V. Aubry-Fortuna

607 total citations
30 papers, 442 citations indexed

About

V. Aubry-Fortuna is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, V. Aubry-Fortuna has authored 30 papers receiving a total of 442 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 2 papers in Hardware and Architecture. Recurrent topics in V. Aubry-Fortuna's work include Semiconductor materials and devices (22 papers), Semiconductor materials and interfaces (15 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). V. Aubry-Fortuna is often cited by papers focused on Semiconductor materials and devices (22 papers), Semiconductor materials and interfaces (15 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). V. Aubry-Fortuna collaborates with scholars based in France, Germany and Switzerland. V. Aubry-Fortuna's co-authors include Philippe Dollfus, F. Meyer, Arnaud Bournel, S. Galdin‐Retailleau, O. Noblanc, C. Brylinski, C. Chassat, Jérôme Saint-Martin, Karim Huet and S. Galdin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

V. Aubry-Fortuna

29 papers receiving 428 citations

Peers

V. Aubry-Fortuna
P. J. Phillips United Kingdom
Y. Okuno United States
D. Vook United States
Soumava Ghosh India
R.J. Capik United States
A.G. Nassibian Australia
M. Jaime-Vasquez United States
C.L. Shieh United States
T. K. Higman United States
J. Werking United States
P. J. Phillips United Kingdom
V. Aubry-Fortuna
Citations per year, relative to V. Aubry-Fortuna V. Aubry-Fortuna (= 1×) peers P. J. Phillips

Countries citing papers authored by V. Aubry-Fortuna

Since Specialization
Citations

This map shows the geographic impact of V. Aubry-Fortuna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Aubry-Fortuna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Aubry-Fortuna more than expected).

Fields of papers citing papers by V. Aubry-Fortuna

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Aubry-Fortuna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Aubry-Fortuna. The network helps show where V. Aubry-Fortuna may publish in the future.

Co-authorship network of co-authors of V. Aubry-Fortuna

This figure shows the co-authorship network connecting the top 25 collaborators of V. Aubry-Fortuna. A scholar is included among the top collaborators of V. Aubry-Fortuna based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Aubry-Fortuna. V. Aubry-Fortuna is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Aubry-Fortuna, V., et al.. (2010). Giant piezoresistance effect in p-type silicon. 321–324.
2.
3.
Aubry-Fortuna, V., et al.. (2009). Field Dependence of Electron Velocity in High-Purity Germanium at Cryogenic Temperatures. AIP conference proceedings. 639–642. 1 indexed citations
4.
Burenkov, A., et al.. (2008). An Application-Driven Improvement of the Drift–Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices. IEEE Transactions on Electron Devices. 55(11). 3227–3235. 5 indexed citations
5.
Querlioz, Damien, Jérôme Saint-Martin, Karim Huet, et al.. (2007). On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation. IEEE Transactions on Electron Devices. 54(9). 2232–2242. 65 indexed citations
6.
Bournel, Arnaud, V. Aubry-Fortuna, Jérôme Saint-Martin, & Philippe Dollfus. (2007). Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation. Solid-State Electronics. 51(4). 543–550. 3 indexed citations
7.
Saint-Martin, Jérôme, et al.. (2004). Influence of Ballistic Effects in Ultra-Small MOSFETs. Journal of Computational Electronics. 3(3-4). 207–210. 5 indexed citations
8.
Aubry-Fortuna, V., Odette Chaix‐Pluchery, F. Fortuna, et al.. (2002). Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing. Journal of Applied Physics. 91(8). 5468–5473. 6 indexed citations
9.
Chaix‐Pluchery, Odette, B. Chenevier, V. Aubry-Fortuna, & I. Maťko. (2002). Annealing of thin Zr films on Si 1−x Ge x (0≤ x ≤1): X-ray diffraction and Raman studies. Journal of Physics and Chemistry of Solids. 63(10). 1889–1900. 2 indexed citations
10.
Aubry-Fortuna, V., F. Meyer, Vy Yam, et al.. (2002). Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots. Microelectronic Engineering. 64(1-4). 435–441. 4 indexed citations
11.
Aubry-Fortuna, V., et al.. (2001). Fermi level position at metal Si1−x−yGexCy interfaces. Journal of Applied Physics. 89(10). 5533–5542. 6 indexed citations
12.
Galdin, S., Philippe Dollfus, V. Aubry-Fortuna, P. Hesto, & H. J. Osten. (2000). Band offset predictions for strained group IV alloys: Si1-x-yGexCyon Si(001) and Si1-xGexon Si1-zGez(001). Semiconductor Science and Technology. 15(6). 565–572. 34 indexed citations
13.
Aubry-Fortuna, V., et al.. (1998). Contacts on Si1−x−yGexCy alloys: Electrical properties and thermal stability. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1659–1662. 6 indexed citations
14.
Aubry-Fortuna, V., et al.. (1998). Thermal stability and electrical properties of Zr/Si1−x−yGexCy contacts after rapid thermal annealing. Applied Physics Letters. 73(9). 1248–1250. 8 indexed citations
15.
Brémond, G., et al.. (1998). Influence of carbon on the electrical properties of W/SiGeC-p/Si(100)-p Schottky diodes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1684–1686. 4 indexed citations
16.
Aubry-Fortuna, V., M. Mamor, F. Meyer, et al.. (1997). What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?. Microelectronic Engineering. 37-38. 573–579. 6 indexed citations
17.
Vinh, Le Thanh, et al.. (1997). UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane. Thin Solid Films. 294(1-2). 59–63. 17 indexed citations
18.
Chaix‐Pluchery, Odette, G. Lucazeau, V. Aubry-Fortuna, F. Meyer, & R. Madar. (1997). Raman study of tungsten disilicide formation in thin films. Microelectronic Engineering. 37-38. 543–550. 1 indexed citations
19.
Thanh, V. Le, et al.. (1996). A metastable (√3 × √3)R30° reconstruction of the Si(111) surface, induced by silicon adatoms. Surface Science. 369(1-3). 85–90. 7 indexed citations
20.
Meyer, F., M. Mamor, V. Aubry-Fortuna, et al.. (1996). Schottky barrier heights on IV-IV compound semiconductors. Journal of Electronic Materials. 25(11). 1748–1753. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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