C. J. Humphreys

31.5k total citations · 1 hit paper
586 papers, 25.9k citations indexed

About

C. J. Humphreys is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. J. Humphreys has authored 586 papers receiving a total of 25.9k indexed citations (citations by other indexed papers that have themselves been cited), including 382 papers in Condensed Matter Physics, 281 papers in Electrical and Electronic Engineering and 188 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. J. Humphreys's work include GaN-based semiconductor devices and materials (350 papers), Semiconductor materials and devices (198 papers) and Metal and Thin Film Mechanics (132 papers). C. J. Humphreys is often cited by papers focused on GaN-based semiconductor devices and materials (350 papers), Semiconductor materials and devices (198 papers) and Metal and Thin Film Mechanics (132 papers). C. J. Humphreys collaborates with scholars based in United Kingdom, United States and Germany. C. J. Humphreys's co-authors include Gianluigi A. Botton, S. L. Dudarev, Adrian P. Sutton, Sergey Y. Savrasov, Menno J. Kappers, Rachel A. Oliver, M. A. Moram, Dandan Zhu, P. Dawson and J. S. Barnard and has published in prestigious journals such as Nature, Physical Review Letters and Advanced Materials.

In The Last Decade

C. J. Humphreys

573 papers receiving 25.2k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study

1998 12.0k citations C. J. Humphreys et al. profile →

Peers

Countries citing papers authored by C. J. Humphreys

Since Specialization

Citations

This map shows the geographic impact of C. J. Humphreys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Humphreys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Humphreys more than expected).

Fields of papers citing papers by C. J. Humphreys

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Humphreys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Humphreys. The network helps show where C. J. Humphreys may publish in the future.

Co-authorship network of co-authors of C. J. Humphreys

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Humphreys. A scholar is included among the top collaborators of C. J. Humphreys based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Humphreys. C. J. Humphreys is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Optical and structural properties of dislocations in InGaN 2019 ·Journal of Applied Physics ·Fabien Massabuau, Matthew K. Horton, (unknown), Simon Hammersley, Peiyu Chen, Marcin Zieliński, (unknown), Giorgio Divitini, P. R. Edwards, Menno J. Kappers, C. McAleese, M. A. Moram, C. J. Humphreys, P. Dawson, Rachel A. Oliver	10
2	Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates 2019 ·Journal of Applied Physics ·Fengzai Tang, Tongtong Zhu, Wai Yuen Fu, Fabrice Oehler, Siyuan Zhang, James T. Griffiths, C. J. Humphreys, T. Martin, Paul A.J. Bagot, Michael P. Moody, (unknown), Stefan Schulz, P. Dawson, (unknown), Janet Jacobs, Rachel A. Oliver	6
3	Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs 2018 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), Ivor Guiney, (unknown), Sheng Jiang, (unknown), Penglei Li, D. J. Wallis, C. J. Humphreys, Paul R. Chalker, P.A. Houston	7
4	What is red? On the chromaticity of orange-red InGaN/GaN based LEDs 2018 ·Journal of Applied Physics ·Yoann Robin, Markus Pristovsek, Hiroshi Amano, Fabrice Oehler, Rachel A. Oliver, C. J. Humphreys	32
5	Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model 2018 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), Sandeep Kumar, (unknown), Ivor Guiney, C. J. Humphreys, Srinivasan Raghavan, R. Muralidharan, Digbijoy N. Nath	16
6	Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors 2018 ·Journal of Applied Physics ·Fengzai Tang, (unknown), Ivor Guiney, Martin Frentrup, J. S. Barnard, Giorgio Divitini, (unknown), T. Martin, Paul A.J. Bagot, Michael P. Moody, C. J. Humphreys, P.A. Houston, Rachel A. Oliver, D. J. Wallis	3
7	Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer 2017 ·IEEE Transactions on Electron Devices ·Sandeep Kumar, Priti Gupta, Ivor Guiney, C. J. Humphreys, Srinivasan Raghavan, R. Muralidharan, Digbijoy N. Nath	29
8	Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001) 2017 ·Journal of Applied Physics ·Jy Kim, Adrian Ionescu, Rhodri Mansell, I. Farrer, Fabrice Oehler, C. J. Kinane, Joshaniel F. K. Cooper, Nina‐Juliane Steinke, S. Langridge, (unknown), C. J. Humphreys, R. P. Cowburn, S. N. Holmes, C. H. W. Barnes	7
9	Comparative study of (0001) and InGaN based light emitting diodes 2016 ·Japanese Journal of Applied Physics ·Markus Pristovsek, C. J. Humphreys, Sebastian Bauer, (unknown), K. Thonke, Grzegorz Kozłowski, (unknown), Pleun Maaskant, Brian Corbett	9
10	Dataset for Investigation of InGaN facet-dependent non-polar growth rates and composition for core-shell LEDs 2016 ·Pure (University of Bath) ·(unknown), Emmanuel Le Boulbar, Pierre‐Marie Coulon, S.‐L. Sahonta, D.W.E. Allsopp, C. J. Humphreys, Philip A. Shields	1
11	Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC 2016 ·ORCA Online Research @Cardiff (Cardiff University) ·(unknown), (unknown), (unknown), (unknown), D. J. Wallis, Ivor Guiney, C. J. Humphreys, K. Elgaid	1
12	Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods 2016 ·Bristol Research (University of Bristol) ·Emmanuel Le Boulbar, Shahrzad Hosseini Vajargah, P. R. Edwards, Ian Griffiths, (unknown), Pierre‐Marie Coulon, D. Cherns, Robert Martin, C. J. Humphreys, Chris Bowen, D.W.E. Allsopp, Philip A. Shields	1
13	Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold 2016 ·Journal of Applied Physics ·James T. Griffiths, Siyuan Zhang, (unknown), Dandan Zhu, Wai Yuen Fu, (unknown), Ian W. Boyd, (unknown), D. J. Wallis, C. J. Humphreys, Rachel A. Oliver	11
14	The microstructure of non-polar a-plane (112¯0) InGaN quantum wells 2016 ·Journal of Applied Physics ·James T. Griffiths, Fabrice Oehler, Fengzai Tang, Siyuan Zhang, Wai Yuen Fu, Tongtong Zhu, Scott D. Findlay, (unknown), Joanne Etheridge, T. Martin, Paul A.J. Bagot, Michael P. Moody, (unknown), P. Dawson, Menno J. Kappers, C. J. Humphreys, Rachel A. Oliver	20
15	Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence 2016 ·Applied Physics Letters ·Tongtong Zhu, David Gachet, Fengzai Tang, Wai Yuen Fu, Fabrice Oehler, Menno J. Kappers, P. Dawson, C. J. Humphreys, Rachel A. Oliver	9
16	Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes 2015 ·Journal of Applied Physics ·Manolis Wallace, P. R. Edwards, Menno J. Kappers, M. A. Hopkins, Fabrice Oehler, (unknown), Rachel A. Oliver, C. J. Humphreys, D.W.E. Allsopp, Robert Martin	8
17	A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures 2014 ·physica status solidi (b) ·Matthew Davies, P. Dawson, Fabien Massabuau, (unknown), Rachel A. Oliver, Menno J. Kappers, C. J. Humphreys	18
18	Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method 2014 ·APL Materials ·James T. Griffiths, Tongtong Zhu, Fabrice Oehler, (unknown), Wai Yuen Fu, (unknown), Robert A. Taylor, M. J. Kappers, C. J. Humphreys, Rachel A. Oliver	16
19	Evaluation of growth methods for the heteroepitaxy of non-polar(112¯0)GAN on sapphire by MOVPE 2014 ·Journal of Crystal Growth ·Fabrice Oehler, Duncan S. Sutherland, Tongtong Zhu, (unknown), T. J. Badcock, M. J. Kappers, C. J. Humphreys, P. Dawson, Rachel A. Oliver	11
20	Structure and strain relaxation effects of defects in InxGa1−xN epilayers 2014 ·Journal of Applied Physics ·(unknown), Wai Yuen Fu, M. A. Moram, Fabien Massabuau, Menno J. Kappers, C. McAleese, Fabrice Oehler, C. J. Humphreys, Rajiv O. Dusane, S.‐L. Sahonta	45

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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