M.S. Liang

1.5k citations

104 papers · 960 indexed · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Industrial and Manufacturing Engineering top 5%
- Industrial Vision Systems and Defect Detection

Papers in ⓘ

Electrical and Electronic Engineering 95
- Semiconductor materials and devices 74
- Advancements in Semiconductor Devices and Circuit Design 42
- Integrated Circuits and Semiconductor Failure Analysis 24
- Ferroelectric and Negative Capacitance Devices 16
- Electronic Packaging and Soldering Technologies 10
- Advancements in Photolithography Techniques 7
Electronic, Optical and Magnetic Materials 28
- Copper Interconnects and Reliability 28

Co-authors: Chengpu Yu (14 shared papers)S.C. Chen (10 shared papers)C. H. Yu (2 shared papers)S.M. Jang (14 shared papers)Yinxi Jin (8 shared papers)J.-Y. Choi (1 shared paper)R.W. Brodersen (4 shared papers)Fu‐Hsiang Ko (1 shared paper)
Journals: IEEE Electron Device Letters (13 papers)Applied Physics Letters (8 papers)IEEE Transactions on Electron Devices (3 papers)Solid-State Electronics (3 papers)Thin Solid Films (2 papers)
Partner nations: Taiwan United States China

In The Last Decade

M.S. Liang

91 papers receiving 916 citations

Peers

Countries citing papers authored by M.S. Liang

Since Specialization

Citations

This map shows the geographic impact of M.S. Liang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.S. Liang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.S. Liang more than expected).

Fields of papers citing papers by M.S. Liang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.S. Liang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.S. Liang. The network helps show where M.S. Liang may publish in the future.

Co-authors

The 25 scholars most cited alongside M.S. Liang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.S. Liang Line = papers co-authored together M.S. Liang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 104 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Virtual metrology: a solution for wafer to wafer advanced process control P. T. Chen, S.Y. Wu, Junshien Lin, Fu‐Hsiang Ko, H. Lo, J. Wang, C. H. Yu, M.S. Liang	2005	84
2	A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film Journal of Applied Physics ·Jer‐Chyi Wang, S. H. Chiao, Chee-Leong Lee, Tan Fu Lei, Y. M. Lin, M. F. Wang, S. C. Chen, Chengpu Yu, M.S. Liang	2002	79
3	Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application Chien‐Hao Chen, T.L. Lee, Tuo‐Hung Hou, C.L. Chen, C.C. Chen, J. Hsu, Kaixuan Cheng, Yu‐Jing Chiu, H.J. Tao, Yinxi Jin, C.H. Diaz, S.C. Chen, M.S. Liang	2004	77
4	A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides IEEE Transactions on Electron Devices ·Kuo-Nan Yang, Huan-Tsung Huang, Ming-Chin Chang, Che-Min Chu, Yuh-Shu Chen, Ming‐Jer Chen, Yeou-Ming Lin, Mo-Chiun Yu, S.M. Jang, Chengpu Yu, M.S. Liang	2000	42
5	Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs IEEE Transactions on Electron Devices ·Kaisen Yang, H.T. Huang, M.J. Chen, Yih‐Jyh Lin, Miao Yu, S.M. Jang, D.C.H. Yu, M.S. Liang	2001	42
6	Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling IEEE Electron Device Letters ·M.S. Liang, Chih-Yao Chang, Y.T. Yeow, Chi‐Chang Hu, R.W. Brodersen	1983	32
7	Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric Applied Physics Letters ·Cheng Yang, Yuanxing Fang, Chia‐Hung Chen, S. F. Chen, C.Y. Lin, C.S. Lin, M. F. Wang, Yih‐Jyh Lin, Tuo‐Hung Hou, L.G. Yao, S. C. Chen, M.S. Liang	2003	30
8	Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide IEEE Electron Device Letters ·Wei-Ting Wu, Bing‐Yue Tsui, Y.P. Huang, Fan-Chun Hsieh, M.C. Chen, Yunfei Hou, Yinxi Jin, H.J. Tao, S.C. Chen, M.S. Liang	2006	26
9	Thickness dependence of oxide breakdown under high field and current stress Applied Physics Letters ·M.S. Liang, J.-Y. Choi	1987	26
10	High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference National University of Singapore ·Chao‐Hsin Wu, B.F. Hung, Albert Chin, S. J. Wang, W.J. Chen, Xiaopeng Wang, M.-F. Li, Chunxiang Zhu, Yinxi Jin, H.J. Tao, S. C. Chen, M.S. Liang	2006	24
11	The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond IEEE Electron Device Letters ·S.F. Ting, Y.K. Fang, Chang‐Hsiao Chen, Chih-Wei Yang, W.T. Hsieh, Jyh‐Jier Ho, Miao Yu, S. M. Jang, Chengpu Yu, M.S. Liang, Siming Chen, Robert Shih	2001	21
12	Low-k dielectrics characterization for damascene integration S.-W. Lin, C. Jin, L. M. Lui, M.H. Tsai, Marcel Daniels, Alejandro G. González, J. T. Wetzel, K.A. Monnig, P.A. Winebarger, Seongmin Jang, D.C.H. Yu, M.S. Liang	2001	21
13	Characterization of very thin gate-oxide MOS devices M.S. Liang, Jeong Y. Choi, P.K. Ko, Chenming Hu	1984	21
14	Effects of germanium and carbon coimplants on phosphorus diffusion in silicon Applied Physics Letters ·Kai‐Wei Ku, C. F. Nieh, Jingjing Gong, Long Huang, Yu‐Miin Sheu, C. C. Wang, C. H. Chen, H. Chang, L. T. Wang, T. L. Lee, S. C. Chen, M.S. Liang	2006	20
15	Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion IEEE Electron Device Letters ·Chang‐Hsiao Chen, Y.K. Fang, Chih-Wei Yang, S.F. Ting, Yong-Shiuan Tsair, Miao Yu, Tuo‐Hung Hou, M.F. Wang, S.C. Chen, Chengpu Yu, M.S. Liang	2001	18
16	Numerical modeling and characterization of the stress migration behaviour upon various 90 nanometer Cu/Low k interconnects Tong Huang, Chia-Yu Yao, Wenchao Wan, Chin Hsia, M.S. Liang	2004	18
17	Characterization of Pd-free electroless Co-based cap selectively deposited on Cu surface via borane-based reducing agent Thin Solid Films ·S. Y. Chang, C.C. Wan, Y.Y. Wang, Chun-Hsing Shih, Ming-Hsien Tsai, S.L. Shue, Chenghui Yu, M.S. Liang	2006	17
18	A full Cu damascene metallization process for sub-0.18 /spl mu/m RF CMOS SoC high Q inductor and MIM capacitor application at 2.4 GHz and 5.3 GHz Chang-Hsien Lin, Hong‐Ming Hsu, Y.H. Chen, T. R. Shih, S. M. Jang, C. H. Yu, M.S. Liang	2001	16
19	Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations. Aaron Thean, L. Prabhu, Victor Vartanian, M. Ramón, B.-Y. Nguyen, T. White, Heather Collard, Qiwei Xie, Sharon Murphy, J. Cheek, S. Venkatesan, J. Mogab, Chih-Sheng Chang, Yu‐Jing Chiu, H.C. Tuan, Y.C. See, M.S. Liang, Yi‐Chiang Sun	2006	16
20	Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks Applied Physics Letters ·Jen-Chieh Liao, Yuanxing Fang, Y.T. Hou, C.L. Hung, P.F. Hsu, Kaiqi Lin, Kevin Huang, T. L. Lee, M.S. Liang	2008	14

About M.S. Liang

M.S. Liang is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 104 papers that have together received 960 indexed citations. Recurring topics across this work include Semiconductor materials and devices (74 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Copper Interconnects and Reliability (28 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers), Ferroelectric and Negative Capacitance Devices (16 papers), Electronic Packaging and Soldering Technologies (10 papers), Semiconductor materials and interfaces (7 papers) and Advancements in Photolithography Techniques (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (834 citations), Industrial and Manufacturing Engineering (76 citations), Electronic, Optical and Magnetic Materials (119 citations), Statistics, Probability and Uncertainty (23 citations) and Materials Chemistry (149 citations). M.S. Liang has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Chengpu Yu, S.C. Chen, C. H. Yu, S.M. Jang, Yinxi Jin, J.-Y. Choi, R.W. Brodersen, Fu‐Hsiang Ko, Tuo‐Hung Hou and S.Y. Wu. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Solid-State Electronics and Thin Solid Films.

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