Akio Shima

992 citations

92 papers · 763 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Structural Biology

Papers in

Electrical and Electronic Engineering 89
- Silicon Carbide Semiconductor Technologies 65
- Semiconductor materials and devices 58
- Advancements in Semiconductor Devices and Circuit Design 34
- Electromagnetic Compatibility and Noise Suppression 20
- Integrated Circuits and Semiconductor Failure Analysis 16
- Silicon and Solar Cell Technologies 13
- Multilevel Inverters and Converters 7
Structural Biology 2

Co-authors: Atsushi Hiraiwa Yuki Mori Yasuhiro Shimamoto Naoki Watanabe Shintaroh Sato Renichi Yamada Naoki Tega Toshiyuki Mine
Journals: Japanese Journal of Applied Physics (16 papers)IEEE Transactions on Electron Devices (13 papers)Journal of Applied Physics (4 papers)Materials science forum (19 papers)IEEE Electron Device Letters (1 paper)
Partner nations: Japan United Kingdom Italy

In The Last Decade

Akio Shima

84 papers receiving 728 citations

Peers

Countries citing papers authored by Akio Shima

Since Specialization

Citations

This map shows the geographic impact of Akio Shima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Akio Shima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Akio Shima more than expected).

Fields of papers citing papers by Akio Shima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Akio Shima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Akio Shima. The network helps show where Akio Shima may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Akio Shima, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Akio Shima Line = papers co-authored together Akio Shima links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Modeling of SiC(0001) n-Channel MOSFETs Based on Comprehensive Understanding of Electron Scattering Mechanism IEEE Transactions on Electron Devices ·Nneka Breaux, R. Mateu Estivill, Rafael Santos Correia, Akio Shima, S.M. Aldoshin, Mitsuaki Kaneko, Tsunenobu Kimoto	2025	0
2	Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001) Japanese Journal of Applied Physics ·Waraparyana Waraparyana, J. M. O' DONNELL, Akio Shima, Koji Kita	2024	0
3	Development of Wide-JFET Trench-Etched Double-Diffused MOS (TED-MOS) for High-Voltage Applications IEEE Transactions on Electron Devices ·Rafael Santos Correia, Christine Hsiaoyun Chung, Yuki Mori, AJAI KAUL, Akio Shima	2024	2
4	Circuit Simulation Model with Design Parameters for SiC-MOSFET Rafael Santos Correia, Catalin Agheorghiesei, Yuki Mori, Akio Shima	2024	0
5	Vertical-Channel Fin-SiC (VC Fin-SiC) With Partially Highly Doped JFET for 3.3-kV Applications IEEE Transactions on Electron Devices ·Christine Hsiaoyun Chung, Rafael Santos Correia, F. G. Pohland, Yuki Mori, AJAI KAUL, Yasunori Tanaka, Akio Shima	2024	0
6	Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout IEEE Transactions on Electron Devices ·F. G. Pohland, Hiroyuki Okino, Catalin Agheorghiesei, Akio Shima	2023	4
7	Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET Waraparyana Waraparyana, J. M. O' DONNELL, Akio Shima, Koji Kita	2023	1
8	Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs AIP Advances ·Leyla Sophia, Leroy Garley, Keisuke Kobayashi, Akio Yoneyama, M.R. Garsivaz jazi, Hiroyuki Okino, Akio Shima, Toru Ujihara	2022	12
9	Thin-drift-layer n-channel 4H-SiC IGBT with low switching loss and switching ringing reduction Japanese Journal of Applied Physics ·Naoki Watanabe, Zhili Zhao, Yuki Mori, Akio Shima	2022	3
10	In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations Journal of Applied Physics ·Leyla Sophia, Leroy Garley, Keisuke Kobayashi, Akio Yoneyama, M.R. Garsivaz jazi, Hiroyuki Okino, Akio Shima, Toru Ujihara	2021	10
11	Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes Japanese Journal of Applied Physics ·Matteo Lenge, Yuki Mori, Akio Shima, Noriyuki Iwamuro	2020	2
12	Design of a DC-DC Converter using SiC Trench MOSFETs for EV Fast Chargers IRIS Research product catalog (Sapienza University of Rome) ·Laszlo Littmann, Takayuki Uchida, Chatchanan Ausavarungnirun, Yuki Mori, Akio Shima, Giulio De Donato	2020	2
13	4H-SiC CMOS Transimpedance Amplifier of Gamma-Irradiation Resistance Over 1 MGy IEEE Transactions on Electron Devices ·J. M. O' DONNELL, Shintaroh Sato, M. Meissner, Nobuyuki Sugii, Akio Shima	2019	26
14	Comparison of Extremely High-Temperature Characteristics of Planar and Three- Dimensional SiC MOSFETs IEEE Electron Device Letters ·Naoki Tega, Shintaroh Sato, Akio Shima	2019	18
15	The Performance of Operational Amplifiers Consisting of 4H-SiC CMOS After Gamma Irradiation IEEE Transactions on Electron Devices ·J. M. O' DONNELL, Shintaroh Sato, Akio Shima, M. Meissner	2018	13
16	Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area IEEE Transactions on Electron Devices ·Leroy Garley, L.G. Stroemberg, Leyla Sophia, Akio Shima	2018	22
17	Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress IEEE Transactions on Electron Devices ·Matteo Lenge, Renichi Yamada, Akio Shima	2018	19
18	Freewheeling Diode-Less SiC-Inverter with Fast Short-Circuit Protection for Industrial Applications Takashi Ishigaki, Hiroshi Kageyama, Akio Shima, Digh Hisamoto, G. Crespi Reghizzi, Yasushi Sasaki, Sergey Romaev	2015	9
19	Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking IEICE Technical Report; IEICE Tech. Rep. ·Y. Sasago, Samira Museli, Hiroyuki Minemura, 良夫岡田, M. Tai, 李苏霞, S. Morita, Toshikazu Takahashi, Virgínia Brás Gomes, Pélagie Murebwayire, Alonzo Perez Mendez, Akio Shima, W.W. Wang	2011	1
20	Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput Symposium on VLSI Technology ·Y. Sasago, M. Kinoshita, Hiroyuki Minemura, 良夫岡田, M. Tai, 李苏霞, B. A. Nurmatov, Tsuyoshi Takahashi, T. Takahama, T. Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi	2011	12

About Akio Shima

Akio Shima is a scholar working on Electrical and Electronic Engineering, Structural Biology, Radiation, Atomic and Molecular Physics, and Optics and Computational Mechanics, having authored 92 papers that have together received 763 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (65 papers), Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers), Electromagnetic Compatibility and Noise Suppression (20 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Silicon and Solar Cell Technologies (13 papers), Semiconductor materials and interfaces (7 papers) and Multilevel Inverters and Converters (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (715 citations), Structural Biology (6 citations), Atomic and Molecular Physics, and Optics (109 citations), Ceramics and Composites (19 citations) and Materials Chemistry (103 citations). Akio Shima has collaborated with scholars based in Japan, United Kingdom and Italy. Frequent co-authors include Atsushi Hiraiwa, Yuki Mori, Yasuhiro Shimamoto, Naoki Watanabe, Shintaroh Sato, Renichi Yamada, Naoki Tega, Toshiyuki Mine, Takahiro Morikawa and Digh Hisamoto. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of Applied Physics, Materials science forum and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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