Carsten Netzel

1.8k total citations
57 papers, 1.5k citations indexed

About

Carsten Netzel is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Carsten Netzel has authored 57 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Condensed Matter Physics, 34 papers in Electronic, Optical and Magnetic Materials and 26 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Carsten Netzel's work include GaN-based semiconductor devices and materials (55 papers), Ga2O3 and related materials (34 papers) and Semiconductor Quantum Structures and Devices (25 papers). Carsten Netzel is often cited by papers focused on GaN-based semiconductor devices and materials (55 papers), Ga2O3 and related materials (34 papers) and Semiconductor Quantum Structures and Devices (25 papers). Carsten Netzel collaborates with scholars based in Germany, Malaysia and United States. Carsten Netzel's co-authors include M. Weyers, U. Rossów, A. Hangleiter, D. Fuhrmann, P. Hinze, George Ade, F. Hitzel, Michael Kneissl, Tim Wernicke and A. Knauer and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Carsten Netzel

55 papers receiving 1.4k citations

Peers

Countries citing papers authored by Carsten Netzel

Since Specialization

Citations

This map shows the geographic impact of Carsten Netzel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Carsten Netzel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Carsten Netzel more than expected).

Fields of papers citing papers by Carsten Netzel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Carsten Netzel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Carsten Netzel. The network helps show where Carsten Netzel may publish in the future.

Co-authorship network of co-authors of Carsten Netzel

This figure shows the co-authorship network connecting the top 25 collaborators of Carsten Netzel. A scholar is included among the top collaborators of Carsten Netzel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Carsten Netzel. Carsten Netzel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Surface improvement of high temperature annealed Si-doped AlGaN layers 2025 ·Materials Science in Semiconductor Processing ·N. Zainal, Sylvia Hagedorn, (unknown), Tim Kolbe, Carsten Netzel, Anna Mogilatenko, M. Weyers	0
2	Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy 2024 ·Crystal Growth & Design ·(unknown), (unknown), (unknown), (unknown), Luca Persichetti, (unknown), Giovanni Capellini, Davide Spirito, M. Schmidbauer, Albert Kwasniewski, Carsten Netzel, Oliver Skibitzki, Fariba Hatami	3
3	Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates 2024 ·Applied Physics Letters ·Sylvia Hagedorn, Tim Kolbe, Gordon Schmidt, F. Bertram, Carsten Netzel, A. Knauer, Peter Veit, J. Christen, M. Weyers	6
4	High‐Temperature Annealing of Si‐Doped AlGaN 2024 ·physica status solidi (a) ·N. Zainal, Sylvia Hagedorn, Carsten Netzel, Tim Kolbe, M. Weyers	2
5	Role of Oxygen Incorporation in High Temperature Annealed AlGaN 2023 ·physica status solidi (a) ·N. Zainal, Sylvia Hagedorn, Carsten Netzel, Anna Mogilatenko, (unknown), M. Weyers	2
6	Advances towards deep-UV light emitting diode technologies 2021 ·Michael Kneissl, (unknown), Johannes Enslin, Martin Guttmann, Christian Kühn, Frank Mehnke, M. Schilling, Luca Sulmoni, Norman Susilo, Tim Wernicke, Hyung Koun Cho, Johannes Glaab, Jan Ruschel, Sylvia Hagedorn, Neysha Lobo‐Ploch, Carsten Netzel, (unknown), Sebastian Walde, (unknown), S. Einfeldt, M. Weyers	2
7	Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire 2020 ·Photonics Research ·Norman Susilo, (unknown), Sylvia Hagedorn, (unknown), Carsten Netzel, Neysha Lobo‐Ploch, (unknown), Jens Raß, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, M. Albrecht, M. Weyers, Michael Kneissl	62
8	Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes 2020 ·physica status solidi (a) ·Sylvia Hagedorn, Sebastian Walde, A. Knauer, Norman Susilo, (unknown), (unknown), Carsten Netzel, Anna Mogilatenko, C. Hartmann, Tim Wernicke, Michael Kneissl, M. Weyers	46
9	Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates 2020 ·Japanese Journal of Applied Physics ·Chia‐Yen Huang, Sebastian Walde, (unknown), Carsten Netzel, (unknown), Sylvia Hagedorn, Yuh‐Renn Wu, (unknown), M. Weyers	21
10	UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates 2015 ·IEEE Photonics Technology Letters ·(unknown), Martin Martens, A. Knauer, V. Kueller, U. Zeimer, Carsten Netzel, Christian Kühn, (unknown), Christoph Reich, Tim Wernicke, Michael Kneissl, M. Weyers	15
11	Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3 2014 ·Physical Review B ·Martin Feneberg, (unknown), Karsten Lange, Christian Lidig, B. Garke, R. Goldhahn, E. Richter, Carsten Netzel, M. Neumann, N. Esser, S. Fritze, H. De Witte, J. Bläsing, A. Dadgar, A. Krost	142
12	Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Frank Brunner, Eldad Bahat‐Treidel, (unknown), Carsten Netzel, Oliver Hilt, Joachim Würfl, M. Weyers	17
13	Well width study of InGaN multiple quantum wells for blue–green emitter 2010 ·Journal of Crystal Growth ·Veit Hoffmann, Carsten Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, J. Christen, M. Weyers, G. Tränkle, Michael Kneissl	10
14	HVPE growth of Al_xGa_1–xN alloy layers 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Sylvia Hagedorn, E. Richter, Carsten Netzel, U. Zeimer, M. Weyers, G. Tränkle	6
15	Semipolar GaN grown on m‐plane sapphire using MOVPE 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Tim Wernicke, Carsten Netzel, M. Weyers, Michael Kneissl	46
16	Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations 2007 ·Journal of Crystal Growth ·Carsten Netzel, Tim Wernicke, U. Zeimer, Frank Brunner, M. Weyers, Michael Kneissl	14
17	Emission and recombination characteristics ofGa1−xInxN∕GaNquantum well structures with nonradiative recombination suppression by V-shaped pits 2007 ·Physical Review B ·Carsten Netzel, H. Bremers, Lars Hoffmann, D. Fuhrmann, U. Rossów, A. Hangleiter	56
18	Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency 2005 ·Physical Review Letters ·A. Hangleiter, F. Hitzel, Carsten Netzel, D. Fuhrmann, U. Rossów, George Ade, P. Hinze	343
19	Radiative and Nonradiative Recombination Times in Optically Excited GaInN/GaN Quantum Wells 2002 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Carsten Netzel, (unknown), (unknown), U. Rossów, A. Hangleiter	7
20	Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells 2001 ·MRS Proceedings ·A. Hangleiter, (unknown), Carsten Netzel, U. Rossów, Paul R. C. Kent, Alex Zunger	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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