J.R. Shih

848 citations

72 papers · 679 indexed · h-index 13

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 51
- Advancements in Semiconductor Devices and Circuit Design 38
- Integrated Circuits and Semiconductor Failure Analysis 26
- Electrostatic Discharge in Electronics 21
- Silicon Carbide Semiconductor Technologies 12
- Electronic Packaging and Soldering Technologies 6
- Electromagnetic Compatibility and Noise Suppression 5
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics
Hardware and Architecture
Atomic and Molecular Physics, and Optics
- Magnetic properties of thin films 6

Co-authors: Tsung‐Shune Chin Kaijie Wu Tzay-Ming Hong Ji‐Jung Kai Rong‐Tan Huang Fu‐Rong Chen Dongsheng Huang Jian‐Hsing Lee
Cited by: Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters (2 papers)Journal of Applied Physics (3 papers)Journal of Physics D Applied Physics (1 paper)
Partner nations: Taiwan United States China

In The Last Decade

J.R. Shih

70 papers receiving 652 citations

Peers

Countries citing papers authored by J.R. Shih

Since Specialization

Citations

This map shows the geographic impact of J.R. Shih's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.R. Shih with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.R. Shih more than expected).

Fields of papers citing papers by J.R. Shih

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.R. Shih. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.R. Shih. The network helps show where J.R. Shih may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J.R. Shih, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.R. Shih Line = papers co-authored together J.R. Shih links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effect of Low-Pressure Gas Oxynitriding on the Microstructural Evolution and Wear Resistance of Ti-6Al-4V Alloy Lubricants ·Chih-Hao Yang,Changyu Li,Chi-Wai Chan,Peereboom J.C.,J.R. Shih,F.S. Liao,Shih‐Hsien Chang	2025	0
2	A solar energy system with a dual-input power converter and global MPPT for off-grid applications Electric Power Systems Research ·Hwa‐Dong Liu,Bin‐Juine Huang,Wei-Yu Chen,J.R. Shih	2025	2
3	Study of junction degradation and lifetime assessment in FinFETs P. J. Liao,Tung‐Yuan Ho,K. Joshi,J.R. Shih,Y.-H. Lee	2017	3
4	SILC degradation model to predict area scaling for gate dielectric breakdown in advanced technologies S. W. Chang,K. Joshi,P. J. Liao,J.R. Shih,Y.-H. Lee	2017	3
5	Study of oxygen vacancy in high-k gate dielectric by charge injection technique P. J. Liao,Shuai Gao,K. Joshi,Y.-H. Lee,T. L. Lee,H. S. Wang,Shang‐Chieh Chien,J. S. Wang,J.R. Shih,Kaijie Wu	2016	1
6	Self-heating effect in FinFETs and its impact on devices reliability characterization S. E. Liu,J. S. Wang,Ying-Ta Lu,Dongsheng Huang,C. F. Huang,Wen-Wen Hsieh,J. H. Lee,Y. S. Tsai,J.R. Shih,Y.-H. Lee,Kaijie Wu	2014	97
7	Frequency dependence of NBTI in high-k/metal-gate technology Min-Hsiu Hsieh,D. Maji,Yi-Chun Huang,T.-Y. Yew,W. Wang,Y.-H. Lee,J.R. Shih,Kaijie Wu	2014	9
8	Re-investigation of frequency dependence of PBTI/TDDB and its impact on fast switching logic circuits YH Huang,T.-Y. Yew,W. Wang,Y.-H. Lee,J.R. Shih,Kaijie Wu	2013	14
9	A junction leakage mechanism and its effects on advance SRAM failure D. Maji,P. J. Liao,Y.-H. Lee,J.R. Shih,S. C. Chen,Shuai Gao,J. H. Lee,Kai-Bin Wu	2013	4
10	Gate oxide reliability improvement for CMOS and MEMS monolithic integration Li-Jyun Tsai,P.C. Yeh,Len-Yi Leu,X.X. Kuo,J.R. Shih,Y.-H. Lee,Kai-Bin Wu,Wei Tai,Chih-Chicn Hung,Changzhi Yang,S.F. Chen	2012	1
11	A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event Jian‐Hsing Lee,J.R. Shih,Dao-Hong Yang,H.P. Kuan	2012	4
12	The failure mechanism re-investigation Of ESD device on EPI wafer Jian-Hsing Lee,Clak Kung,Ellis Kung,J.R. Shih	2012	6
13	Investigation of the self-heating effect on hot-carrier characteristics for packaged high voltage devices Symposium on VLSI Technology ·H.J. Huang,Yen-Hsiang Huang,C.C. Liu,J.R. Shih,Y.-H. Lee,Rakesh Ranjan,Len-Yi Leu,Dongwenlong Wu,Kenneth Wu	2011	4
14	A new ESD model induced yield loss during chip-on-film package process and it's failure mechanism Jian-Hsing Lee,J.R. Shih,Yuhui Huang,Ching‐Po Lin,David Su,Kenneth Wu	2011	0
15	Re-investigation of gate oxide breakdown on logic circuit reliability YH Huang,T.-Y. Yew,W. Wang,Y.-H. Lee,Rakesh Ranjan,Niraj K. Jha,P. J. Liao,J.R. Shih,Kaijie Wu	2011	10
16	The influence of decoupling capacitor on the discharge behavior of fully silcided power-clamped device under HBM ESD event Jian-Hsing Lee,J.R. Shih,H.P. Kuan,Kenneth Wu	2010	6
17	The Impact of Ball-Bonding Induced Voltage Transient on Sub-90nm CMOS Technology Jian‐Hsing Lee,J.R. Shih,B. L. Lin,Chiang-Hsin Lin,Pao-Kang Niu,Jerry Wang,Chin-Hsin Tang,Tony Oates,Kenneth Wu	2007	2
18	Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Applied Physics Letters ·Kehuey Wu,J. F. Chen,Yan‐Kuin Su,J. R. Lee,Kaung-Wan Lin,J.R. Shih,S. L. Hsu	2006	19
19	A voltage acceleration lifetime model to predict post-cycling LTDR characteristics of split-gate flash memories Ling-Chang Hu,An-Chi Kang,Tai-Yi Wu,E. Chen,J.R. Shih,H.W. Chin,Yao-Feng Lin,Kai-Bin Wu,Ya‐Chin King	2005	2
20	Comparison of ultra-thin gate oxide ESD protection capability of silicided and silicide-blocked MOSFETS J.H. Lee,J.R. Shih,K.F. Yu,Markus Wu,T.C. Ong	2004	1

About J.R. Shih

J.R. Shih is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 72 papers that have together received 679 indexed citations. Recurring topics across this work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers), Integrated Circuits and Semiconductor Failure Analysis (26 papers), Electrostatic Discharge in Electronics (21 papers), Silicon Carbide Semiconductor Technologies (12 papers), Magnetic properties of thin films (6 papers), Electronic Packaging and Soldering Technologies (6 papers) and Electromagnetic Compatibility and Noise Suppression (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (544 citations), Electronic, Optical and Magnetic Materials (124 citations) and Materials Chemistry (164 citations). J.R. Shih has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Tsung‐Shune Chin, Kaijie Wu, Tzay-Ming Hong, Ji‐Jung Kai, Rong‐Tan Huang, Fu‐Rong Chen, Dongsheng Huang, Jian‐Hsing Lee, T.C. Ong and Rakesh Ranjan. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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