B. Łucznik

2.9k total citations
114 papers, 2.3k citations indexed

About

B. Łucznik is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, B. Łucznik has authored 114 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Condensed Matter Physics, 51 papers in Electrical and Electronic Engineering and 47 papers in Materials Chemistry. Recurrent topics in B. Łucznik's work include GaN-based semiconductor devices and materials (110 papers), ZnO doping and properties (43 papers) and Ga2O3 and related materials (40 papers). B. Łucznik is often cited by papers focused on GaN-based semiconductor devices and materials (110 papers), ZnO doping and properties (43 papers) and Ga2O3 and related materials (40 papers). B. Łucznik collaborates with scholars based in Poland, Japan and Netherlands. B. Łucznik's co-authors include Michał Boćkowski, I. Grzegory, S. Porowski, Tomasz Sochacki, Mikolaj Amilusik, J.L. Weyher, Małgorzata Iwińska, Stanisław Krukowski, M. Wróblewski and T. Suski and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

B. Łucznik

111 papers receiving 2.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Łucznik Poland 26 2.0k 1.0k 1.0k 949 539 114 2.3k
P. Bogusławski Poland 24 1.3k 0.6× 1.6k 1.6× 1.1k 1.1× 994 1.0× 965 1.8× 76 2.7k
I. Gorczyca Poland 29 2.0k 1.0× 1.6k 1.5× 978 1.0× 860 0.9× 998 1.9× 113 3.0k
A. Georgakilas Greece 29 1.8k 0.9× 863 0.8× 947 0.9× 1.3k 1.3× 928 1.7× 202 2.7k
R. Schlesser United States 28 1.7k 0.9× 1.0k 1.0× 807 0.8× 834 0.9× 356 0.7× 99 2.3k
David F. Storm United States 27 1.5k 0.8× 579 0.6× 745 0.7× 913 1.0× 670 1.2× 94 2.0k
Haruo Sunakawa Japan 17 2.0k 1.0× 1.1k 1.0× 858 0.8× 782 0.8× 769 1.4× 36 2.3k
T. D. Moustakas United States 21 1.6k 0.8× 1.1k 1.1× 841 0.8× 686 0.7× 613 1.1× 74 2.2k
T. Paskova Sweden 31 2.7k 1.3× 1.8k 1.7× 1.6k 1.6× 1.1k 1.2× 976 1.8× 207 3.4k
Tsvetanka Zheleva United States 25 2.0k 1.0× 1.4k 1.4× 1.0k 1.0× 1.2k 1.3× 669 1.2× 73 2.9k
Okhyun Nam South Korea 30 2.8k 1.4× 1.3k 1.3× 1.2k 1.2× 1.2k 1.3× 1.1k 2.1× 148 3.2k

Countries citing papers authored by B. Łucznik

Since Specialization
Citations

This map shows the geographic impact of B. Łucznik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Łucznik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Łucznik more than expected).

Fields of papers citing papers by B. Łucznik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Łucznik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Łucznik. The network helps show where B. Łucznik may publish in the future.

Co-authorship network of co-authors of B. Łucznik

This figure shows the co-authorship network connecting the top 25 collaborators of B. Łucznik. A scholar is included among the top collaborators of B. Łucznik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Łucznik. B. Łucznik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Amilusik, Mikolaj, Tomasz Sochacki, Mateusz Fijałkowski, et al.. (2025). Detailed study of HVPE-GaN doped with silicon. Journal of Crystal Growth. 653. 128069–128069. 1 indexed citations
2.
Kempisty, Paweł, et al.. (2025). The Impact of GaN Crystal Growth on Ammonia Flow Dynamics in Ammonothermal Processes. Crystals. 15(3). 261–261. 1 indexed citations
3.
Amilusik, Mikolaj, Marcin Zając, Tomasz Sochacki, et al.. (2022). Carbon and Manganese in Semi-Insulating Bulk GaN Crystals. Materials. 15(7). 2379–2379. 10 indexed citations
4.
Kirste, Lutz, Karolina Grabiańska, Robert Kucharski, et al.. (2021). Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials. 14(19). 5472–5472. 23 indexed citations
5.
Ren, Xiangting, Pengfei Liu, Sylwester J. Rzoska, et al.. (2021). Indentation Response of Calcium Aluminoborosilicate Glasses Subjected to Humid Aging and Hot Compression. Materials. 14(13). 3450–3450. 3 indexed citations
6.
Kucharski, Robert, Tomasz Sochacki, B. Łucznik, & Michał Boćkowski. (2020). Growth of bulk GaN crystals. Journal of Applied Physics. 128(5). 97 indexed citations
7.
Iwińska, Małgorzata, Marcin Zając, B. Łucznik, et al.. (2019). Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds. Japanese Journal of Applied Physics. 58(SC). SC1047–SC1047. 25 indexed citations
8.
Sochacki, Tomasz, Mikolaj Amilusik, Małgorzata Iwińska, et al.. (2014). Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed. physica status solidi (b). 252(5). 1172–1179. 26 indexed citations
9.
Chèze, Caroline, Marta Sawicka, M. Siekacz, et al.. (2013). Step-flow growth mode instability of N-polar GaN under N-excess. Applied Physics Letters. 103(7). 15 indexed citations
10.
Boćkowski, Michał, I. Grzegory, B. Łucznik, et al.. (2011). High nitrogen pressure solution growth of bulk GaN in “feed‐seed” configuration. physica status solidi (a). 208(7). 1507–1510. 8 indexed citations
11.
Grzegory, I., Michał Boćkowski, B. Łucznik, et al.. (2011). Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration. Journal of Crystal Growth. 350(1). 50–55. 13 indexed citations
12.
Boćkowski, Michał, I. Grzegory, B. Łucznik, et al.. (2010). High nitrogen pressure solution (HNPS) growth of GaN on 2 inch free standing GaN substrates. Science in China. Series E, Technological sciences. 54(1). 42–46. 7 indexed citations
13.
Cywiński, G., R. Kudrawiec, W. Rzodkiewicz, et al.. (2009). Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths. Applied Physics Express. 2(11). 111001–111001. 5 indexed citations
14.
Franssen, G., T. Suski, M. Kryśko, et al.. (2008). Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1485–1487. 9 indexed citations
15.
Miasojedovas, S., et al.. (2008). Carrier recombination under one-photon and two-photon excitation in GaN epilayers. Micron. 40(1). 118–121. 2 indexed citations
16.
Wysmołek, A., D. Wasik, Jacek Szczytko, et al.. (2007). Magneto-optical studies of iron impurity in HVPE GaN. Physica B Condensed Matter. 401-402. 458–461. 1 indexed citations
17.
Kempisty, Paweł, I. Grzegory, Michał Boćkowski, et al.. (2006). Mass flow and reaction analysis of the growth of GaN by HVPE. physica status solidi (a). 203(1). 131–134. 2 indexed citations
18.
Weyher, J.L., G. Kamler, G. Nowak, et al.. (2005). Defects in GaN single crystals and homoepitaxial structures. Journal of Crystal Growth. 281(1). 135–142. 22 indexed citations
19.
Boćkowski, Michał, I. Grzegory, B. Łucznik, et al.. (2004). Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method. physica status solidi (b). 241(12). 2685–2688. 1 indexed citations
20.
Grzegory, I., Michał Boćkowski, B. Łucznik, et al.. (1997). GaN Crystals: Growth and Doping Under Pressure. MRS Proceedings. 482. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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