J. F. Barbot

855 total citations
61 papers, 709 citations indexed

About

J. F. Barbot is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. F. Barbot has authored 61 papers receiving a total of 709 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 16 papers in Computational Mechanics. Recurrent topics in J. F. Barbot's work include Silicon and Solar Cell Technologies (32 papers), Semiconductor materials and devices (18 papers) and Ion-surface interactions and analysis (15 papers). J. F. Barbot is often cited by papers focused on Silicon and Solar Cell Technologies (32 papers), Semiconductor materials and devices (18 papers) and Ion-surface interactions and analysis (15 papers). J. F. Barbot collaborates with scholars based in France, Sweden and Brazil. J. F. Barbot's co-authors include M. F. Beaufort, Marie‐Laure David, C. Blanchard, Erwan Oliviero, E. Ntsoenzok, A. van Veen, Bengt Svensson, F. Pailloux, Anders Hallén and Giovanni Alfieri and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. F. Barbot

57 papers receiving 689 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. F. Barbot France	17	589	211	190	137	65	61	709
C. Ascheron Germany	14	383 0.7×	207 1.0×	186 1.0×	278 2.0×	42 0.6×	46	586
M. F. C. Willemsen Netherlands	13	429 0.7×	189 0.9×	124 0.7×	73 0.5×	44 0.7×	22	539
H. Oppolzer Germany	15	511 0.9×	315 1.5×	276 1.5×	79 0.6×	34 0.5×	41	688
Nicole Herbots United States	16	467 0.8×	240 1.1×	138 0.7×	258 1.9×	20 0.3×	55	606
E. Nygren United States	15	449 0.8×	320 1.5×	186 1.0×	157 1.1×	65 1.0×	27	623
A. Manuaba Hungary	14	274 0.5×	251 1.2×	95 0.5×	316 2.3×	36 0.6×	48	550
C. Dubois France	15	536 0.9×	251 1.2×	261 1.4×	96 0.7×	17 0.3×	57	711
J. B. Wallace United States	13	208 0.4×	154 0.7×	93 0.5×	121 0.9×	80 1.2×	30	416
Kou Kurosawa Japan	11	222 0.4×	155 0.7×	98 0.5×	149 1.1×	56 0.9×	75	435
Jason R. Heffelfinger United States	8	206 0.3×	207 1.0×	127 0.7×	58 0.4×	32 0.5×	22	441

Countries citing papers authored by J. F. Barbot

Since Specialization

Citations

This map shows the geographic impact of J. F. Barbot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. F. Barbot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. F. Barbot more than expected).

Fields of papers citing papers by J. F. Barbot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. F. Barbot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. F. Barbot. The network helps show where J. F. Barbot may publish in the future.

Co-authorship network of co-authors of J. F. Barbot

This figure shows the co-authorship network connecting the top 25 collaborators of J. F. Barbot. A scholar is included among the top collaborators of J. F. Barbot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. F. Barbot. J. F. Barbot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Fournier, Danièle, Fabien Giovannelli, Younès Ezzahri, et al.. (2025). Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions. Communications Materials. 6(1).

Dubois, S., et al.. (2025). Electrical properties of ScN thin films controlled by defect engineering using oxygen ion implantation. Journal of Applied Physics. 137(1).

Hurand, Simon, et al.. (2023). Effect of induced defects on conduction mechanisms of noble-gas-implanted ScN thin films. Journal of Applied Physics. 134(5). 5 indexed citations

Barbot, J. F., P.-O. Renault, D. Eyidi, et al.. (2022). Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN. ACS Applied Energy Materials. 5(9). 11025–11033. 16 indexed citations

Soueidan, Maher, Gabriel Ferro, Mihai Lazar, et al.. (2016). A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase. IEEE Transactions on Electron Devices. 63(6). 2462–2468. 32 indexed citations

Lajaunie, Luc, Marie‐Laure David, F. Pailloux, et al.. (2008). Influence of the pre-treatment anneal on Co–germanide Schottky contacts. Materials Science in Semiconductor Processing. 11(5-6). 300–304. 7 indexed citations

Beaufort, M. F., J. F. Barbot, M. Drouet, et al.. (2007). Nanocavities induced by neon Plasma Based Ion Implantation in silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 257(1-2). 750–752. 6 indexed citations

Oliviero, Erwan, L. Amaral, P.F.P. Fichtner, et al.. (2006). Damage accumulation in neon implanted silicon. Journal of Applied Physics. 100(4). 27 indexed citations

Babonneau, David, M. F. Beaufort, A. Declémy, J. F. Barbot, & J. P. Simon. (2006). Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon. Journal of Applied Physics. 99(11). 15 indexed citations

10.

David, Marie‐Laure, Giovanni Alfieri, Anders Hallén, et al.. (2004). Electrically active defects in irradiated 4H-SiC. Journal of Applied Physics. 95(9). 4728–4733. 83 indexed citations

11.

Beaufort, M. F., F. Pailloux, A. Declémy, & J. F. Barbot. (2003). Transmission electron microscopy investigations of damage induced by high energy helium implantation in 4H–SiC. Journal of Applied Physics. 94(11). 7116–7120. 20 indexed citations

12.

David, Marie‐Laure, Erwan Oliviero, C. Blanchard, & J. F. Barbot. (2002). Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 186(1-4). 309–312. 5 indexed citations

13.

Ntsoenzok, E., et al.. (2002). Shallow and deep donors induced by light ions in N-type silicon. 72. 85–88.

14.

Oliviero, Erwan, M. F. Beaufort, & J. F. Barbot. (2001). Influence of dose rate on bubble formation by high energy He implantation in silicon. Journal of Applied Physics. 90(4). 1718–1724. 21 indexed citations

15.

Démenet, J. L., et al.. (1999). Electrical Study of Dislocated Si- and C-Faces of n-Type 6H-SiC. physica status solidi (a). 171(1). 319–324. 1 indexed citations

16.

Svensson, B. G., et al.. (1999). The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses. Applied Physics Letters. 74(22). 3329–3331. 16 indexed citations

17.

Barbot, J. F., et al.. (1995). Electrical property of n-Hg0.8Cd0.2Te plastically deformed. Journal of Materials Science Letters. 14(6). 449–451. 1 indexed citations

18.

Barbot, J. F.. (1991). Deep Level Transient Spectroscopy Measurements in Hg0.3Cd0.7Te Single Crystals. physica status solidi (a). 124(2). 513–517. 5 indexed citations

19.

Blanchard, C., et al.. (1990). Type conversion by high-energy particles in Hg1−xCdxTe compounds. Journal of Applied Physics. 68(7). 3237–3242. 4 indexed citations

20.

Dieulesaint, E., et al.. (1973). Rayleigh Waves in Selenium Crystals. 383–384. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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