J.L. Leray

1.7k total citations
66 papers, 1.2k citations indexed

About

J.L. Leray is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Radiation. According to data from OpenAlex, J.L. Leray has authored 66 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 8 papers in Radiation. Recurrent topics in J.L. Leray's work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Radiation Effects in Electronics (30 papers). J.L. Leray is often cited by papers focused on Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Radiation Effects in Electronics (30 papers). J.L. Leray collaborates with scholars based in France, United States and Italy. J.L. Leray's co-authors include O. Musseau, Philippe Paillet, V. Ferlet-Cavrois, Yves‐Marie Coïc, O. Flament, R. A. B. Devine, P. Paillet, M.R. Shaneyfelt, Dominique Hervé and P.S. Winokur and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J.L. Leray

65 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.L. Leray France 22 1.1k 190 77 76 65 66 1.2k
R.K. Lawrence United States 16 771 0.7× 138 0.7× 50 0.6× 96 1.3× 21 0.3× 52 800
Arto Javanainen Finland 21 1.3k 1.1× 76 0.4× 76 1.0× 101 1.3× 17 0.3× 69 1.4k
James R. Schwank United States 17 1.6k 1.4× 128 0.7× 37 0.5× 242 3.2× 10 0.2× 50 1.6k
S. Girard France 14 429 0.4× 105 0.6× 150 1.9× 22 0.3× 169 2.6× 39 538
T. A. Dellin United States 12 322 0.3× 96 0.5× 50 0.6× 17 0.2× 33 0.5× 19 459
James Oberschmidt United States 12 220 0.2× 190 1.0× 41 0.5× 12 0.2× 27 0.4× 34 446
Toshio Hirao Japan 14 627 0.6× 57 0.3× 62 0.8× 56 0.7× 3 0.0× 68 695
D.J. Fitzgerald United States 12 1.1k 0.9× 141 0.7× 300 3.9× 9 0.1× 8 0.1× 43 1.2k
O. Flament France 20 989 0.9× 50 0.3× 18 0.2× 121 1.6× 5 0.1× 61 1.0k
Árpád Barna Hungary 10 145 0.1× 118 0.6× 101 1.3× 7 0.1× 17 0.3× 37 349

Countries citing papers authored by J.L. Leray

Since Specialization
Citations

This map shows the geographic impact of J.L. Leray's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Leray with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Leray more than expected).

Fields of papers citing papers by J.L. Leray

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Leray. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Leray. The network helps show where J.L. Leray may publish in the future.

Co-authorship network of co-authors of J.L. Leray

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Leray. A scholar is included among the top collaborators of J.L. Leray based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Leray. J.L. Leray is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Leray, J.L., et al.. (2015). TID Response of Various Field Programmable Gate Arrays and Memory Devices. HAL (Le Centre pour la Communication Scientifique Directe). 33. 1–4. 4 indexed citations
2.
3.
Leray, J.L., et al.. (2012). Prompt and Delayed Parasitic Currents Induced in Typical Insulators of Coaxial Cables by Large 14 MeV Sub-Nanosecond Neutrons Flux. IEEE Transactions on Nuclear Science. 59(4). 1289–1295. 1 indexed citations
4.
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6.
Ferlet-Cavrois, V., et al.. (2005). Comparison of the Sensitivity to Heavy Ions of Sram in Different Simox Technologies. 60–61. 4 indexed citations
7.
Flament, O., et al.. (2004). 14 MeV Neutron-Induced SEU in SRAM Devices. ESASP. 536. 649. 1 indexed citations
8.
Flament, O., et al.. (2004). 14 MeV neutron-induced SEU in SRAM devices. IEEE Transactions on Nuclear Science. 51(5). 2908–2911. 25 indexed citations
9.
Leray, J.L., J. Baggio, V. Ferlet-Cavrois, & O. Flament. (2004). Atmospheric neutron effects in advanced microelectronics, standards and applications. 311–321. 6 indexed citations
10.
Ferlet-Cavrois, V., et al.. (2002). Transient radiation effects in CMOS/SOI transistors and circuits. 360–365. 5 indexed citations
11.
Leray, J.L., et al.. (2000). Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code. IEEE Transactions on Nuclear Science. 47(3). 620–626. 21 indexed citations
12.
Fleetwood, Daniel M., P.S. Winokur, L.C. Riewe, et al.. (1999). The role of electron transport and trapping in MOS total-dose modeling. IEEE Transactions on Nuclear Science. 46(6). 1519–1525. 25 indexed citations
13.
Flament, O., Jean‐Luc Autran, P. Roche, et al.. (1996). Enhanced total dose damage in junction field effect transistors and related linear integrated circuits. IEEE Transactions on Nuclear Science. 43(6). 3060–3067. 18 indexed citations
14.
Baggio, J., et al.. (1996). Electrical and optical response of a laser diode to transient ionizing radiation. IEEE Transactions on Nuclear Science. 43(3). 1038–1043. 2 indexed citations
15.
Martini, M., F. Meinardi, E. Rosetta, et al.. (1996). Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides. IEEE Transactions on Nuclear Science. 43(3). 845–850. 6 indexed citations
16.
Leray, J.L.. (1995). Buried oxides: where we have been and where we are going. Journal of Non-Crystalline Solids. 187. 10–22. 6 indexed citations
17.
Paillet, Philippe, Dominique Hervé, J.L. Leray, & R. A. B. Devine. (1994). Evidence of negative charge trapping in high temperature annealed thermal oxide. IEEE Transactions on Nuclear Science. 41(3). 473–478. 39 indexed citations
18.
Coïc, Yves‐Marie, O. Musseau, & J.L. Leray. (1994). A study of radiation vulnerability of ferroelectric material and devices. IEEE Transactions on Nuclear Science. 41(3). 495–502. 44 indexed citations
19.
Flament, O., J.L. Leray, Juliette Martin, et al.. (1994). Radiation effects on SOI analog devices parameters. IEEE Transactions on Nuclear Science. 41(3). 565–571. 9 indexed citations
20.
Leray, J.L.. (1988). Assessments of SOI technologies for hardening. Microelectronic Engineering. 8(3-4). 187–200. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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