K. Baskar

469 total citations
29 papers, 298 citations indexed

About

K. Baskar is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, K. Baskar has authored 29 papers receiving a total of 298 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 17 papers in Electronic, Optical and Magnetic Materials and 14 papers in Materials Chemistry. Recurrent topics in K. Baskar's work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (10 papers). K. Baskar is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (10 papers). K. Baskar collaborates with scholars based in India, Finland and Japan. K. Baskar's co-authors include Takashi Egawa, S. Arulkumaran, R. Ramesh, Hiroyasu Ishikawa, Puspamitra Panigrahi, G. Saravanan, S Sangeetha, Yuichi Sano, R. Dhanasekaran and D. Arivuoli and has published in prestigious journals such as Scientific Reports, International Journal of Hydrogen Energy and Applied Surface Science.

In The Last Decade

K. Baskar

27 papers receiving 287 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Baskar India 11 145 144 139 114 48 29 298
Huang-Yu Lin Taiwan 6 137 0.9× 207 1.4× 238 1.7× 39 0.3× 10 0.2× 10 362
Xianda Zhou China 9 62 0.4× 253 1.8× 262 1.9× 265 2.3× 118 2.5× 42 478
Abdelkader Abderrahmane South Korea 11 39 0.3× 378 2.6× 309 2.2× 60 0.5× 32 0.7× 42 489
Juin J. Liou United States 10 74 0.5× 49 0.3× 518 3.7× 30 0.3× 16 0.3× 35 568
Shaoliang Wang China 10 17 0.1× 149 1.0× 121 0.9× 65 0.6× 14 0.3× 36 241
Daifeng Zou China 8 32 0.2× 349 2.4× 175 1.3× 143 1.3× 4 0.1× 16 388
Hao Feng Hong Kong 10 34 0.2× 49 0.3× 282 2.0× 49 0.4× 23 0.5× 38 332
Nilanthy Balakrishnan United Kingdom 9 27 0.2× 438 3.0× 371 2.7× 44 0.4× 17 0.4× 20 504
Ajay Tiwari Taiwan 11 94 0.6× 96 0.7× 123 0.9× 146 1.3× 4 0.1× 36 317

Countries citing papers authored by K. Baskar

Since Specialization
Citations

This map shows the geographic impact of K. Baskar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Baskar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Baskar more than expected).

Fields of papers citing papers by K. Baskar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Baskar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Baskar. The network helps show where K. Baskar may publish in the future.

Co-authorship network of co-authors of K. Baskar

This figure shows the co-authorship network connecting the top 25 collaborators of K. Baskar. A scholar is included among the top collaborators of K. Baskar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Baskar. K. Baskar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lu, Yongfeng, et al.. (2023). Fabrication of composition-controlled MOCVD grown InxGa1-xN based MSM photodetectors. Optical Materials. 136. 113462–113462. 11 indexed citations
2.
3.
Baskar, K., et al.. (2022). Retraction Notice: Handwritten Digits Recognition from Images using Serendipity and Orthogonal Schemes. 2022 2nd International Conference on Advance Computing and Innovative Technologies in Engineering (ICACITE). 1–1.
4.
Ramesh, R., et al.. (2021). Enhancement of visible light photodetector performance for ultrafast switching using flower shaped gallium nitride nanostructures. Scripta Materialia. 194. 113711–113711. 15 indexed citations
5.
Baskar, K., et al.. (2021). Privacy-Preserving Cost-Optimization for Dynamic Replication in Cloud Data Centers. 927–932. 9 indexed citations
6.
Ramesh, R., et al.. (2020). Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors. Scientific Reports. 10(1). 14507–14507. 26 indexed citations
7.
Asokan, K., et al.. (2019). Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures. Journal of Physics D Applied Physics. 52(43). 435303–435303.
8.
Baskar, K., et al.. (2019). Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition. ACS Omega. 4(12). 14772–14779. 19 indexed citations
9.
Baskar, K., et al.. (2018). Effect of TMAl flow rate on AlInGaN/GaN heterostructures grown by MOCVD. Optik. 178. 66–73. 2 indexed citations
10.
Balaji, M. & K. Baskar. (2015). Silicon Ion Irradiation Effects on AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapour Deposition. IETE Technical Review. 33(1). 50–53. 2 indexed citations
11.
Ramesh, R., et al.. (2013). Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV Region. Journal of Electronic Materials. 42(8). 2486–2491. 4 indexed citations
12.
Baskar, K., et al.. (2012). Irradiation induced nanotrack and property modification in Zn3P2. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(7). 1636–1639. 1 indexed citations
13.
Sundaram, Suresh, et al.. (2010). Structural and magnetic properties of pure and cobalt doped Gallium Nitride nanocrystals. MRS Proceedings. 1257. 2 indexed citations
14.
Richter, E., Frank Brunner, A. Denker, et al.. (2008). Irradiation effects on AlGaN HFET devices and GaN layers. Journal of Materials Science Materials in Electronics. 19(S1). 64–67. 1 indexed citations
15.
Abhaya, S., et al.. (2006). Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study. Physica B Condensed Matter. 376-377. 507–511. 4 indexed citations
16.
Arulkumaran, S., et al.. (2005). Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors. physica status solidi (a). 202(2). 49 indexed citations
17.
18.
19.
Baskar, K., et al.. (2004). Growth and characterization of selenium sulfide (SeS) and selenium tin sulfide (SeSnS2) microcrystals. Journal of Crystal Growth. 263(1-4). 498–503. 6 indexed citations
20.
Baskar, K., et al.. (2004). Optical Properties of High Energy Tin (Sn5+) Ion Irradiated Metal-Organic Chemical Vapor Deposition Grown GaN on Sapphire. Japanese Journal of Applied Physics. 43(7R). 4150–4150. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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