N. Garbar

498 total citations
51 papers, 365 citations indexed

About

N. Garbar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, N. Garbar has authored 51 papers receiving a total of 365 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 2 papers in Condensed Matter Physics. Recurrent topics in N. Garbar's work include Advancements in Semiconductor Devices and Circuit Design (43 papers), Semiconductor materials and devices (40 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). N. Garbar is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (43 papers), Semiconductor materials and devices (40 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). N. Garbar collaborates with scholars based in Ukraine, Belgium and United Kingdom. N. Garbar's co-authors include N. Lukyanchikova, Eddy Simoen, Cor Claeys, A. Mercha, C. Claeys, E. Simoen, М. К. Шейнкман, E. Simoen, C. Claeys and J.M. Rafı́ and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

N. Garbar

48 papers receiving 326 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Garbar Ukraine 13 356 60 56 12 7 51 365
E. Shaw United States 8 332 0.9× 33 0.6× 117 2.1× 13 1.1× 5 0.7× 11 353
D. Delprat France 11 337 0.9× 50 0.8× 85 1.5× 14 1.2× 4 0.6× 29 349
Durgesh S. Vaidya United States 9 344 1.0× 31 0.5× 53 0.9× 11 0.9× 1 0.1× 22 366
Yu-Jiu Wang Taiwan 12 319 0.9× 49 0.8× 20 0.4× 12 1.0× 18 2.6× 20 352
Sasa Ristic United States 7 357 1.0× 15 0.3× 197 3.5× 7 0.6× 8 1.1× 25 371
H. Bissessur France 14 489 1.4× 17 0.3× 172 3.1× 9 0.8× 5 0.7× 55 497
F. Venturi Italy 11 408 1.1× 26 0.4× 89 1.6× 27 2.3× 2 0.3× 31 419
R.J.P. Lander Belgium 11 300 0.8× 43 0.7× 55 1.0× 16 1.3× 24 312
Heinz‐Gunter Bach Germany 10 253 0.7× 22 0.4× 95 1.7× 10 0.8× 2 0.3× 25 259
L. Liu Belgium 3 384 1.1× 76 1.3× 246 4.4× 28 2.3× 5 0.7× 7 405

Countries citing papers authored by N. Garbar

Since Specialization
Citations

This map shows the geographic impact of N. Garbar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Garbar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Garbar more than expected).

Fields of papers citing papers by N. Garbar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Garbar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Garbar. The network helps show where N. Garbar may publish in the future.

Co-authorship network of co-authors of N. Garbar

This figure shows the co-authorship network connecting the top 25 collaborators of N. Garbar. A scholar is included among the top collaborators of N. Garbar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Garbar. N. Garbar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Garbar, N., et al.. (2013). Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiO<sub>x</sub>/Ge Structures. Advanced materials research. 854. 21–27. 1 indexed citations
2.
Lukyanchikova, N., et al.. (2009). On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric. Applied Physics Letters. 95(3). 13 indexed citations
3.
Lukyanchikova, N., et al.. (2007). Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques. AIP conference proceedings. 922. 39–42. 3 indexed citations
4.
Lukyanchikova, N., et al.. (2006). Analytical Model for the Impact of the Twin Gate on the Floating-Body-Related Low-Frequency Noise Overshoot in Silicon-on-Insulator MOSFETs. IEEE Transactions on Electron Devices. 53(12). 3118–3128. 3 indexed citations
5.
Lukyanchikova, N., N. Garbar, S. Hall, et al.. (2006). The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates. Materials Science in Semiconductor Processing. 9(4-5). 727–731. 3 indexed citations
6.
Simoen, E., C. Claeys, N. Lukyanchikova, et al.. (2005). Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs. Solid-State Electronics. 50(1). 52–57. 7 indexed citations
7.
Simoen, Eddy, et al.. (2005). Linear-kink-noise suppression in partially depleted SOI using the twin-gate MOSFET configuration. IEEE Electron Device Letters. 26(7). 510–512. 7 indexed citations
8.
Simoen, Eddy, A. Mercha, Cor Claeys, N. Lukyanchikova, & N. Garbar. (2004). Critical Discussion of the Front–Back Gate Coupling Effect on the Low-Frequency Noise in Fully Depleted SOI MOSFETs. IEEE Transactions on Electron Devices. 51(6). 1008–1016. 27 indexed citations
9.
10.
Simoen, Eddy, A. Mercha, J.M. Rafı́, et al.. (2003). Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs. IEEE Electron Device Letters. 24(12). 751–754. 13 indexed citations
11.
Lukyanchikova, N., et al.. (2002). A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization. Solid-State Electronics. 46(12). 2053–2061. 11 indexed citations
12.
Lukyanchikova, N., et al.. (2002). Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation. 14. 14–19. 1 indexed citations
13.
Lukyanchikova, N., N. Garbar, Eddy Simoen, et al.. (2002). On the Origin of the 1/f. 75–78. 1 indexed citations
14.
Lukyanchikova, N., N. Garbar, Eddy Simoen, et al.. (2002). The 1/f/sup 1.7/ noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide. IEEE Transactions on Electron Devices. 49(12). 2367–2370. 16 indexed citations
15.
Simoen, E., Amporn Poyai, C. Claeys, et al.. (2001). Electrical characterization of shallow cobalt-silicided junctions. Journal of Materials Science Materials in Electronics. 12(4-6). 207–210. 2 indexed citations
16.
Lukyanchikova, N., et al.. (2000). Flicker noise in deep submicron nMOS transistors. Solid-State Electronics. 44(7). 1239–1245. 11 indexed citations
17.
Lukyanchikova, N., et al.. (1999). Non-trivial GR and 1/fnoise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2interface. Semiconductor Science and Technology. 14(9). 775–783. 16 indexed citations
18.
Lukyanchikova, N., et al.. (1998). RTS noise due to lateral isolation related defects in submicron nMOSFETs. Microelectronics Reliability. 38(10). 1561–1568. 6 indexed citations
19.
Lukyanchikova, N., et al.. (1997). Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 71(26). 3874–3876. 5 indexed citations
20.
Lukyanchikova, N., et al.. (1973). Light and voltage noise of lasers based on AlxGa1–xAsGaAs heterojunctions. physica status solidi (a). 20(2). 637–645. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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