J.L. Leray

1.7k citations

66 papers · 1.2k · h-index 22

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
Ceramics and Composites top 10%
- Glass properties and applications

Papers in

Electrical and Electronic Engineering 60
- Semiconductor materials and devices 42
- Advancements in Semiconductor Devices and Circuit Design 31
- Radiation Effects in Electronics 30
- Integrated Circuits and Semiconductor Failure Analysis 18
Materials Chemistry 12
- Graphite, nuclear technology, radiation studies 5
- Silicon Nanostructures and Photoluminescence 4

Co-authors: O. Musseau (26 shared papers)Philippe Paillet (13 shared papers)V. Ferlet-Cavrois (13 shared papers)O. Flament (18 shared papers)Yves‐Marie Coïc (11 shared papers)R. A. B. Devine (7 shared papers)P. Paillet (9 shared papers)M.R. Shaneyfelt (4 shared papers)
Journals: IEEE Transactions on Nuclear Science (38 papers)IEEE Electron Device Letters (2 papers)Journal of Applied Physics (2 papers)Journal of Non-Crystalline Solids (2 papers)Microelectronics Reliability (2 papers)
Partner nations: France United States Italy

In The Last Decade

J.L. Leray

65 papers receiving 1.2k citations

Peers

Countries citing papers authored by J.L. Leray

Since Specialization

Citations

This map shows the geographic impact of J.L. Leray's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Leray with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Leray more than expected).

Fields of papers citing papers by J.L. Leray

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Leray. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Leray. The network helps show where J.L. Leray may publish in the future.

Co-authors

The 25 scholars most cited alongside J.L. Leray, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.L. Leray Line = papers co-authored together J.L. Leray links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Worst-case bias during total dose irradiation of SOI transistors IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, T. Colladant, Philippe Paillet, J.L. Leray, O. Musseau, J.R. Schwank, M.R. Shaneyfelt, J.L. Pelloie, J. du Port de Poncharra	2000	112
2	Impact of ion energy on single-event upset IEEE Transactions on Nuclear Science ·P.E. Dodd, O. Musseau, M.R. Shaneyfelt, F.W. Sexton, C. D'hose, G.L. Hash, M. Martinez, R.A. Loemker, J.L. Leray, P.S. Winokur	1998	75
3	CMOS/SOI hardening at 100 Mrad (SiO/sub 2/) IEEE Transactions on Nuclear Science ·J.L. Leray, E. Dupont-Nivet, J.F. Pere, Yves‐Marie Coïc, Marco Raffaelli, A.J. Auberton‐Hervé, M. Bruel, B. Giffard, J. Margail	1990	54
4	Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures Journal of Applied Physics ·R. A. B. Devine, W. L. Warren, Jianbin Xu, I. H. Wilson, P. Paillet, J.L. Leray	1995	52
5	Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides IEEE Transactions on Nuclear Science ·J.R. Schwank, M.R. Shaneyfelt, P.E. Dodd, V. Ferlet-Cavrois, R.A. Loemker, P.S. Winokur, Daniel M. Fleetwood, Philippe Paillet, J.L. Leray, B.L. Draper, S.C. Witczak, L.C. Riewe	2000	51
6	Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems Microelectronics Reliability ·J.L. Leray	2007	48
7	From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena IEEE Transactions on Nuclear Science ·J.L. Leray, E. Dupont-Nivet, O. Musseau, Yves‐Marie Coïc, A. Umbert, P. Lalande, J.F. Pere, A.J. Auberton‐Hervé, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Truche, F. Martín	1988	46
8	Total dose induced latch in short channel NMOS/SOI transistors IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, Sébastien Quoizola, O. Musseau, O. Flament, J.L. Leray, J.L. Pelloie, C. Raynaud, O. Faynot	1998	46
9	A study of radiation vulnerability of ferroelectric material and devices IEEE Transactions on Nuclear Science ·Yves‐Marie Coïc, O. Musseau, J.L. Leray	1994	44
10	Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge IEEE Transactions on Nuclear Science ·Daniel M. Fleetwood, P.S. Winokur, M.R. Shaneyfelt, L.C. Riewe, O. Flament, Philippe Paillet, J.L. Leray	1998	44
11	Evidence of negative charge trapping in high temperature annealed thermal oxide IEEE Transactions on Nuclear Science ·Philippe Paillet, Dominique Hervé, J.L. Leray, R. A. B. Devine	1994	39
12	Radiation-induced effects in a new class of optical waveguides: the air-guiding photonic crystal fibers IEEE Transactions on Nuclear Science ·Sylvain Girard, J. Baggio, J.L. Leray	2005	36
13	Comparative study of radiation-induced electrical and spin active defects in buried SiO2 layers Journal of Applied Physics ·Dominique Hervé, J.L. Leray, R. A. B. Devine	1992	34
14	Vulnerability analysis of optical fibers for laser megajoule facility: preliminary studies IEEE Transactions on Nuclear Science ·Stéphane Girard, J. Baggio, J.L. Leray, J.-P. Meunier, A. Boukenter, Y. Ouerdane	2005	33
15	SEU in SOI SRAMs-a static model IEEE Transactions on Nuclear Science ·O. Musseau, J.L. Leray, V. Ferlet-Cavrois, Yves‐Marie Coïc, B. Giffard	1994	30
16	Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study IEEE Transactions on Nuclear Science ·Jean‐Luc Autran, C. Chabrerie, P. Paillet, O. Flament, J.L. Leray, Jean-Claude Boudenot	1996	30
17	Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor IEEE Transactions on Electron Devices ·V. Ferlet-Cavrois, O. Musseau, J.L. Leray, J.L. Pelloie, C. Raynaud	1997	26
18	14 MeV neutron-induced SEU in SRAM devices IEEE Transactions on Nuclear Science ·O. Flament, J. Baggio, C. D'hose, Gilles Gasiot, J.L. Leray	2004	25
19	The role of electron transport and trapping in MOS total-dose modeling IEEE Transactions on Nuclear Science ·Daniel M. Fleetwood, P.S. Winokur, L.C. Riewe, O. Flament, P. Paillet, J.L. Leray	1999	25
20	Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code IEEE Transactions on Nuclear Science ·J.L. Leray, Philippe Paillet, V. Ferlet-Cavrois, C. Tavernier, K. Belhaddad, O. Penzin	2000	21

About J.L. Leray

J.L. Leray is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Radiation, Nuclear and High Energy Physics and Atomic and Molecular Physics, and Optics, having authored 66 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers), Radiation Effects in Electronics (30 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Graphite, nuclear technology, radiation studies (5 papers), Radiation Detection and Scintillator Technologies (4 papers), Silicon Nanostructures and Photoluminescence (4 papers) and VLSI and Analog Circuit Testing (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Ceramics and Composites (65 citations), Hardware and Architecture (76 citations), Radiation (58 citations) and Materials Chemistry (190 citations). J.L. Leray has collaborated with scholars based in France, United States and Italy. Frequent co-authors include O. Musseau, Philippe Paillet, V. Ferlet-Cavrois, O. Flament, Yves‐Marie Coïc, R. A. B. Devine, P. Paillet, M.R. Shaneyfelt, Dominique Hervé and P.S. Winokur. Their work appears in journals such as IEEE Transactions on Nuclear Science, IEEE Electron Device Letters, Journal of Applied Physics, Journal of Non-Crystalline Solids and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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