E. Simoen

565 total citations
35 papers, 424 citations indexed

About

E. Simoen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, E. Simoen has authored 35 papers receiving a total of 424 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in E. Simoen's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Silicon and Solar Cell Technologies (15 papers). E. Simoen is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Silicon and Solar Cell Technologies (15 papers). E. Simoen collaborates with scholars based in Belgium, Japan and Germany. E. Simoen's co-authors include C. Claeys, Jan Vanhellemont, C. Claeys, A. Czerwiński, E. Gaubas, Amporn Poyai, Felice Crupi, Gino Giusi, Edward Young and A. Mercha and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

E. Simoen

33 papers receiving 404 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Simoen Belgium 13 401 104 57 27 21 35 424
C. Claeys Belgium 13 421 1.0× 100 1.0× 57 1.0× 37 1.4× 17 0.8× 45 437
Y. Yeh United States 7 132 0.3× 84 0.8× 38 0.7× 12 0.4× 14 0.7× 31 175
Huiqi Gong United States 10 319 0.8× 65 0.6× 87 1.5× 41 1.5× 8 0.4× 24 376
V. Aubry-Fortuna France 9 420 1.0× 246 2.4× 40 0.7× 38 1.4× 5 0.2× 30 442
R. P. Gnall United States 12 437 1.1× 152 1.5× 39 0.7× 44 1.6× 3 0.1× 24 477
J.-M. Sallese Switzerland 9 371 0.9× 41 0.4× 41 0.7× 79 2.9× 9 0.4× 22 406
K.L. Hughes United States 8 529 1.3× 22 0.2× 55 1.0× 10 0.4× 12 0.6× 17 543
J.-K. Woo South Korea 7 113 0.3× 78 0.8× 37 0.6× 72 2.7× 27 1.3× 11 173
G. Chindalore United States 10 384 1.0× 103 1.0× 36 0.6× 25 0.9× 2 0.1× 17 390
P. Tüttő Hungary 8 266 0.7× 123 1.2× 106 1.9× 14 0.5× 14 0.7× 28 320

Countries citing papers authored by E. Simoen

Since Specialization
Citations

This map shows the geographic impact of E. Simoen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Simoen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Simoen more than expected).

Fields of papers citing papers by E. Simoen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Simoen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Simoen. The network helps show where E. Simoen may publish in the future.

Co-authorship network of co-authors of E. Simoen

This figure shows the co-authorship network connecting the top 25 collaborators of E. Simoen. A scholar is included among the top collaborators of E. Simoen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Simoen. E. Simoen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Simoen, E., R. Ritzenthaler, Myeong‐Je Cho, et al.. (2016). Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications. ECS Journal of Solid State Science and Technology. 5(6). N27–N31. 11 indexed citations
2.
Aoulaiche, M., E. Simoen, C. Caillat, et al.. (2015). Understanding and optimizing the floating body retention in FDSOI UTBOX. Solid-State Electronics. 117. 123–129. 3 indexed citations
3.
Martino, João Antônio, et al.. (2012). The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering. IEEE Electron Device Letters. 33(7). 940–942. 15 indexed citations
4.
Nakashima, T., Isao Tsunoda, Kenichiro Takakura, et al.. (2011). Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations. Thin Solid Films. 520(8). 3337–3340. 4 indexed citations
5.
Lajaunie, Luc, Marie‐Laure David, F. Pailloux, et al.. (2008). Influence of the pre-treatment anneal on Co–germanide Schottky contacts. Materials Science in Semiconductor Processing. 11(5-6). 300–304. 7 indexed citations
6.
Ohyama, H., et al.. (2007). Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation. Journal of Materials Science Materials in Electronics. 19(2). 171–173.
7.
David, Marie‐Laure, E. Simoen, C. Claeys, & Ali Mohammadzadeh. (2005). Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation. 48. G3–1. 1 indexed citations
8.
Simoen, E., C. Claeys, N. Lukyanchikova, et al.. (2005). Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs. Solid-State Electronics. 50(1). 52–57. 7 indexed citations
9.
Simoen, E., A. Mercha, C. Claeys, & Edward Young. (2004). Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 85(6). 1057–1059. 30 indexed citations
10.
Takakura, Kenichiro, H. Ohyama, Taichi Yoshida, et al.. (2004). Electron irradiation effect on thermal donors in CZ-Si. The European Physical Journal Applied Physics. 27(1-3). 133–135. 1 indexed citations
11.
Simoen, E., C. Claeys, Roger Loo, et al.. (2003). Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon. Materials Science and Engineering B. 102(1-3). 207–212. 8 indexed citations
12.
Lukyanchikova, N., et al.. (2000). Flicker noise in deep submicron nMOS transistors. Solid-State Electronics. 44(7). 1239–1245. 11 indexed citations
13.
Claeys, C., et al.. (2000). Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C. Journal of The Electrochemical Society. 147(7). 2727–2727. 15 indexed citations
14.
Ohyama, H., et al.. (1999). Effect of irradiation in InGaAs photo devices. Journal of Radioanalytical and Nuclear Chemistry. 239(2). 361–364.
15.
Poyai, Amporn, E. Simoen, & Cor Claeys. (1999). Current transients in almost-ideal Czochralski silicon p–n junction diodes. Applied Physics Letters. 75(21). 3342–3344. 2 indexed citations
16.
Claeys, C., E. Simoen, & Jan Vanhellemont. (1997). Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon. Journal de Physique III. 7(7). 1469–1486. 12 indexed citations
17.
Simoen, E. & C. Claeys. (1995). Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 95(1). 75–81. 2 indexed citations
18.
Simoen, E., et al.. (1995). Low-frequency noise behaviour of high-energy electronirradiated Si n + p junction diodes. Electronics Letters. 31(12). 1016–1018. 6 indexed citations
19.
Simoen, E. & C. Claeys. (1995). Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors. Journal of Applied Physics. 77(2). 910–914. 10 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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