied Electronic Materials. 2(12). 3915–3922. 26 indexed citations
9.
Borg, Mattias, et al.. (2020). III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications. Semiconductor Science and Technology. 35(6). 65015–65015. 3 indexed citations
10.
Zota, Cezar B., et al.. (2017). Gated Hall effect measurements on selectively grown InGaAs nanowires. Nanotechnology. 28(20). 205204–205204. 3 indexed citations
11.
Zota, Cezar B., Mattias Borg, Lars‐Erik Wernersson, & Erik Lind. (2017). Junctionless tri-gate InGaAs MOSFETs. Japanese Journal of Applied Physics. 56(12). 120306–120306. 4 indexed citations
12.
Hellenbrand, Markus, Elvedin Memišević, Johannes Svensson, Erik Lind, & Lars‐Erik Wernersson. (2017). Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade. Lund University Publications (Lund University). 16. 38–41. 2 indexed citations
13.
Memišević, Elvedin, et al.. (2016). Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 .MU.A/.MU.m for Ioff = 1 nA/.MU.m at Vds = 0.3 V. IEEE Conference Proceedings. 2016. 4. 9 indexed citations
14.
Zota, Cezar B., et al.. (2016). InGaAs nanowire MOSFETs with ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V. Lund University Publications (Lund University). 1–2. 7 indexed citations
15.
Lind, Erik, et al.. (2015). Ballistic modeling of InAs nanowire transistors. Solid-State Electronics. 115. 47–53. 3 indexed citations
16.
Wu, Jun, et al.. (2015). RF Characterization of Vertical Wrap-Gated InAs/High-$\kappa $ Nanowire Capacitors. IEEE Transactions on Electron Devices. 63(2). 584–589. 10 indexed citations
17.
Berg, Martin, Karl‐Magnus Persson, Jun Wu, et al.. (2014). InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers. Nanotechnology. 25(48). 485203–485203. 6 indexed citations
18.
Ghalamestani, Sepideh Gorji, Sofia Johansson, Mattias Borg, et al.. (2011). Uniform and position-controlled InAs nanowires on 2′′Si substrates for transistor applications. Nanotechnology. 23(1). 15302–15302. 32 indexed citations
19.
Nilsson, Henrik, Philippe Caroff, Erik Lind, Claes Thelander, & Lars‐Erik Wernersson. (2009). Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs. ANU Open Research (Australian National University). 4. 21–22. 2 indexed citations
20.
Wernersson, Lars‐Erik, et al.. (2004). Nanoelectronic pulse generators based on gated resonant tunnelling diodes: Research Articles. International Journal of Circuit Theory and Applications. 32(5). 431–437. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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