Haruo Sunakawa

2.7k total citations · 1 hit paper
36 papers, 2.3k citations indexed

About

Haruo Sunakawa is a scholar working on Condensed Matter Physics, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Haruo Sunakawa has authored 36 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 16 papers in Materials Chemistry and 15 papers in Mechanics of Materials. Recurrent topics in Haruo Sunakawa's work include GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (15 papers) and Metal and Thin Film Mechanics (14 papers). Haruo Sunakawa is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (15 papers) and Metal and Thin Film Mechanics (14 papers). Haruo Sunakawa collaborates with scholars based in Japan and United States. Haruo Sunakawa's co-authors include Akira Usui, Akira Sakai, Atsushi Yamaguchi, A. Usui, Kenji Kobayashi, Takeshi Eri, Yuichi Oshima, Akitaka Kimura, Toshinari Ichihashi and Masatomo Shibata and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Haruo Sunakawa

36 papers receiving 2.2k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

1997 773 citations Akira Usui, Haruo Sunakawa et al. Japanese Journal of Applied Physics profile →

Peers

Countries citing papers authored by Haruo Sunakawa

Since Specialization

Citations

This map shows the geographic impact of Haruo Sunakawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Haruo Sunakawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Haruo Sunakawa more than expected).

Fields of papers citing papers by Haruo Sunakawa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Haruo Sunakawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Haruo Sunakawa. The network helps show where Haruo Sunakawa may publish in the future.

Co-authorship network of co-authors of Haruo Sunakawa

This figure shows the co-authorship network connecting the top 25 collaborators of Haruo Sunakawa. A scholar is included among the top collaborators of Haruo Sunakawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Haruo Sunakawa. Haruo Sunakawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Fabrication of Low Dislocation Density GaN Template by Nano-channel FIELO Using Nanoimprint Lithography 2013 ·Journal of Photopolymer Science and Technology ·(unknown), Shuichi Shoji, (unknown), Hiroshi Goto, Haruo Sunakawa, (unknown), Akira Usui, Atsushi Yamaguchi, Jun Mizuno	5
2	GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography 2013 ·Japanese Journal of Applied Physics ·Akira Usui, (unknown), Hiroki Goto, Haruo Sunakawa, (unknown), (unknown), (unknown), Shuichi Shoji, Atsushi Yamaguchi, (unknown), (unknown), Hiroshi Goto, Jun Mizuno	9
3	Depth profile of residual strain in free‐standing GaN substrates measured by cross‐sectional micro‐reflectance spectroscopy 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Atsushi Yamaguchi, Huiyuan Geng, Haruo Sunakawa, (unknown), (unknown), Akira Usui	2
4	Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate 2009 ·Journal of Crystal Growth ·Hitoshi Sasaki, Haruo Sunakawa, (unknown), (unknown), Akira Usui	11
5	Publisher’s Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B69, 045207 (2004)] 2004 ·Physical Review B ·K. H. Chow, L. S. Vlasenko, P. Johannesen, Cornel Bozdog, G. D. Watkins, A. Usui, Haruo Sunakawa, Chiaki Sasaoka, M. Mizuta	4
6	Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance 2004 ·Physical Review B ·P. Johannesen, A. Żakrzewski, L. S. Vlasenko, G. D. Watkins, A. Usui, Haruo Sunakawa, M. Mizuta	13
7	Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation 2003 ·Japanese Journal of Applied Physics ·Yuichi Oshima, Takeshi Eri, Masatomo Shibata, Haruo Sunakawa, Kenji Kobayashi, Toshinari Ichihashi, A. Usui	232
8	Intrinsic defects in GaN: what we are learning from magnetic resonance studies 2003 ·Physica B Condensed Matter ·G. D. Watkins, K. H. Chow, P. Johannesen, L. S. Vlasenko, Cornel Bozdog, A. Żakrzewski, M. Mizuta, Haruo Sunakawa, Naotaka Kuroda, A. Usui	5
9	Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy 2002 ·Physical review. B, Condensed matter ·Cornel Bozdog, G. D. Watkins, Haruo Sunakawa, Naotaka Kuroda, Akira Usui	9
10	Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation 2002 ·physica status solidi (a) ·A. Usui, (unknown), K. Kobayashi, Haruo Sunakawa, Yuichi Oshima, Takeshi Eri, (unknown)	33
11	High-speed ablation etching of GaN semiconductor using femtosecond laser 2001 ·Optics Communications ·(unknown), Minoru Obara, Akira Usui, Haruo Sunakawa	39
12	Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth 2000 ·Applied Physics Letters ·Heiji Watanabe, Naotaka Kuroda, Haruo Sunakawa, Akira Usui	4
13	Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth 1998 ·Applied Physics Letters ·Akira Sakai, Haruo Sunakawa, Akira Usui	184
14	High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy 1998 ·Journal of Crystal Growth ·Chiaki Sasaoka, Haruo Sunakawa, A. Kimura, M. Nido, Akira Usui, Akira Sakai	71
15	Microstructure of GaN films on GaAs(1 0 0) substrates grown by hydride vapor-phase epitaxy 1998 ·Journal of Crystal Growth ·Akira Sakai, Akitaka Kimura, Haruo Sunakawa, Akira Usui	4
16	Defect structure in selectively grown GaN films with low threading dislocation density 1997 ·Applied Physics Letters ·Akira Sakai, Haruo Sunakawa, Akira Usui	336
17	Growth of InN by Chloride-Transport Vapor Phase Epitaxy 1996 ·Japanese Journal of Applied Physics ·Haruo Sunakawa, Atsushi Yamaguchi, Akitaka Kimura, Akira Usui	12
18	Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy 1996 ·Japanese Journal of Applied Physics ·Akitaka Kimura, Atsushi Yamaguchi, Akira Sakai, Haruo Sunakawa, M. Nido, Akira Usui	7
19	Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy 1996 ·Japanese Journal of Applied Physics ·Atsushi Yamaguchi, Takashi Manako, Akira Sakai, Haruo Sunakawa, Akitaka Kimura, M. Nido, Akira Usui	17
20	Extremely uniform growth of GaAs and GaAlAs by low pressure metalorganic chemical vapor deposition on three-inch GaAs substrates 1984 ·Journal of Crystal Growth ·Atsuto Okamoto, Haruo Sunakawa, H. Terao, Hiroyuki Watanabe	15

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