J. Schmidt

1.0k total citations
18 papers, 150 citations indexed

About

J. Schmidt is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Schmidt has authored 18 papers receiving a total of 150 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 5 papers in Condensed Matter Physics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Schmidt's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Radio Frequency Integrated Circuit Design (6 papers). J. Schmidt is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Radio Frequency Integrated Circuit Design (6 papers). J. Schmidt collaborates with scholars based in Germany, India and United States. J. Schmidt's co-authors include E. Richter, M. Weyers, Frank Brunner, G. Tränkle, U. Zeimer, Gerhard Pensl, R. Lossy, Joachim Würfl, A. Denker and H. Rücker and has published in prestigious journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, Solid-State Electronics and IEEE Transactions on Nuclear Science.

In The Last Decade

J. Schmidt

18 papers receiving 139 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Schmidt Germany	7	122	67	41	16	14	18	150
Liu Xinyu China	8	146 1.2×	88 1.3×	36 0.9×	20 1.3×	54 3.9×	50	183
Sheng Jiang United Kingdom	8	98 0.8×	119 1.8×	52 1.3×	28 1.8×	23 1.6×	13	132
Maurizio Moschetti Italy	5	92 0.8×	90 1.3×	25 0.6×	9 0.6×	34 2.4×	9	107
F.-W. Yao Taiwan	5	181 1.5×	179 2.7×	59 1.4×	21 1.3×	20 1.4×	8	211
H.C. Tuan Taiwan	8	264 2.2×	180 2.7×	59 1.4×	24 1.5×	24 1.7×	13	290
Kean Boon Lee United Kingdom	7	123 1.0×	128 1.9×	50 1.2×	21 1.3×	37 2.6×	17	153
Risheng Su Taiwan	3	166 1.4×	172 2.6×	57 1.4×	20 1.3×	20 1.4×	6	192
K. A. Jones United States	6	47 0.4×	43 0.6×	16 0.4×	26 1.6×	37 2.6×	14	75
Jialong Yu Taiwan	5	199 1.6×	198 3.0×	66 1.6×	26 1.6×	21 1.5×	11	231
Vineet Unni United Kingdom	7	95 0.8×	94 1.4×	39 1.0×	22 1.4×	18 1.3×	15	120

Countries citing papers authored by J. Schmidt

Since Specialization

Citations

This map shows the geographic impact of J. Schmidt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Schmidt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Schmidt more than expected).

Fields of papers citing papers by J. Schmidt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Schmidt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Schmidt. The network helps show where J. Schmidt may publish in the future.

Co-authorship network of co-authors of J. Schmidt

This figure shows the co-authorship network connecting the top 25 collaborators of J. Schmidt. A scholar is included among the top collaborators of J. Schmidt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Schmidt. J. Schmidt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Sorge, R., et al.. (2018). JICG MOS transistors for reduction of radiation effects in CMOS electronics. 17–19. 3 indexed citations

Sorge, R., et al.. (2018). Radiation tolerant RF-LDMOS transistors, integrated into a 0.25μm SiGe-BICMOS technology. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 924. 166–169. 2 indexed citations

Rücker, H., et al.. (2017). Operation of sige HBTs at cryogenic temperatures. 17–20. 12 indexed citations

Schmidt, J., et al.. (2017). Impact of Breakdown Voltage on Gamma Irradiation Effects in 0.13- $\mu \text{m}$ and 0.25- $\mu \text{m}$ SiGe HBTs. IEEE Transactions on Nuclear Science. 64(4). 1037–1041. 4 indexed citations

Wipf, Christian, R. Sorge, & J. Schmidt. (2016). Evaluation of LDMOS transistors for 10 Gbps switched mode applications and X-band power amplifier. 57–59. 2 indexed citations

Sorge, R., et al.. (2016). Junction isolated MOS/LDMOS cascode arrangement for radiation tolerant RF-power applications. 1–4. 2 indexed citations

Grossi, Alessandro, Eduardo Pérez, J. Schmidt, et al.. (2015). Radiation hard design of HfO2 based 1T1R cells and memory arrays. Institutional Research Information System University of Ferrara (University of Ferrara). 32. 1–2. 2 indexed citations

Lisker, Marco, A. Trusch, Andreas Krüger, et al.. (2014). (Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach. ECS Transactions. 64(6). 177–194. 10 indexed citations

Sorge, R., A. Fischer, Andreas Mai, et al.. (2011). Complementary RF LDMOS module for 12 V DC/DC converter and 6 GHz power applications. 57–60. 6 indexed citations

10.

Sorge, R., et al.. (2011). Integration of isolated RF-LDMOS transistors in a 0.25 µm SiGe:C BICMOS process. 162–165. 2 indexed citations

11.

Sorge, R., A. Fischer, Andreas Mai, et al.. (2010). Integrated Si-LDMOS transistors for 11 GHz X-Band power amplifier applications. 90–93. 1 indexed citations

12.

Richter, E., Frank Brunner, A. Denker, et al.. (2008). Irradiation effects on AlGaN HFET devices and GaN layers. Journal of Materials Science Materials in Electronics. 19(S1). 64–67. 1 indexed citations

13.

Richter, E., Frank Brunner, A. Denker, et al.. (2008). 2MeV ion irradiation effects on AlGaN/GaN HFET devices. Solid-State Electronics. 52(7). 1011–1017. 24 indexed citations

14.

Richter, E., Frank Brunner, A. Denker, et al.. (2007). High energy irradiation effects on AlGaN/GaN HFET devices. Semiconductor Science and Technology. 22(11). 1220–1224. 4 indexed citations

15.

Zeimer, U., M. Weyers, Joachim Würfl, et al.. (2006). Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices. IEEE Transactions on Nuclear Science. 53(6). 3661–3666. 41 indexed citations

16.

Richter, E., R. Lossy, J. Schmidt, et al.. (2006). High and low energy proton irradiation effects on AlGaN/GaN HFETs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2338–2341. 7 indexed citations

17.

Schmidt, J., et al.. (2004). One-chip solution in 0.35 μm standard CMOS for electronic ballasts for fluorescent lamps. 23–26. 4 indexed citations

18.

Voldman, Steven H., J. Schmidt, Rob Johnson, et al.. (2002). Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors. 239–250. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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