K.-S. Li

460 total citations
8 papers, 395 citations indexed

About

K.-S. Li is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, K.-S. Li has authored 8 papers receiving a total of 395 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 1 paper in Mechanics of Materials. Recurrent topics in K.-S. Li's work include Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and devices (7 papers) and MXene and MAX Phase Materials (5 papers). K.-S. Li is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and devices (7 papers) and MXene and MAX Phase Materials (5 papers). K.-S. Li collaborates with scholars based in Taiwan, Saudi Arabia and United States. K.-S. Li's co-authors include M. H. Lee, Ming-Han Liao, P.-G. Chen, K.-T. Chen, C.-Y. Liao, C. W. Liu, Chieh Lo, Yu-Chen Chou, Shu-Tong Chang and Ming Tang and has published in prestigious journals such as IEEE Electron Device Letters, IEEE Transactions on Semiconductor Manufacturing and King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology).

In The Last Decade

K.-S. Li

8 papers receiving 382 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K.-S. Li Taiwan	6	385	265	21	6	6	8	395
Konstantin Mertens Germany	14	392 1.0×	218 0.8×	18 0.9×	11 1.8×	6 1.0×	31	400
Sukhrob Abdulazhanov Germany	10	299 0.8×	188 0.7×	11 0.5×	5 0.8×	8 1.3×	25	313
Takashi Onaya Japan	12	382 1.0×	293 1.1×	15 0.7×	5 0.8×	12 2.0×	33	385
Thomas Szyjka Germany	8	364 0.9×	306 1.2×	10 0.5×	7 1.2×	9 1.5×	11	380
Saúl Estandía Spain	13	560 1.5×	488 1.8×	20 1.0×	5 0.8×	24 4.0×	19	598
Geun Taek Yu South Korea	8	346 0.9×	256 1.0×	26 1.2×		17 2.8×	9	369
Yen-Kai Lin United States	18	780 2.0×	261 1.0×	47 2.2×	11 1.8×	4 0.7×	37	786
Kun Hee Ye South Korea	5	198 0.5×	186 0.7×	29 1.4×	3 0.5×	7 1.2×	15	227
Kuen-Yi Chen Taiwan	10	339 0.9×	196 0.7×	22 1.0×	6 1.0×	11 1.8×	18	346
Stephen L. Weeks United States	9	401 1.0×	359 1.4×	29 1.4×	4 0.7×	23 3.8×	11	432

Countries citing papers authored by K.-S. Li

Since Specialization

Citations

This map shows the geographic impact of K.-S. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.-S. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.-S. Li more than expected).

Fields of papers citing papers by K.-S. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.-S. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.-S. Li. The network helps show where K.-S. Li may publish in the future.

Co-authorship network of co-authors of K.-S. Li

This figure shows the co-authorship network connecting the top 25 collaborators of K.-S. Li. A scholar is included among the top collaborators of K.-S. Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.-S. Li. K.-S. Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

8 of 8 papers shown

1.

Li, K.-S. & Shun-ichiro Ohmi. (2025). Ar/N₂ Gas Flow Rate Dependence on the Ferroelectric HfNₓ Thin Film Formation by ECR-Plasma Sputtering. IEEE Transactions on Semiconductor Manufacturing. 38(3). 459–462. 1 indexed citations

2.

Chen, K.-T., C.-Y. Liao, Chieh Lo, et al.. (2019). Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ With High Data Retention and Read Endurance for 1T Memory Applications. IEEE Electron Device Letters. 40(3). 399–402. 97 indexed citations

3.

Lee, M. H., K.-T. Chen, C.-Y. Liao, et al.. (2018). Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs. 31.8.1–31.8.4. 38 indexed citations

4.

Lee, M. H., Cheng Tang, C.-Y. Liao, et al.. (2018). Ferroelectric Characteristics of Ultra-thin Hf<inf>1-x</inf>Zr<inf>x</inf>O<inf>2</inf> Gate Stack and 1T Memory Operation Applications. 271–273. 1 indexed citations

5.

Lee, M. H., P.-G. Chen, Y. C. Chou, et al.. (2017). Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. 1–2. 6 indexed citations

6.

Lee, M. H., Cheng Tang, P.-G. Chen, et al.. (2016). Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs. 12.1.1–12.1.4. 129 indexed citations

7.

Lee, M. H., et al.. (2015). Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off 0.2V, and hysteresis-free strategies. 22.5.1–22.5.4. 104 indexed citations

8.

Chen, Min‐Cheng, K.-S. Li, Lain‐Jong Li, et al.. (2014). Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs. King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology). 33.5.1–33.5.4. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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