Taroh Inada

413 citations

36 papers · 331 indexed · h-index 12

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Condensed Matter Physics 7
- GaN-based semiconductor devices and materials 7
Electrical and Electronic Engineering 33
- Semiconductor materials and devices 22
- Silicon and Solar Cell Technologies 16
- Advancements in Semiconductor Devices and Circuit Design 5

Co-authors: Tohru Hara Tohru Nakamura Shigekí Kato Tadatsugu Itoh Seiji Suzuki Masato Nakajima Fumiko Yano Nobuyuki Sugii
Journals: Applied Physics Letters (6 papers)Journal of The Electrochemical Society (5 papers)Journal of Applied Physics (4 papers)Japanese Journal of Applied Physics (2 papers)IEICE Transactions on Electronics (2 papers)
Partner nations: Japan

In The Last Decade

Taroh Inada

35 papers receiving 315 citations

Peers

Countries citing papers authored by Taroh Inada

Since Specialization

Citations

This map shows the geographic impact of Taroh Inada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Taroh Inada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Taroh Inada more than expected).

Fields of papers citing papers by Taroh Inada

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Taroh Inada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Taroh Inada. The network helps show where Taroh Inada may publish in the future.

Co-authors

The 22 scholars most cited alongside Taroh Inada, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Taroh Inada Line = papers co-authored together Taroh Inada links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Characterization of silicon ion-implanted GaN and AlGaN Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Kazuki Nomoto, 车辉, Masataka Satoh, Taroh Inada, Tohru Nakamura	2011	6
2	Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Tomohisa Shiino, 邵友诚, Tohru Nakamura, Taroh Inada	2009	9
3	Fabrication and electrical characteristics of Ti/Al ohmic contact to Si⁺ implanted GaN MRS Proceedings ·Nobuyuki Ito, Akira Suzuki, IshwarSingh, Kazuki Nomoto, Teresa Schulenburg, Tomoyoshi Mishima, Taroh Inada, Tohru Nakamura, Masataka Satoh	2005	0
4	Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs) IEICE Transactions on Electronics ·Josiane Sartoretto, Tohru Nakamura, Seiji Suzuki, Taroh Inada	1996	1
5	The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR Josiane Sartoretto, Seiji Suzuki, Taroh Inada	1996	2
6	Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing Japanese Journal of Applied Physics ·Josiane Sartoretto, Tohru Nakamura, Naoto NAGAHISA, Pamela Bartoszewicz, Taroh Inada	1995	10
7	Nitrogen implantation in (100)-β-SiC layers grown on Si substrate Journal of Applied Physics ·Esley Torres, Taroh Inada	1995	22
8	Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies) IEICE Transactions on Electronics ·Josiane Sartoretto, Tohru Nakamura, Taroh Inada	1994	1
9	Boron δ-doping in Si using atmospheric pressure CVD Applied Surface Science ·Josiane Sartoretto, Tohru Nakamura, Taroh Inada	1994	10
10	Ultrashallow p-type layer formation by rapid vapor-phase doping using a lamp annealing apparatus Applied Physics Letters ·Josiane Sartoretto, Yintong Song, Yutaka Kaneko, F. B. Straub, Vika Aprianti, Naoto NAGAHISA, Taroh Inada	1994	15
11	Phosphorus Direct Doping from Vapor Phase into Silicon for Shallow Junctions Journal of The Electrochemical Society ·Josiane Sartoretto, Tohru Nakamura, Naoto NAGAHISA, Taroh Inada	1994	19
12	Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping Journal of The Electrochemical Society ·Josiane Sartoretto, Tohru Nakamura, Taroh Inada, Disediakan Menggunakan, Esley Torres	1993	16
13	Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method MRS Proceedings ·Esley Torres, Taroh Inada	1991	1
14	Selenium implantation in epitaxial gallium arsenide layers Nuclear Instruments and Methods ·Taroh Inada, Raissa Franco Moda, G. Kaule, Conrrado Jimenez, Adam Pietrobon	1981	5
15	Zinc implantation in gallium phosphide Nuclear Instruments and Methods ·Amirhossein Kazemi, Taroh Inada	1981	2
16	Ion implantation in indium phosphide Nuclear Instruments and Methods ·Taroh Inada, G. Kaule, Tohru Hara	1981	10
17	Chemical Vapor Deposition of Silicon Nitride: Encapsulant Layers for Annealing Gallium Arsenide Journal of The Electrochemical Society ·Taroh Inada, А. Е. Калинин, I.B. Konstantynova, Tohru Hara, Masato Nakajima	1978	33
18	Auger-electron-spectroscopy (AES) measurements on anodically oxidized layers of single-crystal GaP Applied Physics Letters ·Akira Okada, Amirhossein Kazemi, Taroh Inada	1978	5
19	Magnesium and zinc ion implantation into sulfur-doped GaP Applied Physics Letters ·Taroh Inada, KARIN VAN BOETZELAER	1974	7
20	DOPING OF SILICON BY ION IMPLANTATION Applied Physics Letters ·Tadatsugu Itoh, Taroh Inada, Larisa Genin	1968	22

About Taroh Inada

Taroh Inada is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Computational Mechanics, having authored 36 papers that have together received 331 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Silicon and Solar Cell Technologies (16 papers), Semiconductor materials and interfaces (12 papers), GaN-based semiconductor devices and materials (7 papers), Ion-surface interactions and analysis (5 papers), Metal and Thin Film Mechanics (5 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (294 citations), Atomic and Molecular Physics, and Optics (159 citations), Condensed Matter Physics (38 citations), Computational Mechanics (44 citations) and Materials Chemistry (69 citations). Taroh Inada has collaborated with scholars based in Japan. Frequent co-authors include Tohru Hara, Tohru Nakamura, Shigekí Kato, Tadatsugu Itoh, Seiji Suzuki, Masato Nakajima, Fumiko Yano, Nobuyuki Sugii, Yutaka Kaneko and Akira Okada. Their work appears in journals such as Applied Physics Letters, Journal of The Electrochemical Society, Journal of Applied Physics, Japanese Journal of Applied Physics and IEICE Transactions on Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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