E. Simoen

565 citations

35 papers · 424 indexed · h-index 13

Co-authors: C. Claeys Jan Vanhellemont A. Czerwiński E. Gaubas Amporn Poyai Felice Crupi Gino Giusi Edward Young
Topics: Semiconductor materials and devices (22 papers)Advancements in Semiconductor Devices and Circuit Design (20 papers)Silicon and Solar Cell Technologies (15 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Nuclear Energy and Engineering
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Belgium Japan Germany

In The Last Decade

E. Simoen

33 papers receiving 404 citations

Peers

Countries citing papers authored by E. Simoen

Since Specialization

Citations

This map shows the geographic impact of E. Simoen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Simoen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Simoen more than expected).

Fields of papers citing papers by E. Simoen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Simoen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Simoen. The network helps show where E. Simoen may publish in the future.

Co-authorship network of co-authors of E. Simoen

This figure shows the co-authorship network connecting the top 25 collaborators of E. Simoen. A scholar is included among the top collaborators of E. Simoen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Simoen. E. Simoen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications 2016 ·ECS Journal of Solid State Science and Technology ·E. Simoen,R. Ritzenthaler,Myeong‐Je Cho,T. Schram,Naoto Horiguchi,(unknown),A. Spessot,P. Fazan,C. Claeys	11
2	Understanding and optimizing the floating body retention in FDSOI UTBOX 2015 ·Solid-State Electronics ·M. Aoulaiche,E. Simoen,C. Caillat,(unknown),K.K. Bourdelle,(unknown),João Antônio Martino,C. Claeys,P. Fazan,M. Jurczak	3
3	The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering 2012 ·IEEE Electron Device Letters ·(unknown),(unknown),(unknown),(unknown),João Antônio Martino,A. Veloso,M. Jurczak,E. Simoen,Cor Claeys	15
4	Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations 2011 ·Thin Solid Films ·T. Nakashima,(unknown),Isao Tsunoda,Kenichiro Takakura,(unknown),H. Ohyama,Kenji Yoshino,Mireia Bargalló González,E. Simoen,C. Claeys	4
5	Influence of the pre-treatment anneal on Co–germanide Schottky contacts 2008 ·Materials Science in Semiconductor Processing ·Luc Lajaunie,Marie‐Laure David,F. Pailloux,C. Tromas,E. Simoen,C. Claeys,J. F. Barbot	7
6	Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation 2007 ·Journal of Materials Science Materials in Electronics ·H. Ohyama,(unknown),(unknown),(unknown),S. Kuboyama,(unknown),E. Simoen,C. Claeys	0
7	Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation 2005 ·Marie‐Laure David,E. Simoen,C. Claeys,Ali Mohammadzadeh	1
8	Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs 2005 ·Solid-State Electronics ·E. Simoen,C. Claeys,N. Lukyanchikova,N. Garbar,(unknown),Paula Ghedini Der Agopian,João Antônio Martino	7
9	Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors 2004 ·Applied Physics Letters ·E. Simoen,A. Mercha,C. Claeys,Edward Young	30
10	Electron irradiation effect on thermal donors in CZ-Si 2004 ·The European Physical Journal Applied Physics ·Kenichiro Takakura,H. Ohyama,(unknown),Taichi Yoshida,J.M. Rafı́,R. Job,A. Ulyashin,E. Simoen,Cor Claeys	1
11	Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon 2003 ·Materials Science and Engineering B ·E. Simoen,C. Claeys,Roger Loo,(unknown),P. Clauws,R. Job,A. Ulyashin,W.R. Fahrner	8
12	Flicker noise in deep submicron nMOS transistors 2000 ·Solid-State Electronics ·N. Lukyanchikova,N. Garbar,(unknown),E. Simoen,C. Claeys	11
13	Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C 2000 ·Journal of The Electrochemical Society ·(unknown),(unknown),(unknown),(unknown),C. Claeys,E. Simoen,B. G. Svensson,Alexey N. Kuznetsov∥	15
14	Effect of irradiation in InGaAs photo devices 1999 ·Journal of Radioanalytical and Nuclear Chemistry ·(unknown),H. Ohyama,E. Simoen,C. Claeys,Jan Vanhellemont,(unknown),Y. Takami,(unknown)	0
15	Current transients in almost-ideal Czochralski silicon p–n junction diodes 1999 ·Applied Physics Letters ·Amporn Poyai,E. Simoen,Cor Claeys	2
16	Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon 1997 ·Journal de Physique III ·C. Claeys,E. Simoen,Jan Vanhellemont	12
17	Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs 1995 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·E. Simoen,C. Claeys	2
18	Low-frequency noise behaviour of high-energy electronirradiated Si n ⁺ p junction diodes 1995 ·Electronics Letters ·(unknown),E. Simoen,Petr Vašina,C. Claeys	6
19	Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors 1995 ·Journal of Applied Physics ·E. Simoen,C. Claeys	10
20	Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal–oxide–semiconductor transistors 1995 ·Applied Physics Letters ·E. Simoen,C. Claeys	5

About E. Simoen

E. Simoen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 35 papers that have together received 424 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Silicon and Solar Cell Technologies (15 papers). The work is most often cited by research in Electrical and Electronic Engineering (401 citations), Atomic and Molecular Physics, and Optics (104 citations) and Nuclear Energy and Engineering (1 citation). E. Simoen has collaborated with scholars based in Belgium, Japan and Germany. Frequent co-authors include C. Claeys, Jan Vanhellemont, C. Claeys, A. Czerwiński, E. Gaubas, Amporn Poyai, Felice Crupi, Gino Giusi, Edward Young and A. Mercha. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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