Bart Onsia

523 citations

22 papers · 375 indexed · h-index 8

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in ⓘ

Electrical and Electronic Engineering 15
- Semiconductor materials and devices 14
- Advancements in Semiconductor Devices and Circuit Design 9
- Ferroelectric and Negative Capacitance Devices 3
- Integrated Circuits and Semiconductor Failure Analysis 3
Biomedical Engineering 5
- Advanced Materials Characterization Techniques 2

Co-authors: Marc Heyns (17 shared papers)Stefan De Gendt (11 shared papers)Thierry Conard (9 shared papers)Matty Caymax (9 shared papers)Marc Meuris (6 shared papers)Jan Van Steenbergen (5 shared papers)Olivier Richard (7 shared papers)Bert Brijs (6 shared papers)
Journals: IEEE Electron Device Letters (2 papers)Applied Physics Letters (1 paper)Journal of Applied Physics (1 paper)Spectrochimica Acta Part B Atomic Spectroscopy (1 paper)Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (8 papers)
Partner nations: Belgium United States Germany

In The Last Decade

Bart Onsia

21 papers receiving 367 citations

Peers

Countries citing papers authored by Bart Onsia

Since Specialization

Citations

This map shows the geographic impact of Bart Onsia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bart Onsia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bart Onsia more than expected).

Fields of papers citing papers by Bart Onsia

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bart Onsia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bart Onsia. The network helps show where Bart Onsia may publish in the future.

Co-authors

The 25 scholars most cited alongside Bart Onsia, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bart Onsia Line = papers co-authored together Bart Onsia links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Deposition of HfO2 on germanium and the impact of surface pretreatments Applied Physics Letters ·Sven Van Elshocht, Bert Brijs, Matty Caymax, Thierry Conard, T. Chiarella, Stefan De Gendt, Brice De Jaeger, Stefan Kubicek, Marc Meuris, Bart Onsia, Olivier Richard, Ivo Teerlinck, Jan Van Steenbergen, Chao Zhao, Marc Heyns	2004	86
2	Atomic layer deposition of hafnium oxide on germanium substrates Journal of Applied Physics ·Annelies Delabie, Riikka L. Puurunen, Bert Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Olivier Richard, Wilfried Vandervorst, Chao Zhao, Marc Heyns, Marc Meuris, M. Viitanen, Hidde H. Brongersma, M. de Ridder, Lyudmila V. Goncharova, Eric Garfunkel, Torgny Gustafsson, Wilman Tsai	2005	83
3	A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Bart Onsia, Thierry Conard, Stefan De Gendt, Marc Heyns, I. Hoflijk, Paul Mertens, Marc Meuris, G. Raskin, Sonja Sioncke, Ivo Teerlinck, Antoon Theuwis, Jan Van Steenbergen, Chris Vinckier	2005	67
4	On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Bart Onsia, Matty Caymax, Thierry Conard, Stefan De Gendt, Florimond De Smedt, Annelies Delabie, Christiane Gottschalk, Marc Heyns, M. Green, Shide Lin, Paul Mertens, Wu‐ting Tsai, Chris Vinckier	2005	36
5	Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs Wu‐ting Tsai, L.-Å. Ragnarsson, L. Pantisano, P.J. Chen, Bart Onsia, T. Schram, E. Cartier, A. Kerber, Edward Young, Matty Caymax, Stefan De Gendt, Marc Heyns	2004	28
6	Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness IEEE Electron Device Letters ·Barry O’Sullivan, V. Kaushik, L.-Å. Ragnarsson, Bart Onsia, N. Van Hoornick, E. Röhr, S. DeGendt, Marc Heyns	2006	14
7	Challenges with Respect to High-k/Metal Gate Stack Etching and Cleaning ECS Transactions ·Rita Vos, Sophia Arnauts, Inge Bovie, Bart Onsia, Sylvain Garaud, Kaidong Xu, Yu Hongyu, Stefan Kubicek, E. Röhr, T. Schram, A. Veloso, Thierry Conard, Leonardus H. A. Leunissen, P. Mertens	2007	11
8	Vapor Phase Decomposition - Droplet Collection: Can we Improve the Collection Efficiency for Copper Contamination? Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Stefan De Gendt, Arthur Huber, Bart Onsia, Sophia Arnauts, Karine Kenis, D. Martin Knotter, Paul Mertens, Marc Heyns	1998	7
9	High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies MRS Proceedings ·Matty Caymax, H. Bender, Bert Brijs, Thierry Conard, S. DeGendt, Annelies Delabie, Marc Heyns, Bart Onsia, L.-Å. Ragnarsson, Olivier Richard, Wilfried Vandervorst, Sven Van Elshocht, Chao Zhao, Jan Willem Maes, L. Daté, D. Pique, Edward Young, Wei‐Bor Tsai, Y. Shimamoto	2003	6
10	Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface Wei‐Bor Tsai, L.-Å. Ragnarsson, P.J. Chen, Bart Onsia, R.J. Carter, E. Cartier, Edward Young, M. Green, Matty Caymax, Stefan De Gendt, Marc Heyns	2004	5
11	Physical characterization of HfO₂ deposited on Ge substrates by MOCVD MRS Proceedings ·Sven Van Elshocht, Bert Brijs, Matty Caymax, Thierry Conard, Stefan De Gendt, Stefan Kubicek, Marc Meuris, Bart Onsia, Olivier Richard, Ivo Teerlinck, Jan Van Steenbergen, Chao Zhao, Marc Heyns	2004	4
12	Surface Preparation Techniques for High-k Deposition on Ge Substrates Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Sven Van Elshocht, A. Delabie, Bert Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Riikka L. Puurunen, Olivier Richard, Jan Van Steenbergen, Chao Zhao, Marc Meuris, Marc Heyns	2005	4
13	Introduction of High-k Materials into Wet Processing, Analysis and Behavior Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Bart Onsia, David Hellin, Martine Claes, Ashley Maes, Stefan De Gendt, Marc Heyns	2003	4
14	Metal Gate Technology using a Dy<inf>2</inf>O<inf>3</inf> Dielectric Cap Approach for multiple-V<inf>T</inf> in NMOS FinFETs Isabelle Ferain, N.J. Son, Liesbeth Witters, Nadine Collaert, Bart Onsia, B. Kaczer, T. Kauerauf, Christoph Adelmann, Paola Favia, Olivier Richard, H. Bender, Sven Van Elshocht, P. Lehnen, K.T. San, K. De Meyer, S. Biesemans, M. Jurczak	2007	4
15	Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Rita Vos, Marcel Lux, Sophia Arnauts, Karine Kenis, M. Maes, Bart Onsia, James Snow, Frank Holsteyns, Guy Vereecke, Paul Mertens, Marc Heyns, O. Doll, A. Fester, Bernd O. Kolbesen, T. L. Hackett, Mark Hoffman	2003	4
16	From Piranha to Barracuda: Mechanism of Ozone and Water Vapor Photoresist Strip in a Wet Bench Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Theran P. Riedel, K. Wolke, Stefan De Gendt, Bart Onsia	2001	3
17	Demonstration of Low $V_{t}$ Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a $\hbox{Dy}_{2}\hbox{O}_{3}$ Cap Layer IEEE Electron Device Letters ·H.Y. Yu, S.Z. Chang, A. Veloso, A. Lauwers, Christoph Adelmann, Bart Onsia, P. Lehnen, T. Kauerauf, S. Brus, K. M. Yin, P. Absil, S. Biesemans	2007	3
18	Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence Spectrochimica Acta Part B Atomic Spectroscopy ·Guy Vereecke, Sophia Arnauts, Patrick Van Doorne, Karine Kenis, Bart Onsia, K. Verstraeten, Marc Schaekers, J.A.B. Van Hoeymissen, Marc Heyns	2001	2
19	The role of TXRF in the introduction of high-k materials into IC processing David Hellin, Bart Onsia, Annelies Delabie, Stefan De Gendt, Christiaan Vinckier	2004	2
20	Single Chemistry Cleaning Solution for Advanced Wafer Cleaning Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Rita Vos, O. Doll, A. Fester, Bernd O. Kolbesen, Marcel Lux, Karine Kenis, Bart Onsia, S. De Gendt, E. Schellkes, Z Hatcher, Paul Mertens, Marc Heyns	2001	1

About Bart Onsia

Bart Onsia is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films, having authored 22 papers that have together received 375 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Copper Interconnects and Reliability (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers), Semiconductor materials and interfaces (3 papers), Electron and X-Ray Spectroscopy Techniques (2 papers) and Advanced Materials Characterization Techniques (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (348 citations), Atomic and Molecular Physics, and Optics (96 citations), Materials Chemistry (139 citations), Surfaces, Coatings and Films (15 citations) and Radiation (12 citations). Bart Onsia has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include Marc Heyns, Stefan De Gendt, Thierry Conard, Matty Caymax, Marc Meuris, Jan Van Steenbergen, Olivier Richard, Bert Brijs, Ivo Teerlinck and Chao Zhao. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics, Spectrochimica Acta Part B Atomic Spectroscopy and Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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