G. E. Stillman

5.5k total citations
184 papers, 4.3k citations indexed

About

G. E. Stillman is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, G. E. Stillman has authored 184 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 158 papers in Atomic and Molecular Physics, and Optics, 150 papers in Electrical and Electronic Engineering and 35 papers in Condensed Matter Physics. Recurrent topics in G. E. Stillman's work include Semiconductor Quantum Structures and Devices (140 papers), Semiconductor materials and devices (67 papers) and Advanced Semiconductor Detectors and Materials (47 papers). G. E. Stillman is often cited by papers focused on Semiconductor Quantum Structures and Devices (140 papers), Semiconductor materials and devices (67 papers) and Advanced Semiconductor Detectors and Materials (47 papers). G. E. Stillman collaborates with scholars based in United States, Japan and Türkiye. G. E. Stillman's co-authors include C. M. Wolfe, J. O. Dimmock, B. J. Skromme, N. Holonyak, S. A. Stockman, J. E. Baker, Brian T. Cunningham, T. S. Low, L. W. Cook and M. M. Tashima and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

G. E. Stillman

181 papers receiving 3.9k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
G. E. Stillman 3.6k 3.4k 877 705 327 184 4.3k
R. Fischer 3.9k 1.1× 3.7k 1.1× 886 1.0× 584 0.8× 498 1.5× 139 4.8k
W. T. Tsang 3.6k 1.0× 3.2k 1.0× 828 0.9× 360 0.5× 273 0.8× 131 4.2k
Kunishige Oe 2.5k 0.7× 2.8k 0.8× 722 0.8× 501 0.7× 378 1.2× 165 3.5k
R. E. Nahory 3.7k 1.0× 3.6k 1.1× 1.3k 1.5× 345 0.5× 482 1.5× 150 4.7k
T. J. Drummond 3.0k 0.8× 3.0k 0.9× 707 0.8× 776 1.1× 258 0.8× 149 3.8k
P. Blood 2.4k 0.7× 2.7k 0.8× 723 0.8× 466 0.7× 253 0.8× 173 3.3k
M.A. Koza 2.7k 0.8× 3.2k 0.9× 367 0.4× 321 0.5× 257 0.8× 176 3.7k
T. F. Kuech 2.1k 0.6× 1.9k 0.6× 700 0.8× 749 1.1× 236 0.7× 78 2.8k
J. Heydenreich 2.6k 0.7× 2.2k 0.7× 1.3k 1.5× 235 0.3× 327 1.0× 83 3.1k
S. Hiyamizu 3.7k 1.0× 3.6k 1.1× 638 0.7× 716 1.0× 333 1.0× 223 4.5k

Countries citing papers authored by G. E. Stillman

Since Specialization
Citations

This map shows the geographic impact of G. E. Stillman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. E. Stillman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. E. Stillman more than expected).

Fields of papers citing papers by G. E. Stillman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. E. Stillman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. E. Stillman. The network helps show where G. E. Stillman may publish in the future.

Co-authorship network of co-authors of G. E. Stillman

This figure shows the co-authorship network connecting the top 25 collaborators of G. E. Stillman. A scholar is included among the top collaborators of G. E. Stillman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. E. Stillman. G. E. Stillman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fendrich, J. A., et al.. (2003). W-band InGaP/GaAs HBT MMIC frequency sources. 1. 239–242. 1 indexed citations
2.
Kalem, Ş., et al.. (2000). Sub-Gap Excited Photoluminescence in III-V Compound Semiconductor Heterostructures. physica status solidi (b). 221(1). 517–522. 4 indexed citations
3.
Chen, Haydn, et al.. (1997). Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD. MRS Proceedings. 493. 2 indexed citations
4.
Fang, Wei, et al.. (1996). Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing. Journal of Applied Physics. 80(8). 4737–4740. 1 indexed citations
5.
Fresina, M.T., et al.. (1996). High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base. IEEE Electron Device Letters. 17(5). 226–228. 34 indexed citations
6.
Feng, M., et al.. (1996). Temperature dependent study of carbon-doped InP/InGaAs HBT's. IEEE Electron Device Letters. 17(1). 10–12. 16 indexed citations
7.
Stockman, S. A. & G. E. Stillman. (1993). Hydrogen in III-V Device Structures. Materials science forum. 148-149. 501–0. 3 indexed citations
8.
Baillargeon, James N., Xin Liu, J. E. Baker, et al.. (1993). Generation of fast-switching As2 and P2 beams from AsH3 and PH3 for gas-source molecular-beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 1045–1049. 2 indexed citations
9.
Bishop, S. G., J. J. Coleman, T. A. DeTemple, et al.. (1993). The engineering research center for compound semiconductor microelectronics. Proceedings of the IEEE. 81(1). 132–151. 1 indexed citations
10.
Stillman, G. E., et al.. (1993). Carbon Doping of InGaAs for Device Applications. MRS Proceedings. 325. 1 indexed citations
11.
Kim, Man-Hoe, et al.. (1991). Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition. Journal of Electronic Materials. 20(9). 671–679. 12 indexed citations
12.
Plano, M. A., et al.. (1989). Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy. MRS Proceedings. 163. 1 indexed citations
13.
Bose, Sukanta, et al.. (1989). Reversible light-induced reactivation of acceptors in p-type hydrogenated GaAs. Applied Physics Letters. 55(12). 1205–1207. 17 indexed citations
14.
Bulman, G. E., V. M. Robbins, & G. E. Stillman. (1985). The determination of impact ionization coefficients in. IEEE Transactions on Electron Devices. 44 indexed citations
15.
Skromme, B. J., et al.. (1984). Identification of the residual acceptors in undoped high purity InP. Applied Physics Letters. 44(3). 319–321. 31 indexed citations
16.
Low, T. S., G. E. Stillman, D. M. Collins, et al.. (1982). Spectroscopic identification of Si donors in GaAs. Applied Physics Letters. 40(12). 1034–1036. 17 indexed citations
17.
Cook, L. W., M. M. Tashima, & G. E. Stillman. (1980). Effects of a finite melt on the thickness and composition of liquid phase epitaxial InGaAsP and InGaAs layers grown by the diffusion-limited step-cooling technique. Applied Physics Letters. 36(11). 904–907. 7 indexed citations
18.
Shichijo, H., K. Hess, & G. E. Stillman. (1980). Orientation dependence of ballistic electron transport and impact ionisation. Electronics Letters. 16(6). 208–210. 6 indexed citations
19.
Waldman, J., Tom Chang, H. R. Fetterman, G. E. Stillman, & C. M. Wolfe. (1974). Recombination radiation from landau states in impactionized GaAs. Solid State Communications. 15(8). 1309–1312. 12 indexed citations
20.
Stillman, G. E., C. M. Wolfe, & J. O. Dimmock. (1970). Hall coefficient factor for polar mode scattering in n-type GaAs. Journal of Physics and Chemistry of Solids. 31(6). 1199–1204. 126 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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