Bart Onsia

523 total citations
22 papers, 375 citations indexed

About

Bart Onsia is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Bart Onsia has authored 22 papers receiving a total of 375 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 5 papers in Biomedical Engineering and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Bart Onsia's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Copper Interconnects and Reliability (4 papers). Bart Onsia is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Copper Interconnects and Reliability (4 papers). Bart Onsia collaborates with scholars based in Belgium, United States and Germany. Bart Onsia's co-authors include Marc Heyns, Stefan De Gendt, Thierry Conard, Matty Caymax, Marc Meuris, Olivier Richard, Jan Van Steenbergen, Bert Brijs, Ivo Teerlinck and Chao Zhao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Bart Onsia

21 papers receiving 367 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bart Onsia Belgium 8 348 139 96 45 24 22 375
F. Pio Italy 11 253 0.7× 193 1.4× 48 0.5× 17 0.4× 30 1.3× 32 349
H.S. Seo South Korea 13 308 0.9× 183 1.3× 76 0.8× 15 0.3× 19 0.8× 50 398
Stephan Brunken Germany 12 317 0.9× 284 2.0× 82 0.9× 13 0.3× 10 0.4× 21 370
D. B. Aldrich United States 8 212 0.6× 127 0.9× 245 2.6× 17 0.4× 21 0.9× 18 294
Jonas Jakutis Neto Brazil 10 234 0.7× 206 1.5× 158 1.6× 30 0.7× 8 0.3× 31 370
Yuguo Tao United States 10 411 1.2× 164 1.2× 156 1.6× 54 1.2× 12 0.5× 20 441
Orla McCarthy United Kingdom 6 208 0.6× 208 1.5× 163 1.7× 17 0.4× 13 0.5× 9 343
G. Giroult-Matlakowski France 6 334 1.0× 96 0.7× 108 1.1× 36 0.8× 20 0.8× 12 354
J. Keßler France 13 439 1.3× 392 2.8× 105 1.1× 34 0.8× 22 0.9× 24 492

Countries citing papers authored by Bart Onsia

Since Specialization
Citations

This map shows the geographic impact of Bart Onsia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bart Onsia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bart Onsia more than expected).

Fields of papers citing papers by Bart Onsia

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bart Onsia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bart Onsia. The network helps show where Bart Onsia may publish in the future.

Co-authorship network of co-authors of Bart Onsia

This figure shows the co-authorship network connecting the top 25 collaborators of Bart Onsia. A scholar is included among the top collaborators of Bart Onsia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bart Onsia. Bart Onsia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, H.Y., A. Veloso, A. Lauwers, et al.. (2007). Demonstration of Low $V_{t}$ Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a $\hbox{Dy}_{2}\hbox{O}_{3}$ Cap Layer. IEEE Electron Device Letters. 28(11). 957–959. 3 indexed citations
2.
Ferain, Isabelle, Liesbeth Witters, Nadine Collaert, et al.. (2007). Metal Gate Technology using a Dy<inf>2</inf>O<inf>3</inf> Dielectric Cap Approach for multiple-V<inf>T</inf> in NMOS FinFETs. 141–142. 4 indexed citations
3.
Vos, Rita, Sophia Arnauts, Bart Onsia, et al.. (2007). Challenges with Respect to High-k/Metal Gate Stack Etching and Cleaning. ECS Transactions. 11(4). 275–283. 11 indexed citations
4.
O’Sullivan, Barry, V. Kaushik, L.-Å. Ragnarsson, et al.. (2006). Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness. IEEE Electron Device Letters. 27(7). 546–548. 14 indexed citations
5.
O’Sullivan, Barry, V. Kaushik, Lars‐Åke Ragnarsson, et al.. (2006). Cross-wafer controlled interface layer thickness variation, and its application to SiO2 / high-κ stack characterisation. HAL (Le Centre pour la Communication Scientifique Directe). 395–398.
6.
Onsia, Bart, Matty Caymax, Thierry Conard, et al.. (2005). On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 19–22. 36 indexed citations
7.
Onsia, Bart, Thierry Conard, Stefan De Gendt, et al.. (2005). A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 27–30. 67 indexed citations
8.
Elshocht, Sven Van, Bert Brijs, Matty Caymax, et al.. (2005). Surface Preparation Techniques for High-k Deposition on Ge Substrates. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 31–36. 4 indexed citations
9.
Delabie, Annelies, Riikka L. Puurunen, Bert Brijs, et al.. (2005). Atomic layer deposition of hafnium oxide on germanium substrates. Journal of Applied Physics. 97(6). 83 indexed citations
10.
Elshocht, Sven Van, Bert Brijs, Matty Caymax, et al.. (2004). Deposition of HfO2 on germanium and the impact of surface pretreatments. Applied Physics Letters. 85(17). 3824–3826. 86 indexed citations
11.
Tsai, Wei‐Bor, L.-Å. Ragnarsson, Bart Onsia, et al.. (2004). Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface. 9. 21–22. 5 indexed citations
12.
Elshocht, Sven Van, Bert Brijs, Matty Caymax, et al.. (2004). Physical characterization of HfO2 deposited on Ge substrates by MOCVD. MRS Proceedings. 809. 4 indexed citations
13.
Hellin, David, et al.. (2004). The role of TXRF in the introduction of high-k materials into IC processing. 199–211. 2 indexed citations
14.
Elshocht, Sven Van, Bert Brijs, Matty Caymax, et al.. (2004). Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD. 31–32. 1 indexed citations
15.
Caymax, Matty, H. Bender, Bert Brijs, et al.. (2003). High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies. MRS Proceedings. 765. 6 indexed citations
16.
Onsia, Bart, David Hellin, Martine Claes, et al.. (2003). Introduction of High-k Materials into Wet Processing, Analysis and Behavior. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 92. 19–22. 4 indexed citations
17.
Vos, Rita, Bernd O. Kolbesen, Marcel Lux, et al.. (2001). Single Chemistry Cleaning Solution for Advanced Wafer Cleaning. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 76-77. 119–122. 1 indexed citations
18.
Vereecke, Guy, Sophia Arnauts, Karine Kenis, et al.. (2001). Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence. Spectrochimica Acta Part B Atomic Spectroscopy. 56(11). 2321–2330. 2 indexed citations
19.
Riedel, Theran P., et al.. (2001). From Piranha to Barracuda: Mechanism of Ozone and Water Vapor Photoresist Strip in a Wet Bench. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 76-77. 227–230. 3 indexed citations
20.
Gendt, Stefan De, Bart Onsia, Sophia Arnauts, et al.. (1998). Vapor Phase Decomposition - Droplet Collection: Can we Improve the Collection Efficiency for Copper Contamination?. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 65-66. 93–96. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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