Jack C. Lee

9.8k total citations · 2 hit papers
235 papers, 6.4k citations indexed

About

Jack C. Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jack C. Lee has authored 235 papers receiving a total of 6.4k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Electrical and Electronic Engineering, 70 papers in Materials Chemistry and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jack C. Lee's work include Semiconductor materials and devices (141 papers), Ferroelectric and Negative Capacitance Devices (98 papers) and Advancements in Semiconductor Devices and Circuit Design (89 papers). Jack C. Lee is often cited by papers focused on Semiconductor materials and devices (141 papers), Ferroelectric and Negative Capacitance Devices (98 papers) and Advancements in Semiconductor Devices and Circuit Design (89 papers). Jack C. Lee collaborates with scholars based in United States, Taiwan and South Korea. Jack C. Lee's co-authors include Byoung Hun Lee, R. Nieh, Xiaohan Wu, Yao‐Feng Chang, Deji Akinwande, Laegu Kang, Ruijing Ge, Burt Fowler, Yanzhen Wang and Yen‐Ting Chen and has published in prestigious journals such as Advanced Materials, Angewandte Chemie International Edition and Nature Communications.

In The Last Decade

Jack C. Lee

233 papers receiving 6.2k citations

Hit Papers

Thermal stability and electrical characteristics of ultra... 2000 2026 2008 2017 2000 2017 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jack C. Lee United States 37 5.2k 2.4k 668 661 475 235 6.4k
Gang Zou China 36 796 0.2× 1.9k 0.8× 374 0.6× 253 0.4× 281 0.6× 230 4.3k
Alpha A. Lee United Kingdom 27 1.2k 0.2× 1.1k 0.4× 430 0.6× 64 0.1× 187 0.4× 69 3.8k
Yue Yu China 37 2.3k 0.4× 3.2k 1.3× 333 0.5× 18 0.0× 519 1.1× 254 5.2k
Nino Boccara United States 15 893 0.2× 1.3k 0.5× 463 0.7× 45 0.1× 291 0.6× 37 3.0k
Horst‐Günter Rubahn Denmark 39 2.8k 0.5× 2.0k 0.8× 1.4k 2.1× 44 0.1× 950 2.0× 313 5.8k
Jianping Zhang United States 48 2.3k 0.4× 2.3k 1.0× 1.7k 2.5× 40 0.1× 96 0.2× 206 6.7k
Henry Chan United States 29 717 0.1× 1.9k 0.8× 327 0.5× 93 0.1× 133 0.3× 74 3.5k
Jun Ye China 38 2.4k 0.5× 2.4k 1.0× 657 1.0× 69 0.1× 673 1.4× 151 4.5k
Chi‐Hang Lam Hong Kong 29 976 0.2× 2.2k 0.9× 800 1.2× 9 0.0× 267 0.6× 104 3.6k

Countries citing papers authored by Jack C. Lee

Since Specialization
Citations

This map shows the geographic impact of Jack C. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jack C. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jack C. Lee more than expected).

Fields of papers citing papers by Jack C. Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jack C. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jack C. Lee. The network helps show where Jack C. Lee may publish in the future.

Co-authorship network of co-authors of Jack C. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Jack C. Lee. A scholar is included among the top collaborators of Jack C. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jack C. Lee. Jack C. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huang, Yifu, Yuqian Gu, Yao‐Feng Chang, et al.. (2023). Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research. IEEE Transactions on Electron Devices. 70(4). 1676–1681. 3 indexed citations
2.
Chen, Ying‐Chen, et al.. (2023). Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory. ECS Journal of Solid State Science and Technology. 12(6). 65003–65003. 1 indexed citations
3.
Huang, Yifu, Yuqian Gu, Andrei Dolocan, et al.. (2023). Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors. Advanced Functional Materials. 34(15). 34 indexed citations
4.
Chen, Ying‐Chen, et al.. (2022). Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application. ACS Applied Engineering Materials. 1(1). 252–257. 3 indexed citations
5.
Huang, Yifu, et al.. (2022). Effect of Temperature on Analog Memristor in Neuromorphic Computing. IEEE Transactions on Electron Devices. 69(11). 6102–6105. 12 indexed citations
6.
Wang, Yang, Xingli Zou, Sheng Han, et al.. (2021). Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2. ACS Applied Materials & Interfaces. 13(36). 43115–43122. 18 indexed citations
7.
Wang, Yang, Xingli Zou, Sheng Han, et al.. (2021). Wafer-Scale Synthesis of WS 2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition. Research. 2021. 9862483–9862483. 21 indexed citations
8.
Ryu, Jiho, Chandreswar Mahata, Muhammad Ismail, et al.. (2020). Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures. Journal of Physics D Applied Physics. 53(43). 435102–435102. 15 indexed citations
10.
Li, Ji, Hsien‐Yi Hsu, Jack C. Lee, Allen J. Bard, & Edward T. Yu. (2018). High-Performance Photodetectors Based on Solution-Processed Epitaxial Grown Hybrid Halide Perovskites. Nano Letters. 18(2). 994–1000. 112 indexed citations
11.
Chen, Ying‐Chen, Burt Fowler, Hui‐Chun Huang, et al.. (2018). Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications. Nanoscale. 10(33). 15608–15614. 29 indexed citations
12.
Chang, Yao‐Feng, Burt Fowler, Ying‐Chen Chen, et al.. (2018). Beyond SiOx: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria. Journal of Materials Chemistry C. 6(47). 12788–12799. 9 indexed citations
13.
Chen, Ying‐Chen, Chih-Yang Lin, Hui‐Chun Huang, et al.. (2017). Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application. Journal of Physics D Applied Physics. 51(5). 55108–55108. 22 indexed citations
14.
Chang, Yao‐Feng, Burt Fowler, Ying‐Chen Chen, et al.. (2016). Resistive switching characteristics and mechanisms in silicon oxide memory devices. Physical Sciences Reviews. 1(5). 1 indexed citations
15.
Chang, Yao‐Feng, Burt Fowler, Ying‐Chen Chen, et al.. (2016). A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiO x -based resistive switching memory. Physical Sciences Reviews. 1(4). 1 indexed citations
16.
Li, Ji, Yao‐Feng Chang, Burt Fowler, et al.. (2013). Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography. Nano Letters. 14(2). 813–818. 97 indexed citations
17.
Verzellesi, G., et al.. (2011). Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–3. 1 indexed citations
18.
Lee, Jack C., et al.. (2008). On Prediction of Financial Distress Using the Discrete-time Survival Model. 16(1). 99. 1 indexed citations
19.
Lin, Tsung‐I, et al.. (2007). Finite mixture modelling using the skew normal distribution. Statistica Sinica. 17(3). 909–927. 147 indexed citations
20.
Maiti, B., et al.. (1992). Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process. Applied Physics Letters. 61(15). 1790–1792. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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