Yongkun Sin

490 total citations
73 papers, 389 citations indexed

About

Yongkun Sin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Yongkun Sin has authored 73 papers receiving a total of 389 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 51 papers in Atomic and Molecular Physics, and Optics and 17 papers in Condensed Matter Physics. Recurrent topics in Yongkun Sin's work include Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (25 papers) and GaN-based semiconductor devices and materials (17 papers). Yongkun Sin is often cited by papers focused on Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (25 papers) and GaN-based semiconductor devices and materials (17 papers). Yongkun Sin collaborates with scholars based in United States, South Korea and Hong Kong. Yongkun Sin's co-authors include Steven C. Moss, Nathan Presser, Brendan Foran, Zachary Lingley, William T. Lotshaw, L. J. Mawst, T. F. Kuech, Stephen LaLumondiere, S. D. LaLumondiere and Jesús A. del Alamo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Yongkun Sin

67 papers receiving 365 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yongkun Sin United States 12 351 249 68 62 49 73 389
Martin Hempel Germany 14 390 1.1× 322 1.3× 79 1.2× 94 1.5× 34 0.7× 49 478
N. Michel France 12 363 1.0× 230 0.9× 127 1.9× 26 0.4× 19 0.4× 57 404
Armin Liero Germany 14 468 1.3× 325 1.3× 129 1.9× 23 0.4× 31 0.6× 57 520
Mark DeVito United States 13 431 1.2× 246 1.0× 34 0.5× 31 0.5× 18 0.4× 52 485
K. Wakao Japan 14 495 1.4× 363 1.5× 28 0.4× 27 0.4× 18 0.4× 57 528
J. Sebastian Germany 13 580 1.7× 358 1.4× 28 0.4× 42 0.7× 31 0.6× 68 625
R. T. Carline United Kingdom 12 367 1.0× 275 1.1× 26 0.4× 59 1.0× 52 1.1× 40 459
G. Beister Germany 11 402 1.1× 270 1.1× 24 0.4× 21 0.3× 17 0.3× 36 441
C.T. Harris United States 12 434 1.2× 266 1.1× 18 0.3× 21 0.3× 51 1.0× 25 498
S. Isozumi Japan 12 282 0.8× 295 1.2× 34 0.5× 29 0.5× 18 0.4× 24 359

Countries citing papers authored by Yongkun Sin

Since Specialization
Citations

This map shows the geographic impact of Yongkun Sin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yongkun Sin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yongkun Sin more than expected).

Fields of papers citing papers by Yongkun Sin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yongkun Sin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yongkun Sin. The network helps show where Yongkun Sin may publish in the future.

Co-authorship network of co-authors of Yongkun Sin

This figure shows the co-authorship network connecting the top 25 collaborators of Yongkun Sin. A scholar is included among the top collaborators of Yongkun Sin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yongkun Sin. Yongkun Sin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sin, Yongkun, Andrew C. Hall, Emily Tang, et al.. (2025). Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs. physica status solidi (a). 222(23). 1 indexed citations
2.
Sin, Yongkun, et al.. (2025). Micro- and macroscopic analysis of degradation in high-power broad-area QW and QD lasers. 43–43. 1 indexed citations
5.
Sin, Yongkun, Zachary Lingley, Jeremy Kirch, et al.. (2019). Catastrophic Degradation in High-Power Buried Heterostructure Quantum Cascade Lasers. Conference on Lasers and Electro-Optics. 1 indexed citations
6.
Sin, Yongkun, Zachary Lingley, Jeremy Kirch, et al.. (2019). Catastrophic Degradation in High-Power Buried Heterostructure Quantum Cascade Lasers. Conference on Lasers and Electro-Optics. SW3N.3–SW3N.3. 3 indexed citations
7.
Kim, Honghyuk, Bei Shi, Zachary Lingley, et al.. (2019). Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express. 27(23). 33205–33205. 6 indexed citations
8.
Kim, Honghyuk, Zachary Lingley, Yongkun Sin, et al.. (2017). Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning. Journal of Crystal Growth. 465. 48–54. 10 indexed citations
9.
Kim, TaeWan, Honghyuk Kim, Youngjo Kim, et al.. (2016). Impact of Sb Incorporation on MOVPE-Grown “Bulk” InGaAs(Sb)N Films for Solar Cell Application. IEEE Journal of Photovoltaics. 6(6). 1673–1677. 5 indexed citations
10.
Sin, Yongkun, Stephen LaLumondiere, Nathan P. Wells, et al.. (2014). Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells. MRS Proceedings. 1635. 55–62.
11.
Schulte, Kevin L., Tae Wan Kim, L. J. Mawst, et al.. (2013). Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy. Journal of Electronic Materials. 43(4). 873–878. 2 indexed citations
12.
Sin, Yongkun, Stephen LaLumondiere, Brendan Foran, William T. Lotshaw, & Steven C. Moss. (2013). Catastrophic optical bulk damage (COBD) processes in aged and proton-irradiated high power InGaAs-AlGaAs strained quantum well lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8605. 86050M–86050M. 4 indexed citations
13.
Forghani, Kamran, L. J. Mawst, T. F. Kuech, et al.. (2013). Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration. Journal of Crystal Growth. 393. 70–74. 22 indexed citations
14.
Kim, Tae‐Wan, Kangho Kim, Jaejin Lee, et al.. (2012). Characteristics of bulk InGaAsN and InGaAsSbN material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8256. 82561D–82561D. 8 indexed citations
15.
Cardoza, David, S. D. LaLumondiere, S.C. Witczak, et al.. (2012). Single Event Transients Induced by Picosecond Pulsed X-Ray Absorption in III&#x2013;V<newline/> Heterojunction Transistors. IEEE Transactions on Nuclear Science. 59(6). 2729–2738. 17 indexed citations
16.
Kirch, Jeremy, L. J. Mawst, T. F. Kuech, et al.. (2011). Characteristics of step-graded In x Ga 1−x As and InGaP y Sb 1−y metamorphic buffer layers on GaAs substrates. 1–4.
17.
Sin, Yongkun, et al.. (2011). Catastrophic optical bulk damage (COBD) in high power multi-mode InGaAs-AlGaAs strained quantum well lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7918. 791803–791803. 16 indexed citations
18.
Sin, Yongkun, et al.. (2007). Reliability and failure-mode investigation of high-power multimode InGaAs strained quantum well single emitters. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6456. 645605–645605. 3 indexed citations
19.
Sin, Yongkun, et al.. (2006). Characteristics and reliability of high power multi-mode InGaAs strained quantum well single emitters with CW output powers of over 5W. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6104. 61040H–61040H. 2 indexed citations
20.
Lee, Jaehyun, et al.. (2002). Fabrication of planar InP/InGaAs avalanche photodiode without guard rings. 2. 332–333. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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