H. Ohyama

1.3k total citations
143 papers, 1.1k citations indexed

About

H. Ohyama is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Ohyama has authored 143 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 135 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 21 papers in Materials Chemistry. Recurrent topics in H. Ohyama's work include Semiconductor materials and devices (86 papers), Silicon and Solar Cell Technologies (60 papers) and Advancements in Semiconductor Devices and Circuit Design (53 papers). H. Ohyama is often cited by papers focused on Semiconductor materials and devices (86 papers), Silicon and Solar Cell Technologies (60 papers) and Advancements in Semiconductor Devices and Circuit Design (53 papers). H. Ohyama collaborates with scholars based in Japan, Belgium and Spain. H. Ohyama's co-authors include Eddy Simoen, S. Kuboyama, C. A. Londos, V. V. Emtsev, Toshio Hirao, Jan Vanhellemont, Y. Takami, Cor Claeys, Kenichiro Takakura and H. Sunaga and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Ohyama

133 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Ohyama Japan	18	942	301	220	111	58	143	1.1k
I. Teramoto Japan	17	780 0.8×	521 1.7×	308 1.4×	80 0.7×	19 0.3×	72	977
M.C. Carmo Portugal	18	513 0.5×	321 1.1×	670 3.0×	130 1.2×	17 0.3×	80	905
P.G. McMullin United States	13	614 0.7×	289 1.0×	93 0.4×	48 0.4×	12 0.2×	23	663
B. Kolasa United States	10	311 0.3×	169 0.6×	233 1.1×	46 0.4×	19 0.3×	21	509
C. Bocchi Italy	17	526 0.6×	697 2.3×	259 1.2×	186 1.7×	12 0.2×	72	849
Yu‐Miin Sheu Taiwan	13	266 0.3×	146 0.5×	283 1.3×	166 1.5×	12 0.2×	40	577
M. V. Yakushev Russia	18	1.1k 1.2×	613 2.0×	501 2.3×	19 0.2×	22 0.4×	165	1.2k
R. G. van Welzenis Netherlands	12	262 0.3×	170 0.6×	258 1.2×	32 0.3×	34 0.6×	32	460
Gabby Sarusi Israel	17	647 0.7×	365 1.2×	253 1.1×	81 0.7×	14 0.2×	67	769

Countries citing papers authored by H. Ohyama

Since Specialization

Citations

This map shows the geographic impact of H. Ohyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Ohyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Ohyama more than expected).

Fields of papers citing papers by H. Ohyama

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Ohyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Ohyama. The network helps show where H. Ohyama may publish in the future.

Co-authorship network of co-authors of H. Ohyama

This figure shows the co-authorship network connecting the top 25 collaborators of H. Ohyama. A scholar is included among the top collaborators of H. Ohyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Ohyama. H. Ohyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tsunoda, Isao, et al.. (2012). Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing. Materials science forum. 725. 273–276. 2 indexed citations

Voronkov, V. V., et al.. (2011). Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities. Journal of Applied Physics. 110(9). 13 indexed citations

Takakura, Kenichiro, et al.. (2010). Optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 solar cells. Thin Solid Films. 519(21). 7321–7323. 8 indexed citations

Londos, C. A., et al.. (2009). Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing. Journal of Applied Physics. 105(12). 26 indexed citations

Ohyama, H., Kazuya Matsuo, Hiroki Nakamura, et al.. (2008). Effects of electron and proton irradiation on embedded SiGe source/drain diodes. Materials Science in Semiconductor Processing. 11(5-6). 310–313. 3 indexed citations

Kuboyama, S., et al.. (2007). Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons. IEEE Transactions on Nuclear Science. 54(6). 2379–2383. 58 indexed citations

Inoue, Naoya, et al.. (2007). Quantitative analysis of complexes in electron irradiated CZ silicon. Physica B Condensed Matter. 401-402. 477–482. 14 indexed citations

Ohyama, H., T. Hirao, Eddy Simoen, et al.. (2005). Effects of high-temperature gamma ray and electron irradiation on npn Si transistors. 114–119.

Ohyama, H., et al.. (2004). Radiation Damage of InGaAs Photodiodes by High-Temperature Electron and Neutron Irradiation. ESA Special Publication. 536. 59. 1 indexed citations

10.

Ohyama, H., T. Hirao, Shinobu Onoda, et al.. (2004). Radiation damages of InGaAs photodiodes by high-temperature electron irradiation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 219-220. 718–721. 2 indexed citations

11.

Ohyama, H., Eddy Simoen, C. Claeys, et al.. (2002). Radiation effect on n-MOSFETs fabricated in a BiCMOS process. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 186(1-4). 419–423. 1 indexed citations

12.

Ohyama, H., Y. Takami, Eddy Simoen, et al.. (2001). Assessment of Radiation Induced Lattice Defects in Shallow Trench Isolation Diodes Irradiated by Neutron. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 78-79. 357–366. 2 indexed citations

13.

Czerwiński, A., Eddy Simoen, Amporn Poyai, Cor Claeys, & H. Ohyama. (2001). p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 447–452. 1 indexed citations

14.

Ohyama, H., Eddy Simoen, Cor Claeys, et al.. (2000). Impact of neutron irradiation on optical performance of InGaAsP laser diodes. Thin Solid Films. 364(1-2). 259–263. 10 indexed citations

15.

Ohyama, H., et al.. (1999). Effect of irradiation in InGaAs photo devices. Journal of Radioanalytical and Nuclear Chemistry. 239(2). 361–364.

16.

Ohyama, H., et al.. (1997). Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate. MRS Proceedings. 487. 1 indexed citations

17.

Ohyama, H., et al.. (1997). Effect of plasma oxidized Al prelayer for the epitaxial growth of Al2O3 films on Si using magnetron sputtering. Applied Surface Science. 117-118. 503–506. 2 indexed citations

18.

Ohyama, H., Jan Vanhellemont, Jef Poortmans, et al.. (1994). Germanium content dependence of radiation damage in strained Si[sub 1[minus]x]Ge[sub x] epitaxial devices. IEEE Transactions on Nuclear Science.

19.

Ohyama, H., et al.. (1988). Process of defect formation in the collector region of an electron-irradiated npn Si transistor. physica status solidi (a). 110(1). 301–308. 2 indexed citations

20.

Ishida, Mákoto, Yukio Yasuda, H. Ohyama, et al.. (1986). Growth and properties of Si films on sapphire with predeposited amorphous Si layers. Journal of Applied Physics. 59(12). 4073–4078. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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