D. Bolze

1.1k total citations
47 papers, 478 citations indexed

About

D. Bolze is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, D. Bolze has authored 47 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 3 papers in Computational Mechanics. Recurrent topics in D. Bolze's work include Silicon and Solar Cell Technologies (25 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers) and Semiconductor materials and interfaces (18 papers). D. Bolze is often cited by papers focused on Silicon and Solar Cell Technologies (25 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers) and Semiconductor materials and interfaces (18 papers). D. Bolze collaborates with scholars based in Germany, France and United Kingdom. D. Bolze's co-authors include J. Bauer, W. Lerch, B. Heinemann, H. Rücker, S. Paul, F. Cristiano, R. Kurps, Bernd Tillack, P. Schley and D. Krüger and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

D. Bolze

46 papers receiving 453 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Bolze Germany	12	409	143	65	64	57	47	478
Li-Qun Xia United States	10	316 0.8×	145 1.0×	127 2.0×	51 0.8×	34 0.6×	24	397
Taroh Inada Japan	12	294 0.7×	159 1.1×	69 1.1×	32 0.5×	38 0.7×	36	331
R. Carin France	13	470 1.1×	103 0.7×	115 1.8×	43 0.7×	90 1.6×	44	545
T. Inada Japan	11	397 1.0×	214 1.5×	111 1.7×	27 0.4×	82 1.4×	51	465
S. Zerlauth Austria	11	313 0.8×	240 1.7×	179 2.8×	80 1.3×	31 0.5×	28	433
Nguyen Hong Ky Switzerland	15	430 1.1×	289 2.0×	79 1.2×	56 0.9×	23 0.4×	33	494
M. Koike Japan	9	293 0.7×	190 1.3×	145 2.2×	45 0.7×	62 1.1×	34	423
J.H. Evans–Freeman United Kingdom	10	274 0.7×	156 1.1×	131 2.0×	50 0.8×	29 0.5×	54	336
B. Ghyselen France	13	513 1.3×	193 1.3×	107 1.6×	164 2.6×	44 0.8×	53	581
W. M. van de Wijgert Netherlands	10	397 1.0×	124 0.9×	195 3.0×	52 0.8×	28 0.5×	11	445

Countries citing papers authored by D. Bolze

Since Specialization

Citations

This map shows the geographic impact of D. Bolze's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Bolze with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Bolze more than expected).

Fields of papers citing papers by D. Bolze

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Bolze. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Bolze. The network helps show where D. Bolze may publish in the future.

Co-authorship network of co-authors of D. Bolze

This figure shows the co-authorship network connecting the top 25 collaborators of D. Bolze. A scholar is included among the top collaborators of D. Bolze based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Bolze. D. Bolze is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Koffel, S., P. Pichler, D. Giubertoni, et al.. (2013). On an improved boron segregation calibration from a particularly sensitive power MOS process. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(1). 12–15. 2 indexed citations

Fox, A., B. Heinemann, R. Barth, et al.. (2008). SiGe HBT module with 2.5 ps gate delay. 22. 1–4. 28 indexed citations

Paul, S., W. Lerch, John D. Chan, et al.. (2008). Optimum activation and diffusion with a combination of spike and flash annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(1). 293–297. 2 indexed citations

Lerch, W., S. Paul, S. McCoy, et al.. (2008). Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing. Materials Science and Engineering B. 154-155. 3–13. 12 indexed citations

Lerch, W., S. Paul, S. McCoy, et al.. (2007). Advanced Activation and Deactivation of Arsenic-Implanted Ultra-Shallow Junctions using Flash and Spike + Flash Annealing. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 191–196. 6 indexed citations

Schroder, D.K., Michael Current, Trudo Clarysse, et al.. (2007). Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(5). 1588–1592. 6 indexed citations

Lerch, W., S. Paul, John D. Chan, et al.. (2007). Experimental and theoretical results of dopant activation by a combination of spike and flash annealing. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 994. 129–134. 4 indexed citations

Paul, S., W. Lerch, & D. Bolze. (2006). Spike Annealing of Shallow Arsenic and Phosphorus Implants in Different Gaseous Ambient. AIP conference proceedings. 866. 109–112. 3 indexed citations

McCoy, S., et al.. (2006). Advanced Activation and Stability of Ultra-Shallow Junctions Using Flash-Assisted RTP. b22. 73–83. 2 indexed citations

10.

Tillack, Bernd, Y. Yamamoto, D. Bolze, et al.. (2005). Atomic layer processing for doping of SiGe. Thin Solid Films. 508(1-2). 279–283. 16 indexed citations

11.

Cowern, N. E. B., B. Colombeau, J. D. Benson, et al.. (2005). Mechanisms of B deactivation control by F co-implantation. Applied Physics Letters. 86(10). 55 indexed citations

12.

Krüger, D., H. Rücker, B. Heinemann, et al.. (2004). Diffusion and segregation of shallow As and Sb junctions in silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 455–458. 6 indexed citations

13.

Colombeau, B., A. J. Smith, N. E. B. Cowern, et al.. (2004). Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control. 73. 971–974. 6 indexed citations

14.

Arguirov, T., M. Kittler, W. Seifert, et al.. (2003). Luminescence of Silicon Implanted with Phosphorus. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 289–296. 2 indexed citations

15.

Rücker, H., B. Heinemann, D. Bolze, et al.. (2003). Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. 345–348. 20 indexed citations

16.

Rücker, H., B. Heinemann, D. Bolze, et al.. (2002). Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects. 7. 199–202.

17.

Knoll, D., H. Rücker, B. Heinemann, et al.. (2002). HBT before CMOS, a new modular SiGe BiCMOS integration scheme. 22.2.1–22.2.4. 3 indexed citations

18.

Knoll, D., B. Heinemann, R. Barth, et al.. (1998). Low Cost, 50 GHz Fmax Si/SiGe Heterojunction Bipolar Transistor Technology with Epi-Free Collector Wells. European Solid-State Device Research Conference. 140–143. 6 indexed citations

19.

Knoll, D., B. Heinemann, D. Bolze, et al.. (1998). Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors. Journal of Electronic Materials. 27(9). 1022–1026. 2 indexed citations

20.

Knoll, D., B. Heinemann, K.‐E. Ehwald, et al.. (1995). Comparison of P In Situ Spike Doped with as Implanted Poly Silicon Emitters Concerning Si/SiGe/Si HBT Application. European Solid-State Device Research Conference. 627–630. 1 indexed citations

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