D. Débarre

1.6k total citations
79 papers, 1.3k citations indexed

About

D. Débarre is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. Débarre has authored 79 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 38 papers in Atomic and Molecular Physics, and Optics and 27 papers in Materials Chemistry. Recurrent topics in D. Débarre's work include Semiconductor Quantum Structures and Devices (25 papers), Silicon and Solar Cell Technologies (19 papers) and Silicon Nanostructures and Photoluminescence (18 papers). D. Débarre is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Silicon and Solar Cell Technologies (19 papers) and Silicon Nanostructures and Photoluminescence (18 papers). D. Débarre collaborates with scholars based in France, Japan and Slovakia. D. Débarre's co-authors include J. Boulmer, D. Bouchier, P. Boucaud, V. Le Thanh, C. Marcenat, J. P. Taran, E. Bustarret, P. Achatz, M. Péalat and J. Kačmarčík and has published in prestigious journals such as Nature, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

D. Débarre

76 papers receiving 1.2k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
D. Débarre 688 622 496 253 177 79 1.3k
M. J. Ashwin 971 1.4× 1.0k 1.6× 482 1.0× 166 0.7× 122 0.7× 84 1.5k
W. Schmid 1.3k 1.9× 882 1.4× 493 1.0× 153 0.6× 140 0.8× 66 1.6k
R. Butz 657 1.0× 803 1.3× 447 0.9× 152 0.6× 196 1.1× 46 1.3k
J. R. A. Cleaver 787 1.1× 561 0.9× 306 0.6× 177 0.7× 256 1.4× 91 1.3k
Brigitte Attal‐Trétout 224 0.3× 230 0.4× 672 1.4× 137 0.5× 181 1.0× 52 1.3k
Akira Sugimura 977 1.4× 713 1.1× 425 0.9× 257 1.0× 83 0.5× 105 1.4k
L. Jastrzȩbski 1.6k 2.4× 933 1.5× 622 1.3× 212 0.8× 96 0.5× 114 1.9k
A. J. SpringThorpe 1.7k 2.4× 1.4k 2.3× 380 0.8× 249 1.0× 57 0.3× 134 2.0k
Haruo Nagai 1.6k 2.3× 1.2k 1.9× 571 1.2× 185 0.7× 58 0.3× 94 1.9k
Shun‐ichi Gonda 818 1.2× 740 1.2× 603 1.2× 107 0.4× 180 1.0× 84 1.3k

Countries citing papers authored by D. Débarre

Since Specialization
Citations

This map shows the geographic impact of D. Débarre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Débarre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Débarre more than expected).

Fields of papers citing papers by D. Débarre

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Débarre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Débarre. The network helps show where D. Débarre may publish in the future.

Co-authorship network of co-authors of D. Débarre

This figure shows the co-authorship network connecting the top 25 collaborators of D. Débarre. A scholar is included among the top collaborators of D. Débarre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Débarre. D. Débarre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lábár, János L., S. Lequien, B. Pécz, et al.. (2024). Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers. APL Materials. 12(12).
2.
Hoummada, K., et al.. (2023). Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field. The European Physical Journal Applied Physics. 98. 40–40.
3.
Chiodi, F., Frédéric Fossard, F. Lefloch, et al.. (2013). Gas Immersion Laser Doping for superconducting nanodevices. Applied Surface Science. 302. 209–212. 8 indexed citations
4.
Kociniewski, T., C. Marcenat, P. Achatz, et al.. (2010). Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers. Physical Review B. 82(14). 10 indexed citations
5.
Yam, Vy, et al.. (2007). Mechanism of vertical correlation in Ge/Si(001) islands multilayer structures by chemical vapor deposition. Journal of Applied Physics. 102(11). 1 indexed citations
6.
Bustarret, E., C. Marcenat, P. Achatz, et al.. (2006). Superconductivity in doped cubic silicon. Nature. 444(7118). 465–468. 207 indexed citations
7.
Fossard, Frédéric, Mathieu Halbwax, Vy Yam, et al.. (2006). Selective Epitaxial Growth Of Si And Relaxed Ge By UHV-CVD In Si(001) Windows. ECS Transactions. 3(7). 593–598. 1 indexed citations
8.
Kakushima, Kuniyuki, D. Débarre, J. Boulmer, et al.. (2004). Fabrication of heavily boron doped mechanical resonators. SPIRE - Sciences Po Institutional REpository. 1. 328–331. 5 indexed citations
9.
Kakushima, Kuniyuki, J. Boulmer, D. Débarre, et al.. (2003). MEMS applications of laser-induced ultra-shallow and ultraheavy boron-doping of silicon above the solid-solubility. SPIRE - Sciences Po Institutional REpository. 129–130. 1 indexed citations
10.
Débarre, D., et al.. (2002). Laser Doping for Ultra-Shallow Junctions Monitored by Time Resolved Optical Measurements. IEICE Transactions on Electronics. 85(5). 1098–1103. 2 indexed citations
11.
Bouchier, D., et al.. (2002). Surface roughening of tensilely strained Si1−x−yGexCy films grown by ultrahigh vacuum chemical vapor deposition. Applied Physics Letters. 81(15). 2746–2748. 11 indexed citations
12.
Yam, Vy, V. Le Thanh, P. Boucaud, D. Débarre, & D. Bouchier. (2002). Kinetics of the heteroepitaxial growth of Ge on Si(001). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 1251–1258. 12 indexed citations
13.
Dragnea, Bogdan, J. Boulmer, D. Débarre, & Bernard Bourguignon. (2001). Growth of a SiC layer on Si(100) from adsorbed propene by laser melting. Journal of Applied Physics. 90(1). 449–455. 3 indexed citations
14.
Lazare, Sylvain, et al.. (1999). Submicron-resolution ablation with a KrF excimer laser beam patterned with a projection lens. Applied Physics A. 69(7). S413–S417. 7 indexed citations
15.
Boucaud, P., V. Le Thanh, S. Sauvage, et al.. (1998). Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition. Thin Solid Films. 336(1-2). 240–243. 8 indexed citations
16.
Thanh, V. Le, D. Bouchier, & D. Débarre. (1997). Fabrication of SiGe quantum dots on a Si(100) surface. Physical review. B, Condensed matter. 56(16). 10505–10510. 22 indexed citations
17.
Boulmer, J., C. Guedj, & D. Débarre. (1997). Incorporation of substitutional carbon in Si and SiGe by laser processing in methane and propylene. Thin Solid Films. 294(1-2). 137–140. 3 indexed citations
18.
Boulmer, J., et al.. (1995). Laser chemical etching of copper films. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2403. 425–425. 1 indexed citations
19.
Boulmer, J., P. Boucaud, C. Guedj, et al.. (1995). Realization of heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100). Journal of Crystal Growth. 157(1-4). 436–441. 21 indexed citations
20.
Boulmer, J., Bernard Bourguignon, J. Budin, & D. Débarre. (1989). Time of flight study of low pressure laser etching of silicon by chlorine. Applied Surface Science. 43(1-4). 424–431. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. J. Ashwin Breakdown of academic impact, for papers by W. Schmid Breakdown of academic impact, for papers by R. Butz Breakdown of academic impact, for papers by J. R. A. Cleaver Breakdown of academic impact, for papers by Brigitte Attal‐Trétout Breakdown of academic impact, for papers by Akira Sugimura Breakdown of academic impact, for papers by L. Jastrzȩbski Breakdown of academic impact, for papers by A. J. SpringThorpe Breakdown of academic impact, for papers by Haruo Nagai Breakdown of academic impact, for papers by Shun‐ichi Gonda
Rankless by CCL
2026