Duc V. Dinh

788 total citations
50 papers, 668 citations indexed

About

Duc V. Dinh is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Duc V. Dinh has authored 50 papers receiving a total of 668 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 23 papers in Electronic, Optical and Magnetic Materials and 19 papers in Mechanics of Materials. Recurrent topics in Duc V. Dinh's work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (23 papers) and Metal and Thin Film Mechanics (19 papers). Duc V. Dinh is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (23 papers) and Metal and Thin Film Mechanics (19 papers). Duc V. Dinh collaborates with scholars based in Germany, Ireland and Japan. Duc V. Dinh's co-authors include P. J. Parbrook, Markus Pristovsek, Hiroshi Amano, Michael Kneissl, Brian Corbett, Vitaly Z. Zubialevich, Yoshio Honda, Brendan Roycroft, O. Brandt and Jonas Lähnemann and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Duc V. Dinh

48 papers receiving 645 citations

Peers

Duc V. Dinh
Aditya Prabaswara Saudi Arabia
Melvin McLaurin United States
Yong-Tae Moon South Korea
Lindsay Hussey United States
A. Rice United States
Ryan Ley United States
Mohsen Nami United States
A. Reiher Germany
Duc V. Dinh
Citations per year, relative to Duc V. Dinh Duc V. Dinh (= 1×) peers Changda Zheng

Countries citing papers authored by Duc V. Dinh

Since Specialization
Citations

This map shows the geographic impact of Duc V. Dinh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Duc V. Dinh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Duc V. Dinh more than expected).

Fields of papers citing papers by Duc V. Dinh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Duc V. Dinh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Duc V. Dinh. The network helps show where Duc V. Dinh may publish in the future.

Co-authorship network of co-authors of Duc V. Dinh

This figure shows the co-authorship network connecting the top 25 collaborators of Duc V. Dinh. A scholar is included among the top collaborators of Duc V. Dinh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Duc V. Dinh. Duc V. Dinh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Dinh, Duc V., et al.. (2024). Generation of GHz surface acoustic waves in (Sc,Al)N thin films grown on free-standing polycrystalline diamond wafers by plasma-assisted molecular beam epitaxy. Journal of Physics D Applied Physics. 57(49). 495103–495103. 1 indexed citations
3.
Dinh, Duc V., Jonas Lähnemann, Lutz Geelhaar, & O. Brandt. (2023). Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 122(15). 32 indexed citations
4.
Winkler, Michael, R. Goldhahn, Tim Wernicke, et al.. (2020). Polarization fields in semipolar (202¯1¯) and (202¯1) InGaN light emitting diodes. Applied Physics Letters. 116(6).
5.
Kusch, Gunnar, Vitaly Z. Zubialevich, Duc V. Dinh, et al.. (2020). A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content. Journal of Physics D Applied Physics. 54(3). 35302–35302. 11 indexed citations
6.
Dinh, Duc V., et al.. (2020). Pulsed-flow growth of polar, semipolar and nonpolar AlGaN. Journal of Materials Chemistry C. 8(25). 8668–8675. 9 indexed citations
7.
Dinh, Duc V., et al.. (2019). Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers. Japanese Journal of Applied Physics. 58(SC). SC1044–SC1044. 5 indexed citations
8.
Dinh, Duc V., et al.. (2019). Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN. Semiconductor Science and Technology. 35(3). 35004–35004. 10 indexed citations
9.
Dinh, Duc V., et al.. (2019). Untwinned semipolar (1013) Al x Ga 1- x N layers grown on m-plane sapphire. Semiconductor Science and Technology. 34(12). 125012–125012. 5 indexed citations
10.
Dinh, Duc V., et al.. (2019). Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties. Scientific Reports. 9(1). 15802–15802. 14 indexed citations
11.
Dinh, Duc V., et al.. (2018). Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN. Journal of Physics D Applied Physics. 51(6). 06LT01–06LT01. 29 indexed citations
12.
Roycroft, Brendan, Mahbub Akhter, Duc V. Dinh, et al.. (2018). Size-Dependent Bandwidth of Semipolar ( $11\overline {2}2$ ) Light-Emitting-Diodes. IEEE Photonics Technology Letters. 30(5). 439–442. 37 indexed citations
13.
Dinh, Duc V., et al.. (2016). GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes. Optics Letters. 41(24). 5752–5752. 43 indexed citations
14.
Corbett, Brian, Duc V. Dinh, Grzegorz Kozłowski, et al.. (2016). Development of semipolar (11-22) LEDs on GaN templates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9768. 97681G–97681G. 11 indexed citations
15.
Dinh, Duc V., Mahbub Akhter, Grzegorz Kozłowski, et al.. (2015). Semipolar (112) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates. physica status solidi (a). 212(10). 2196–2200. 18 indexed citations
16.
Dinh, Duc V., Michele Conroy, Vitaly Z. Zubialevich, et al.. (2014). Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy. Journal of Crystal Growth. 414. 94–99. 25 indexed citations
17.
Zubialevich, Vitaly Z., et al.. (2014). Enhanced UV luminescence from InAlN quantum well structures using two temperature growth. Journal of Luminescence. 155. 108–111. 16 indexed citations
18.
Dinh, Duc V., et al.. (2013). Role of nitridation on polarity and growth of InN by metal–organic vapor phase epitaxy. Journal of Crystal Growth. 376. 17–22. 5 indexed citations
19.
Dinh, Duc V., Martin Frentrup, Markus Pristovsek, et al.. (2012). Growth and characterizations of semipolar (112¯2) InN. Journal of Applied Physics. 112(1). 24 indexed citations
20.
Dinh, Duc V., et al.. (2012). Comparison study of N‐ and In‐polar {0001} InN layers grown by MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 977–981. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026