Sylvia Hagedorn

1.9k total citations
62 papers, 1.0k citations indexed

About

Sylvia Hagedorn is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Sylvia Hagedorn has authored 62 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Condensed Matter Physics, 35 papers in Electronic, Optical and Magnetic Materials and 22 papers in Electrical and Electronic Engineering. Recurrent topics in Sylvia Hagedorn's work include GaN-based semiconductor devices and materials (59 papers), Ga2O3 and related materials (35 papers) and ZnO doping and properties (21 papers). Sylvia Hagedorn is often cited by papers focused on GaN-based semiconductor devices and materials (59 papers), Ga2O3 and related materials (35 papers) and ZnO doping and properties (21 papers). Sylvia Hagedorn collaborates with scholars based in Germany, Taiwan and Malaysia. Sylvia Hagedorn's co-authors include M. Weyers, Sebastian Walde, Michael Kneissl, Tim Wernicke, Anna Mogilatenko, A. Knauer, U. Zeimer, Norman Susilo, Martin Guttmann and E. Richter and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

Sylvia Hagedorn

59 papers receiving 977 citations

Peers

Sylvia Hagedorn

CMP

EOMM

EEE

Kenji Tsubaki Japan

T. Paskova United States

Luca Sulmoni Germany

Ryan G. Banal Japan

Martin Frentrup United Kingdom

Hwa-Mok Kim South Korea

Junxue Ran China

Kangkai Tian China

Cyril Pernot Japan

Lindsay Hussey United States

Kenji Tsubaki Japan

Sylvia Hagedorn

1.1k ×1.1

CMP

767 ×1.3

EOMM

516 ×1.1

447 ×1.2

225 ×1.1

EEE

Citations per year, relative to Sylvia Hagedorn Sylvia Hagedorn (= 1×) peers Kenji Tsubaki

Countries citing papers authored by Sylvia Hagedorn

Since Specialization

Citations

This map shows the geographic impact of Sylvia Hagedorn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sylvia Hagedorn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sylvia Hagedorn more than expected).

Fields of papers citing papers by Sylvia Hagedorn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sylvia Hagedorn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sylvia Hagedorn. The network helps show where Sylvia Hagedorn may publish in the future.

Co-authorship network of co-authors of Sylvia Hagedorn

This figure shows the co-authorship network connecting the top 25 collaborators of Sylvia Hagedorn. A scholar is included among the top collaborators of Sylvia Hagedorn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sylvia Hagedorn. Sylvia Hagedorn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zainal, N., Sylvia Hagedorn, Tim Kolbe, et al.. (2025). Surface improvement of high temperature annealed Si-doped AlGaN layers. Materials Science in Semiconductor Processing. 200. 109949–109949.

Kolbe, Tim, Martin Guttmann, Sylvia Hagedorn, et al.. (2025). Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p ‐AlGaN‐Layers. physica status solidi (RRL) - Rapid Research Letters. 19(12).

Pregnolato, Tommaso, et al.. (2025). AlGaN/AlN heterostructures: an emerging platform for integrated photonics. PubMed. 2(1). 2–2. 2 indexed citations

Kolbe, Tim, Hyun Kyong Cho, Sylvia Hagedorn, et al.. (2024). 226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW. physica status solidi (RRL) - Rapid Research Letters. 18(11). 4 indexed citations

Winkelmann, Aimo, B. Hourahine, Feng Peng, et al.. (2023). Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction. Microscopy and Microanalysis. 29(6). 1879–1888. 2 indexed citations

Knauer, A., Tim Kolbe, Sylvia Hagedorn, et al.. (2023). Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates. Applied Physics Letters. 122(1). 23 indexed citations

Mangelinck, D., Sylvia Hagedorn, H. Bracht, et al.. (2023). Silicon diffusion in AlN. Journal of Applied Physics. 134(9). 2 indexed citations

Kolbe, Tim, A. Knauer, Jens Raß, et al.. (2023). 234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer. Applied Physics Letters. 122(19). 24 indexed citations

Guttmann, Martin, Neysha Lobo‐Ploch, F. Gindele, et al.. (2022). Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin. Semiconductor Science and Technology. 37(6). 65019–65019. 3 indexed citations

10.

Hagedorn, Sylvia, et al.. (2022). Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing. Journal of Applied Physics. 131(21). 6 indexed citations

11.

Guttmann, Martin, Norman Susilo, Luca Sulmoni, et al.. (2022). Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities. physica status solidi (a). 220(16). 14 indexed citations

12.

Markurt, T., Tobias Schulz, M. Albrecht, et al.. (2021). Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing. Journal of Applied Physics. 130(20). 17 indexed citations

13.

Ruschel, Jan, Johannes Glaab, Norman Susilo, et al.. (2020). Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities. Applied Physics Letters. 117(24). 42 indexed citations

14.

Susilo, Norman, Sylvia Hagedorn, Carsten Netzel, et al.. (2020). Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire. Photonics Research. 8(4). 589–589. 62 indexed citations

15.

Brunner, Frank, et al.. (2020). High-temperature annealing of AlN films grown on 4H–SiC. AIP Advances. 10(12). 9 indexed citations

16.

Hagedorn, Sylvia, et al.. (2020). Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy. Semiconductor Science and Technology. 35(3). 35028–35028. 1 indexed citations

17.

Hagedorn, Sylvia, Sebastian Walde, A. Knauer, et al.. (2020). Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes. physica status solidi (a). 217(14). 46 indexed citations

18.

Brendel, Moritz, et al.. (2019). Degradation of AlGaN-based metal-semiconductor-metal photodetectors. Japanese Journal of Applied Physics. 58(SC). SCCC21–SCCC21. 12 indexed citations

19.

Susilo, Norman, Sylvia Hagedorn, Dominik Jaeger, et al.. (2018). AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire. Applied Physics Letters. 112(4). 177 indexed citations

20.

Knauer, A., Anna Mogilatenko, Sylvia Hagedorn, et al.. (2016). Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN. physica status solidi (b). 253(5). 809–813. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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