J.V. Osborn

943 total citations
22 papers, 626 citations indexed

About

J.V. Osborn is a scholar working on Electrical and Electronic Engineering, Radiation and Hardware and Architecture. According to data from OpenAlex, J.V. Osborn has authored 22 papers receiving a total of 626 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 2 papers in Radiation and 2 papers in Hardware and Architecture. Recurrent topics in J.V. Osborn's work include Semiconductor materials and devices (14 papers), Radiation Effects in Electronics (13 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). J.V. Osborn is often cited by papers focused on Semiconductor materials and devices (14 papers), Radiation Effects in Electronics (13 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). J.V. Osborn collaborates with scholars based in United States and Canada. J.V. Osborn's co-authors include R.C. Lacoe, D.C. Mayer, Stephanie Brown, R. Koga, B. M. Johnson, A. L. Vampola, S.C. Witczak, E. E. King, J. H. Elder and W. A. Kolasinski and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Nuclear Science and Journal of Microelectromechanical Systems.

In The Last Decade

J.V. Osborn

22 papers receiving 582 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.V. Osborn United States 14 530 111 76 38 28 22 626
Scott M. Dalton United States 12 479 0.9× 47 0.4× 3 0.0× 36 0.9× 35 1.3× 31 517
S. Kavadias Greece 10 466 0.9× 9 0.1× 15 0.2× 34 0.9× 9 0.3× 28 524
F. Bedeschi Italy 11 222 0.4× 53 0.5× 5 0.1× 4 0.1× 165 5.9× 40 370
Daniel Foty United States 14 544 1.0× 49 0.4× 7 0.1× 15 0.4× 34 1.2× 39 614
Guy Meynants Belgium 10 433 0.8× 6 0.1× 11 0.1× 44 1.2× 9 0.3× 39 518
A. C. Abusleme Hoffman Chile 11 416 0.8× 8 0.1× 19 0.3× 111 2.9× 95 3.4× 37 624
M. Ritter United States 10 650 1.2× 9 0.1× 18 0.2× 20 0.5× 48 1.7× 25 735
Isao Takayanagi Japan 13 361 0.7× 3 0.0× 15 0.2× 63 1.7× 5 0.2× 36 423
Jan Bogaerts Belgium 11 518 1.0× 5 0.0× 12 0.2× 45 1.2× 24 0.9× 28 600
Sven Frohmann Germany 10 154 0.3× 48 0.4× 26 0.3× 19 0.5× 27 1.0× 36 293

Countries citing papers authored by J.V. Osborn

Since Specialization
Citations

This map shows the geographic impact of J.V. Osborn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.V. Osborn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.V. Osborn more than expected).

Fields of papers citing papers by J.V. Osborn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.V. Osborn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.V. Osborn. The network helps show where J.V. Osborn may publish in the future.

Co-authorship network of co-authors of J.V. Osborn

This figure shows the co-authorship network connecting the top 25 collaborators of J.V. Osborn. A scholar is included among the top collaborators of J.V. Osborn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.V. Osborn. J.V. Osborn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
DeIonno, Erica, M. D. Looper, J.V. Osborn, & James W. Palko. (2013). Displacement Damage in TiO<formula formulatype="inline"> <tex Notation="TeX">$_{2}$</tex></formula> Memristor Devices. IEEE Transactions on Nuclear Science. 60(2). 1379–1383. 27 indexed citations
2.
DeIonno, Erica, M. D. Looper, J.V. Osborn, Hugh Barnaby, & William M. Tong. (2013). Radiation effects studies on thin film TiO<inf>2</inf> memristor devices. 1–8. 16 indexed citations
3.
Tong, William M., J. Joshua Yang, Philip J. Kuekes, et al.. (2010). Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions. IEEE Transactions on Nuclear Science. 57(3). 1640–1643. 63 indexed citations
4.
Conway, Josh, J.V. Osborn, & Jesse D. Fowler. (2007). Stroboscopic Imaging Interferometer for MEMS Performance Measurement. Journal of Microelectromechanical Systems. 16(3). 668–674. 12 indexed citations
5.
Linscott, I. R., U. S. Inan, J. L. Roeder, et al.. (2006). A TID and SEE Radiation-Hardened, Wideband, Low-Noise Amplifier. IEEE Transactions on Nuclear Science. 53(6). 3439–3448. 18 indexed citations
6.
Witczak, S.C., R.C. Lacoe, J.V. Osborn, John M. Hutson, & Steven C. Moss. (2005). Dose-rate sensitivity of modern nMOSFETs. IEEE Transactions on Nuclear Science. 52(6). 2602–2608. 43 indexed citations
7.
Lacoe, R.C., J.V. Osborn, D.C. Mayer, & Stephanie Brown. (2005). Total-dose tolerance of the commercial American Microsystems Inc. (AMI) 0.35-μm CMOS process. 530. 464–468. 3 indexed citations
8.
Mayer, D.C., R.C. Lacoe, E. E. King, & J.V. Osborn. (2004). Reliability enhancement in high-performance MOSFETs by annular transistor design. IEEE Transactions on Nuclear Science. 51(6). 3615–3620. 28 indexed citations
9.
Osborn, J.V., et al.. (2004). “Chlorine-based Reactive Ion Etching Process to Pattern Platinum for MEMS Applications”. MRS Proceedings. 812. 3 indexed citations
10.
Weiller, Bruce H., Peter D. Fuqua, & J.V. Osborn. (2004). Fabrication, Characterization, and Thermal Failure Analysis of a Micro Hot Plate Chemical Sensor Substrate. Journal of The Electrochemical Society. 151(3). H59–H59. 10 indexed citations
11.
Lacoe, R.C., et al.. (2003). Total-dose tolerance of a chartered semiconductor 0.35-μm CMOS process. 82–86. 14 indexed citations
12.
Lacoe, R.C., Steven C. Moss, J.V. Osborn, et al.. (2003). Neutron and proton irradiation for latchup suppression in a radiation-tolerant commercial submicron CMOS process. 340–345. 5 indexed citations
13.
LaLumondiere, S. D., R. Koga, J.V. Osborn, et al.. (2002). Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures. IEEE Transactions on Nuclear Science. 49(6). 3059–3066. 10 indexed citations
14.
15.
Mayer, D.C., et al.. (2001). Report of the Odyssey FPGA Independent Assessment Team. 1 indexed citations
16.
Lacoe, R.C., J.V. Osborn, R. Koga, Stephanie Brown, & D.C. Mayer. (2000). Application of hardness-by-design methodology to radiation-tolerant ASIC technologies. IEEE Transactions on Nuclear Science. 47(6). 2334–2341. 120 indexed citations
17.
Osborn, J.V., et al.. (1998). Total dose hardness of three commercial CMOS microelectronics foundries. IEEE Transactions on Nuclear Science. 45(3). 1458–1463. 47 indexed citations
18.
Koga, R., W. A. Kolasinski, J.V. Osborn, J. H. Elder, & R. Chitty. (1988). SEU test techniques for 256 K static RAMs and comparisons of upsets by heavy ions and protons. IEEE Transactions on Nuclear Science. 35(6). 1638–1643. 49 indexed citations
19.
Koga, R., W. A. Kolasinski, J.V. Osborn, J. H. Elder, & R. Chitty. (1988). SEU (Single Event Upset) Test Techniques for 256k Statics RAMs and Comparisons of Upsets Induced by Heavy Ions and Protons. 11 indexed citations
20.
Song, Yu, J.S. Cable, W. A. Kolasinski, et al.. (1988). Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K*1 NMOS SRAMs. IEEE Transactions on Nuclear Science. 35(6). 1673–1677. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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