Tahui Wang

1.4k citations

121 papers · 1.1k indexed · h-index 18

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 106
- Advancements in Semiconductor Devices and Circuit Design 80
- Advanced Memory and Neural Computing 26
- Ferroelectric and Negative Capacitance Devices 26
- Integrated Circuits and Semiconductor Failure Analysis 26
- Silicon Carbide Semiconductor Technologies 13
Computer Networks and Communications top 10%
- Advanced Data Storage Technologies 12
Electronic, Optical and Magnetic Materials
Materials Chemistry
- Electronic and Structural Properties of Oxides 14
Hardware and Architecture

Co-authors: Chih-Yuan Lu N. K. Zous Wen-Jer Tsai Chih‐Yuan Lu Chih-Wei Hsu C.H. Diaz Yuheng Liu Min‐Cheng Chen
Cited by: Electrical and Electronic Engineering Computer Networks and Communications Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices (21 papers)IEEE Electron Device Letters (14 papers)Journal of Applied Physics (7 papers)
Partner nations: Taiwan United States China

In The Last Decade

Tahui Wang

118 papers receiving 1.0k citations

Peers

Countries citing papers authored by Tahui Wang

Since Specialization

Citations

This map shows the geographic impact of Tahui Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tahui Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tahui Wang more than expected).

Fields of papers citing papers by Tahui Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tahui Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tahui Wang. The network helps show where Tahui Wang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Tahui Wang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tahui Wang Line = papers co-authored together Tahui Wang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation of Vth Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory IEEE Transactions on Electron Devices ·ارازقلی خوجم لی,Tahui Wang,DE Eckert,Anja Petersen,Guan-Wei Wu,K.A. Furunes,C. Brecher,Wen-Jer Tsai,Julian Theuriet,Kuang‐Chao Chen,Chih-Yuan Lu	2021	2
2	Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory IEEE Transactions on Electron Devices ·Yuheng Liu,S. J. Warburton,Tahui Wang,Wen-Jer Tsai,Julian Theuriet,Kuang‐Chao Chen,Chih-Yuan Lu	2019	5
3	Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory Anja Petersen,DE Eckert,浩峰庞,Carlos Daniel Rivas Bejar,T Reif-Gintl,K.A. Furunes,Wen-Jer Tsai,Kwame Opoku Owusu,Ioanna Mavrantoni,Tahui Wang,Chih‐Yuan Lu	2018	6
4	Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory Alba Sánchez Batalla,K.A. Furunes,梁田庚,Shao Yuan-gang,G Shirakawa,Wen-Jer Tsai,Jesus A. Trejos,Wei Lü,Ioar Rivas,Tahui Wang,Chih‐Yuan Lu	2018	2
5	Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress Applied Physics Letters ·Omer Faruk Manzak,重剛大櫃,Tahui Wang	2012	2
6	Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory ارازقلی خوجم لی,Aline Aubert,A. Schleiger,Tahui Wang,J. Chandana,Ioanna Mavrantoni,Chih-Yuan Lu	2010	2
7	Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell IEEE Electron Device Letters ·A. Schleiger,ارازقلی خوجم لی,Aline Aubert,Tahui Wang,K.A. Furunes,کاوه پورحبیبی,Sugey Alexandra Batallas Ayovi,Wei Lü,Ioanna Mavrantoni,Chih-Yuan Lu	2009	4
8	Overall operation considerations for a SONOS-based memory M. Steinbach,Hua Yang,B. Rodelas,A. Bollar,Kuan‐Fu Chen,Yochai Swissa,Jung-Yu Hsieh,Paige Bromley,N. K. Zous,八十二早川,吉郎石濱,Wei Lü,Ioar Rivas,Tahui Wang,C.-Y. Lu	2009	2
9	Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory Aline Aubert,ارازقلی خوجم لی,A. Schleiger,Tahui Wang,K.A. Furunes,کاوه پورحبیبی,Vincent Chen,Wei Lü,Ioanna Mavrantoni,Chih-Yuan Lu	2009	2
10	Effects of length scaling on electromigration in dual-damascene copper interconnects Microelectronics Reliability ·Gabriela Ayala,Gabriela Ayala,JI Le-qu,JI Le-qu,Tahui Wang	2008	15
11	Bipolar Charge Trapping Induced Anomalous Negative Bias-Temperature Instability in HfSiON Gate Dielectric pMOSFETs IEEE Transactions on Device and Materials Reliability ·Feng Cui-ying,A. Schleiger,Tahui Wang,A. Zaitsev,Chih‐Sheng Chang	2007	2
12	Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells IEEE Transactions on Electron Devices ·耐介森,Chih-Wei Hsu,Tahui Wang,Malini Seshadri,Jinzhou Wu,Chih-Yuan Lu	2007	54
13	A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient IEEE Transactions on Electron Devices ·Tahui Wang,A. Zaitsev,Feng Cui-ying,Ma Ángeles Farrán,C.J. Hamson,Y.-L. Chen,D.D. Tang	2006	31
14	Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs H.C. Lai,N. K. Zous,Wen-Jer Tsai,Tien‐Chang Lu,Tahui Wang,Balázs Sándor Gál,Merve Boşnak	2003	6
15	Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique Tahui Wang,秀明佐久間,Chinwei Wu,Audrey Anne Margaret D. Pablo,Shyam Mohan	2002	2
16	Oxide Soft Breakdown Effects on Drain Current Flicker Noise in Ultra-Thin Oxide CMOS Devices G. H�bener,Hung‐Chih Chang,Tahui Wang	2002	1
17	Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction IEEE Electron Device Letters ·E. Cheu,Chih-Chiang Wang,James Myall,Tahui Wang,Peter B. Griffin,C.H. Diaz	2001	38
18	Field enhanced oxide charge detrapping in n-MOSFET's Tahui Wang,Hasret Yavuz,Anna Maria Schirano,张映新	1996	5
19	Quantum confinement effects on low-dimensional electron mobility Journal of Applied Physics ·Tahui Wang,E. Graverini,BV Sheela	1993	13
20	Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method IEEE Transactions on Electron Devices ·Ki-Ho Chang,Tahui Wang,Zolt n Rakonczay,Mi Chang,Jianqin Fu	1992	25

About Tahui Wang

Tahui Wang is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications, Materials Chemistry, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 121 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (106 papers), Advancements in Semiconductor Devices and Circuit Design (80 papers), Advanced Memory and Neural Computing (26 papers), Ferroelectric and Negative Capacitance Devices (26 papers), Integrated Circuits and Semiconductor Failure Analysis (26 papers), Electronic and Structural Properties of Oxides (14 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Advanced Data Storage Technologies (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.0k citations), Computer Networks and Communications (116 citations), Electronic, Optical and Magnetic Materials (73 citations), Materials Chemistry (161 citations) and Hardware and Architecture (23 citations). Tahui Wang has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Chih-Yuan Lu, N. K. Zous, Wen-Jer Tsai, Chih‐Yuan Lu, Chih-Wei Hsu, C.H. Diaz, Yuheng Liu, Min‐Cheng Chen, Kuang‐Chao Chen and Chih-Chiang Wang. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of Applied Physics, Applied Physics Letters and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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