Yao‐Feng Chang

4.3k citations

121 papers · 3.4k indexed · h-index 33

Impact in

Cellular and Molecular Neuroscience top 2%
- Neuroscience and Neural Engineering
- Photoreceptor and optogenetics research
Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices

Papers in

Electrical and Electronic Engineering 109
- Advanced Memory and Neural Computing 93
- Ferroelectric and Negative Capacitance Devices 69
- Semiconductor materials and devices 30
- Advancements in Semiconductor Devices and Circuit Design 12
Cellular and Molecular Neuroscience 24
- Neuroscience and Neural Engineering 22

Co-authors: Ying‐Chen Chen Jack C. Lee George F. Corliss Burt Fowler Sungjun Kim Fei Zhou Byung‐Gook Park John Weiss
Journals: Applied Physics Letters (19 papers)Journal of Applied Physics (10 papers)IEEE Transactions on Electron Devices (7 papers)ECS Journal of Solid State Science and Technology (5 papers)Nanoscale (3 papers)
Partner nations: United States Taiwan South Korea

In The Last Decade

Yao‐Feng Chang

118 papers receiving 3.3k citations

Peers

Countries citing papers authored by Yao‐Feng Chang

Since Specialization

Citations

This map shows the geographic impact of Yao‐Feng Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yao‐Feng Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yao‐Feng Chang more than expected).

Fields of papers citing papers by Yao‐Feng Chang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yao‐Feng Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yao‐Feng Chang. The network helps show where Yao‐Feng Chang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Yao‐Feng Chang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yao‐Feng Chang Line = papers co-authored together Yao‐Feng Chang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	CMOS‐Compatible HfO_x‐Based Radiation Hardening Component for Neuromorphic Computing Applications Advanced Electronic Materials ·Yao‐Feng Chang, Yifu Huang, Seyoum Hailu, Ying‐Chen Chen	2025	0
2	Gamma Irradiation in HfOₓ-Based Resistive Switching Memory With Mitigated Performance Degradation Using Ruthenium Electrode IEEE Transactions on Electron Devices ·Ying‐Chen Chen, Chao-Cheng Lin, Tuo‐Hung Hou, Seyoum Hailu, Yao‐Feng Chang	2024	1
3	Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems ACS Nano ·Yoon‐Seok Lee, Yifu Huang, Yao‐Feng Chang, Sung Jin Yang, 民恵松浦, D. Boskov, Yuki Zenimoto, Sunghun Kim, Jungwoo Lee, Deji Akinwande, Sungjun Kim	2024	17
4	Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS₂ Memristors Advanced Functional Materials ·Yifu Huang, Yuqian Gu, Yuki Zenimoto, Andrei Dolocan, 民恵松浦, D. Boskov, 真里子松田, 付占昭, Yao‐Feng Chang, Ying‐Chen Chen, Jamie H. Warner, Michael T. Pettes, Jack C. Lee, Deji Akinwande	2023	34
5	BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation IEEE Transactions on Electron Devices ·Ying‐Chen Chen, Pan Chuanjiang, Chang-Hsien Lin, Yao‐Feng Chang	2023	6
6	Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research IEEE Transactions on Electron Devices ·Yifu Huang, Yuqian Gu, Yao‐Feng Chang, Ying‐Chen Chen, Deji Akinwande, Jack C. Lee	2023	3
7	Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory ECS Journal of Solid State Science and Technology ·Ying‐Chen Chen, Yao‐Feng Chang, Manjari Ravuthan, Chang-Hsien Lin	2022	1
8	Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions Micromachines ·Ying‐Chen Chen, Pan Chuanjiang, Yao‐Feng Chang	2021	32
9	A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices Materials Today Physics ·Chih‐Yang Lin, Po‐Hsun Chen, N Chandana, Wei‐Chen Huang, 章澤本, Yan‐Gu Lin, Wen‐Chang Chen, Bruno Demeyere, Yao‐Feng Chang, Ying‐Chen Chen, Hui‐Chun Huang, Xin Ma, Yue Hao, Simon M. Sze	2020	10
10	A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process IEEE Solid-State Circuits Letters ·S. Kulkarni, 研吾倉橋, Muhammad Fadhil Syukron, Fang‐Lin Chao, Yao‐Feng Chang, E. Kadyrov, Andani Putri Wibowo, Polina Yuryevna Prilepko, Виктор Николаевич Татаринов, Jiabo Li, Zhao Qing-fang, B. Sell, Uddalak Bhattacharya, Ying Zhang	2020	6
11	Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures Journal of Physics D Applied Physics ·Liudmila Rozanova, Jiho Ryu, Chandreswar Mahata, Muhammad Ismail, Ying‐Chen Chen, Yao‐Feng Chang, Seongjae Cho, Alexey Mikhaylov, Jack C. Lee, Sungjun Kim	2020	15
12	The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector IEEE Transactions on Electron Devices ·C. BERENDS, Chih‐Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Chih‐Cheng Shih, Yi‐Ting Tseng, Haimei Zheng, Ying‐Chen Chen, Yao‐Feng Chang, Amy VanderMeeden, Hui‐Chun Huang, José da Silva Araújo Júnior, Hao Wang, Simon M. Sze	2018	31
13	Neuronal dynamics in HfO_x/AlO_y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching Nanoscale ·Sungjun Kim, Jia Chen, Ying‐Chen Chen, Min‐Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiangshui Miao, Yao‐Feng Chang, Byung‐Gook Park	2018	107
14	Beyond SiO_x: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria Journal of Materials Chemistry C ·Yao‐Feng Chang, Burt Fowler, Ying‐Chen Chen, Chih-Yang Lin, Gaobo Xu, Hui‐Chun Huang, Jia Chen, Sungjun Kim, Yi Li, Jack C. Lee	2018	9
15	Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications Nanoscale ·Ying‐Chen Chen, Raquel Vásquez, Mirna Sagche, Burt Fowler, Hui‐Chun Huang, Pan Chuanjiang, Sungjun Kim, Yao‐Feng Chang, Jack C. Lee	2018	29
16	Ultralow power switching in a silicon-rich SiN_y/SiN_x double-layer resistive memory device Physical Chemistry Chemical Physics ·Sungjun Kim, Yao‐Feng Chang, Min‐Hwi Kim, Marissa Leonand, Tae‐Hyeon Kim, Ying‐Chen Chen, Jong‐Ho Lee, Byung‐Gook Park	2017	27
17	Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode Nanoscale ·Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Shengdong Zhang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Yi‐Ting Tseng, Yao‐Feng Chang, Ying‐Chen Chen, Hui‐Chun Huang, Simon M. Sze	2017	58
18	Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application Journal of Physics D Applied Physics ·Ying‐Chen Chen, Chih-Yang Lin, Hui‐Chun Huang, Sungjun Kim, Burt Fowler, Yao‐Feng Chang, Xiaohan Wu, Gaobo Xu, Ting‐Chang Chang, Jack C. Lee	2017	22
19	A 190～225 GHz high efficiency Schottky diode doubler with circuit substrate flip-chip mounted JOURNAL OF INFRARED AND MILLIMETER WAVES ·Yao‐Feng Chang	2015	4
20	A fuzzy MCDM approach to building a model of high performance project team - a case study International journal of innovative computing, information & control ·Yao‐Feng Chang, Junzo Watada, Hiroaki Ishii	2012	8

About Yao‐Feng Chang

Yao‐Feng Chang is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Polymers and Plastics, Numerical Analysis and Materials Chemistry, having authored 121 papers that have together received 3.4k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (93 papers), Ferroelectric and Negative Capacitance Devices (69 papers), Semiconductor materials and devices (30 papers), Electronic and Structural Properties of Oxides (23 papers), Neuroscience and Neural Engineering (22 papers), Transition Metal Oxide Nanomaterials (16 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Semiconductor materials and interfaces (9 papers). The work is most often cited by research in Cellular and Molecular Neuroscience (992 citations), Electrical and Electronic Engineering (2.6k citations), Polymers and Plastics (592 citations), Numerical Analysis (173 citations) and Statistical and Nonlinear Physics (345 citations). Yao‐Feng Chang has collaborated with scholars based in United States, Taiwan and South Korea. Frequent co-authors include Ying‐Chen Chen, Jack C. Lee, George F. Corliss, Burt Fowler, Sungjun Kim, Fei Zhou, Byung‐Gook Park, John Weiss, M. Tabor and Ting‐Chang Chang. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, ECS Journal of Solid State Science and Technology and Nanoscale.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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