G. E. Stillman

2.9k citations

79 papers · 2.1k indexed · h-index 26

Impact in

Instrumentation top 5%
- Advanced Optical Sensing Technologies
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Instrumentation 9
- Advanced Optical Sensing Technologies 9
Atomic and Molecular Physics, and Optics 59
- Semiconductor Quantum Structures and Devices 47
- Semiconductor materials and interfaces 11
- Quantum and electron transport phenomena 9

Co-authors: V. M. Robbins G. E. Bulman C. M. Wolfe L. W. Cook M.R. Brozel Inspec K. Hess N. Holonyak
Journals: Applied Physics Letters (33 papers)Journal of Applied Physics (12 papers)IEEE Transactions on Electron Devices (4 papers)Journal of The Electrochemical Society (3 papers)IEEE Electron Device Letters (2 papers)
Partner nations: United States Germany

In The Last Decade

G. E. Stillman

77 papers receiving 1.9k citations

Peers

Countries citing papers authored by G. E. Stillman

Since Specialization

Citations

This map shows the geographic impact of G. E. Stillman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. E. Stillman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. E. Stillman more than expected).

Fields of papers citing papers by G. E. Stillman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. E. Stillman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. E. Stillman. The network helps show where G. E. Stillman may publish in the future.

Co-authors

The 25 scholars most cited alongside G. E. Stillman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. E. Stillman Line = papers co-authored together G. E. Stillman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Carrier diffusion effects in III–V semiconductor structures measured by the point contact current voltage technique Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·G.W. Eldridge, Zachary K. Krumsick, Corinna Heß, O. Beyssac, Danyuan Yu, R. G. Mazur, G. E. Stillman	1992	1
2	High-power gain-guided coupled-stripe quantum well laser array by hydrogenation Applied Physics Letters ·Gordon Jackson, D. C. Hall, L. J. Guido, W. E. Plano, N. Pan, N. Holonyak, G. E. Stillman	1988	18
3	Electron and hole impact ionization coefficients in (100) and in (111) Si Journal of Applied Physics ·V. M. Robbins, David C. Markel, Kevin F. Brennan, K. Hess, G. E. Stillman	1985	36
4	Impact ionization coefficients in (111) InP Applied Physics Letters ·N. Tabatabaie, V. M. Robbins, N. Pan, G. E. Stillman	1985	12
5	Electron transport in InP at high electric fields Applied Physics Letters ·T. H. Windhorn, L. W. Cook, M. A. Haase, G. E. Stillman	1983	41
6	Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements Applied Physics Letters ·L. W. Cook, G. E. Bulman, G. E. Stillman	1982	122
7	High-field electron transport in InxGa1−xAsyP1−y (λg =1.2 μm) Applied Physics Letters ·T. H. Windhorn, L. W. Cook, G. E. Stillman	1982	5
8	An analysis of the performance of heterojunction phototransistors for fiber optic communications IEEE Transactions on Electron Devices ·R.A. Milano, P.D. Dapkus, G. E. Stillman	1982	59
9	Electroabsorption produced mixed injection and its effect on the determination of ionization coefficients Solid-State Electronics ·G. E. Bulman, L. W. Cook, G. E. Stillman	1982	20
10	Transient and noise characteristics of quantum-well heterostructure lasers Applied Physics Letters ·Eric R. Anderson, B. A. Vojak, N. Holonyak, G. E. Stillman, J. J. Coleman, P.D. Dapkus	1981	13
11	Impact ionisation in multilayered heterojunction structures Electronics Letters ·R. Chin, N. Holonyak, G. E. Stillman, J. Y. Tang, K. Hess	1980	162
12	Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition Applied Physics Letters ·R.A. Milano, T. H. Windhorn, Eric R. Anderson, G. E. Stillman, Russell D. Dupuis, P.D. Dapkus	1979	37
13	Compound Semiconductors Journal of The Electrochemical Society ·国生周, G. E. Stillman, C. M. Wolfe	1978	11
14	GaAs waveguide detectors for 1.06 μm Applied Physics Letters ·Misaki Sasanami, W. S. C. Chang, C. M. Wolfe, G. E. Stillman	1977	3
15	Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavity Applied Physics Letters ·P. D. Wright, J. J. Coleman, N. Holonyak, M. J. Ludowise, G. E. Stillman	1976	13
16	Unequal electron and hole impact ionization coefficients in GaAs Applied Physics Letters ·G. E. Stillman, C. M. Wolfe, J. A. Rossi, A.G. Foyt	1974	53
17	Electroabsorption avalanche photodiodes Applied Physics Letters ·G. E. Stillman, C. M. Wolfe, J. A. Rossi, J.P. Donnelly	1974	22
18	Residual Impurities in High-Purify Epitaxial GaAs Journal of The Electrochemical Society ·C. M. Wolfe, G. E. Stillman, L Li	1970	28
19	VOLUME EXCITATION OF AN ULTRATHIN SINGLE-MODE CdSe LASER Applied Physics Letters ·G. E. Stillman, M.D. Sirkis, J. A. Rossi, M. R. Johnson, N. Holonyak	1966	31
20	EFFECT OF DONOR IMPURITIES ON THE DIRECT-INDIRECT TRANSITION IN Ga(As1 - xPx) Applied Physics Letters ·N. Holonyak, C. J. Nuese, M.D. Sirkis, G. E. Stillman	1966	32

About G. E. Stillman

G. E. Stillman is a scholar working on Instrumentation, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films and Condensed Matter Physics, having authored 79 papers that have together received 2.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (47 papers), Semiconductor materials and devices (26 papers), Advanced Semiconductor Detectors and Materials (15 papers), Photonic and Optical Devices (14 papers), Semiconductor materials and interfaces (11 papers), Semiconductor Lasers and Optical Devices (11 papers), Quantum and electron transport phenomena (9 papers) and Advanced Optical Sensing Technologies (9 papers). The work is most often cited by research in Instrumentation (243 citations), Atomic and Molecular Physics, and Optics (1.5k citations), Electrical and Electronic Engineering (1.7k citations), Condensed Matter Physics (201 citations) and Surfaces, Coatings and Films (62 citations). G. E. Stillman has collaborated with scholars based in United States and Germany. Frequent co-authors include V. M. Robbins, G. E. Bulman, C. M. Wolfe, L. W. Cook, M.R. Brozel, Inspec, K. Hess, N. Holonyak, J. A. Rossi and T. H. Windhorn. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of The Electrochemical Society and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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