Serguei Chevtchenko

1.0k total citations
72 papers, 810 citations indexed

About

Serguei Chevtchenko is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Serguei Chevtchenko has authored 72 papers receiving a total of 810 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 54 papers in Condensed Matter Physics and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Serguei Chevtchenko's work include GaN-based semiconductor devices and materials (54 papers), Radio Frequency Integrated Circuit Design (30 papers) and Semiconductor materials and devices (15 papers). Serguei Chevtchenko is often cited by papers focused on GaN-based semiconductor devices and materials (54 papers), Radio Frequency Integrated Circuit Design (30 papers) and Semiconductor materials and devices (15 papers). Serguei Chevtchenko collaborates with scholars based in Germany, United States and Lithuania. Serguei Chevtchenko's co-authors include H. Morkoç̌, W. Heinrich, A. A. Baski, X. Ni, Hartmut G. Roskos, Ümit Özgür, Alvydas Lisauskas, Viktor Krozer, Matthias Rudolph and Maris Bauer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Serguei Chevtchenko

67 papers receiving 782 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Serguei Chevtchenko Germany 15 568 414 269 199 191 72 810
Miguel Montes Bajo Spain 18 600 1.1× 245 0.6× 238 0.9× 96 0.5× 305 1.6× 63 787
J.C. de Jaeger France 13 424 0.7× 437 1.1× 176 0.7× 203 1.0× 143 0.7× 39 630
B. A. Danilchenko Ukraine 14 378 0.7× 348 0.8× 431 1.6× 114 0.6× 184 1.0× 62 750
N. N. Iosad Netherlands 14 428 0.8× 154 0.4× 93 0.3× 46 0.2× 106 0.6× 26 579
A. Piotrowska Poland 16 436 0.8× 130 0.3× 199 0.7× 60 0.3× 380 2.0× 83 661
Y. S. Gou Taiwan 15 180 0.3× 374 0.9× 276 1.0× 257 1.3× 155 0.8× 94 637
K. Gołaszewska Poland 14 429 0.8× 67 0.2× 198 0.7× 65 0.3× 171 0.9× 71 552
Pashupati Dhakal United States 12 192 0.3× 108 0.3× 138 0.5× 61 0.3× 91 0.5× 53 480
Hongen Shen United States 11 339 0.6× 387 0.9× 199 0.7× 214 1.1× 335 1.8× 47 650
A. V. Andrianov Russia 15 521 0.9× 215 0.5× 231 0.9× 110 0.6× 374 2.0× 107 700

Countries citing papers authored by Serguei Chevtchenko

Since Specialization
Citations

This map shows the geographic impact of Serguei Chevtchenko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Serguei Chevtchenko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Serguei Chevtchenko more than expected).

Fields of papers citing papers by Serguei Chevtchenko

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Serguei Chevtchenko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Serguei Chevtchenko. The network helps show where Serguei Chevtchenko may publish in the future.

Co-authorship network of co-authors of Serguei Chevtchenko

This figure shows the co-authorship network connecting the top 25 collaborators of Serguei Chevtchenko. A scholar is included among the top collaborators of Serguei Chevtchenko based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Serguei Chevtchenko. Serguei Chevtchenko is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wentzel, Andreas, et al.. (2025). Digital GaN-based transceiver architectures for sustainable 5G networks. International Journal of Microwave and Wireless Technologies. 17(9). 1581–1589.
2.
Wentzel, Andreas, et al.. (2024). Digital GaN-based Transceiver Module for Future Green 5G Networks. 136–139. 1 indexed citations
3.
4.
Desai, Arpan, et al.. (2023). Demonstration of a Millimeter-wave High-Power Transceiver Module using AlN Interposer. 61–63. 1 indexed citations
5.
Graff, Andreas, et al.. (2022). Analysis of Mechanical Strain in AlGaN/GaN HFETs. physica status solidi (a). 220(16). 5 indexed citations
6.
Chevtchenko, Serguei, et al.. (2022). Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors. physica status solidi (a). 219(8). 5 indexed citations
7.
Chevtchenko, Serguei, et al.. (2022). Statistical Modeling of GaN HEMTs by Direct Transfer of Variations to Model Parameters. 2 indexed citations
8.
Chevtchenko, Serguei, et al.. (2021). Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET. Semiconductor Science and Technology. 36(5). 55018–55018. 4 indexed citations
9.
Bauer, Maris, Serguei Chevtchenko, K. Yu. Osipov, et al.. (2019). A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna. IEEE Transactions on Terahertz Science and Technology. 9(4). 430–444. 99 indexed citations
10.
Lisauskas, Alvydas, et al.. (2019). Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors. Journal of Applied Physics. 125(15). 10 indexed citations
11.
Bengtsson, Olof, et al.. (2015). Dynamic behaviour of a low-noise amplifier GaN MMIC under input power overdrive. 231–234. 7 indexed citations
12.
Bengtsson, Olof, et al.. (2015). Robust stacked GaN-based low-noise amplifier MMIC for receiver applications. 1–4. 30 indexed citations
13.
Chevtchenko, Serguei, et al.. (2014). A Compact GaN-MMIC Non-Uniform Distributed Power Amplifier for 2 to 12 GHz. German Microwave Conference. 1–3. 6 indexed citations
14.
Bauer, Maris, Alvydas Lisauskas, Sebastian Boppel, et al.. (2013). Bow-tie-antenna-coupled terahertz detectors using AlGaN/GaN field-effect transistors with 0.25 micrometer gate length. European Microwave Integrated Circuit Conference. 212–215. 10 indexed citations
15.
Meliani, Chafik, et al.. (2012). A high-gain X-band GaN-MMIC power amplifier. German Microwave Conference. 1–4. 4 indexed citations
16.
Bengtsson, Olof, Serguei Chevtchenko, Ralf Doerner, P. Kurpas, & W. Heinrich. (2011). Load-pull investigation of GaN-HEMT for supply modulated applications. German Microwave Conference. 1–4. 2 indexed citations
17.
Alivov, Ya. I., et al.. (2010). n-Al0.15Ga0.85N/p-6H–SiC heterostructure and based bipolar transistor. Microelectronics Reliability. 50(12). 2090–2092. 3 indexed citations
18.
Chevtchenko, Serguei, Frank Brunner, Joachim Würfl, & G. Tränkle. (2010). Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field‐effect transistors. physica status solidi (a). 207(6). 1505–1508. 12 indexed citations
19.
Chevtchenko, Serguei, James C. Moore, Ümit Özgür, et al.. (2006). Comparative study of the (0001) and (0001¯) surfaces of ZnO. Applied Physics Letters. 89(18). 52 indexed citations
20.
Ni, Xianfeng, Necmi Bıyıklı, Qian Fan, et al.. (2006). Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy. MRS Proceedings. 955. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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