Yao‐Jen Lee

2.5k total citations
137 papers, 1.8k citations indexed

About

Yao‐Jen Lee is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Yao‐Jen Lee has authored 137 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 131 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 23 papers in Materials Chemistry. Recurrent topics in Yao‐Jen Lee's work include Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (63 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). Yao‐Jen Lee is often cited by papers focused on Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (63 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). Yao‐Jen Lee collaborates with scholars based in Taiwan, Japan and United States. Yao‐Jen Lee's co-authors include Tuo‐Hung Hou, Cheng-Tung Chou, Jiann Shieh, Po‐Tsun Liu, Po-Jung Sung, Tien‐Sheng Chao, Fu-Kuo Hsueh, Sourav De, Darsen D. Lu and Li-Feng Teng and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yao‐Jen Lee

126 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yao‐Jen Lee Taiwan 22 1.6k 557 189 186 159 137 1.8k
M.-J. Tsai Taiwan 17 1.2k 0.7× 415 0.7× 116 0.6× 158 0.8× 206 1.3× 53 1.3k
Mindaugas Lukosius Germany 20 1.2k 0.7× 906 1.6× 215 1.1× 87 0.5× 157 1.0× 81 1.6k
S. Hall United Kingdom 19 1.1k 0.7× 400 0.7× 74 0.4× 102 0.5× 195 1.2× 112 1.2k
Tianjun Cao China 12 1.3k 0.8× 962 1.7× 155 0.8× 214 1.2× 130 0.8× 15 1.6k
Eilam Yalon Israel 23 1.2k 0.7× 1.3k 2.4× 220 1.2× 198 1.1× 98 0.6× 81 1.9k
Chuangui Wu China 18 620 0.4× 402 0.7× 357 1.9× 194 1.0× 160 1.0× 90 957
Yongli Che China 20 697 0.4× 591 1.1× 206 1.1× 189 1.0× 93 0.6× 45 940
Wenbo Luo China 18 897 0.5× 472 0.8× 206 1.1× 262 1.4× 114 0.7× 97 1.2k
Donghun Lee South Korea 12 1.0k 0.6× 835 1.5× 150 0.8× 170 0.9× 85 0.5× 24 1.4k
Seong‐Ho Cho South Korea 11 650 0.4× 595 1.1× 256 1.4× 88 0.5× 224 1.4× 31 977

Countries citing papers authored by Yao‐Jen Lee

Since Specialization
Citations

This map shows the geographic impact of Yao‐Jen Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yao‐Jen Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yao‐Jen Lee more than expected).

Fields of papers citing papers by Yao‐Jen Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yao‐Jen Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yao‐Jen Lee. The network helps show where Yao‐Jen Lee may publish in the future.

Co-authorship network of co-authors of Yao‐Jen Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Yao‐Jen Lee. A scholar is included among the top collaborators of Yao‐Jen Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yao‐Jen Lee. Yao‐Jen Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Yao‐Jen, et al.. (2025). AC Impedance Compared to DC Characterization for Source-Drain Resistance in Junctionless Gate-All-Around MOSFETs. IEEE Journal of the Electron Devices Society. 13. 963–968.
2.
3.
Lee, Yao‐Jen, et al.. (2025). Damage-Free Neutral Beam Etching for Gate Recess in E-Mode AlGaN/GaN HEMTs. IEEE Electron Device Letters. 46(5). 705–708.
4.
Wu, Chenwei, et al.. (2024). Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz. IEEE Transactions on Electron Devices. 71(8). 4710–4716. 3 indexed citations
5.
Lee, Yao‐Jen, et al.. (2024). Threshold Voltage Stability in AlGaN/GaN MIS-HEMT Structure Under Cryogenic Environment. IEEE Transactions on Electron Devices. 71(11). 6566–6572. 3 indexed citations
6.
Lee, Yao‐Jen, et al.. (2024). Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress. IEEE Journal of the Electron Devices Society. 12. 464–471. 4 indexed citations
7.
Lee, Yao‐Jen, et al.. (2024). Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses. ECS Journal of Solid State Science and Technology. 13(6). 65008–65008. 5 indexed citations
8.
Lee, Yao‐Jen, et al.. (2024). Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress. SHILAP Revista de lepidopterología. 5. 9–16. 5 indexed citations
9.
Wang, Yeong‐Her, et al.. (2023). Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques. IEEE Transactions on Electron Devices. 70(4). 2028–2033. 1 indexed citations
10.
Lee, Yao‐Jen, et al.. (2023). Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing. SHILAP Revista de lepidopterología. 4. 150–155. 7 indexed citations
11.
Chuang, Ricky W., Zuo‐Min Tsai, Yao‐Jen Lee, et al.. (2022). A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology. IEEE Electron Device Letters. 43(11). 1798–1801. 1 indexed citations
12.
Tsai, Cheng‐Hsien, Yu‐Ming Chang, Po-Jung Sung, et al.. (2022). 3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM. IEEE Journal of the Electron Devices Society. 11. 107–113. 3 indexed citations
13.
De, Sourav, et al.. (2021). Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses. IEEE Electron Device Letters. 42(8). 1144–1147. 23 indexed citations
14.
De, Sourav, Darsen D. Lu, Yao‐Jen Lee, et al.. (2021). Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology. Symposium on VLSI Technology. 1–2. 21 indexed citations
15.
Sung, Po-Jung, Kuo-Hsing Kao, Chien-Ting Wu, et al.. (2020). Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters. IEEE Transactions on Electron Devices. 67(9). 3504–3509. 40 indexed citations
16.
Lu, Darsen D., et al.. (2020). Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks. Semiconductor Science and Technology. 35(9). 95007–95007. 14 indexed citations
17.
Kao, Kuo-Hsing, et al.. (2020). Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures. IEEE Electron Device Letters. 41(9). 1296–1299. 30 indexed citations
18.
Lee, Yao‐Jen, et al.. (2019). Characteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealing. ECS Journal of Solid State Science and Technology. 8(9). P457–P463. 1 indexed citations
19.
Sung, Po-Jung, Fu-Ju Hou, Fu-Kuo Hsueh, et al.. (2017). High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications. IEEE Transactions on Electron Devices. 64(5). 2054–2060. 15 indexed citations
20.
Hou, Fu-Ju, Po-Jung Sung, Fu-Kuo Hsueh, et al.. (2016). Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs. IEEE Transactions on Electron Devices. 63(10). 3837–3843. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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