A. Michez

700 total citations
39 papers, 499 citations indexed

About

A. Michez is a scholar working on Electrical and Electronic Engineering, Astronomy and Astrophysics and Materials Chemistry. According to data from OpenAlex, A. Michez has authored 39 papers receiving a total of 499 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 3 papers in Astronomy and Astrophysics and 3 papers in Materials Chemistry. Recurrent topics in A. Michez's work include Radiation Effects in Electronics (24 papers), Semiconductor materials and devices (23 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). A. Michez is often cited by papers focused on Radiation Effects in Electronics (24 papers), Semiconductor materials and devices (23 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). A. Michez collaborates with scholars based in France, Switzerland and Finland. A. Michez's co-authors include C.R. Cirba, S.C. Witczak, Ronald D. Schrimpf, Daniel M. Fleetwood, Sergey N. Rashkeev, Sokrates T. Pantelides, J. Boch, Antoine Touboul, Frédéric Saigné and G. Bordure and has published in prestigious journals such as SHILAP Revista de lepidopterología, Sensors and Actuators A Physical and Electronics Letters.

In The Last Decade

A. Michez

34 papers receiving 465 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Michez France 11 468 37 25 20 14 39 499
S.L. Kosier United States 11 804 1.7× 48 1.3× 29 1.2× 14 0.7× 27 1.9× 31 810
Chengfa He China 10 188 0.4× 68 1.8× 22 0.9× 31 1.6× 17 1.2× 46 246
Allan H. Johnston United States 11 350 0.7× 19 0.5× 35 1.4× 32 1.6× 16 1.1× 32 370
M. DeLaus United States 7 675 1.4× 37 1.0× 28 1.1× 17 0.8× 22 1.6× 13 680
K.L. Hughes United States 8 529 1.1× 55 1.5× 27 1.1× 25 1.3× 22 1.6× 17 543
R.K. Freitag United States 11 283 0.6× 50 1.4× 20 0.8× 26 1.3× 22 1.6× 21 348
Mark C. Hakey United States 6 355 0.8× 26 0.7× 74 3.0× 49 2.5× 11 0.8× 11 380
G.W. Dunham United States 12 415 0.9× 48 1.3× 23 0.9× 14 0.7× 5 0.4× 16 426
X. J. Zhou United States 6 255 0.5× 24 0.6× 16 0.6× 4 0.2× 21 1.5× 10 264
M. Simons United States 13 333 0.7× 30 0.8× 17 0.7× 23 1.1× 28 2.0× 30 343

Countries citing papers authored by A. Michez

Since Specialization
Citations

This map shows the geographic impact of A. Michez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Michez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Michez more than expected).

Fields of papers citing papers by A. Michez

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Michez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Michez. The network helps show where A. Michez may publish in the future.

Co-authorship network of co-authors of A. Michez

This figure shows the co-authorship network connecting the top 25 collaborators of A. Michez. A scholar is included among the top collaborators of A. Michez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Michez. A. Michez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Michez, A., et al.. (2025). Single Event Effects of SiC Power MOSFETs: From Neutron Interaction to Destruction at the Die Level. IEEE Transactions on Nuclear Science. 72(8). 2368–2376.
2.
Michez, A., et al.. (2024). AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 361. 85–91. 3 indexed citations
3.
Pérez, Jean-Philippe, et al.. (2024). Electrical Characterization of Type II Superlattice Midwave Infrared Photodetectors Irradiated by Protons. IEEE Transactions on Nuclear Science. 71(8). 1747–1752.
4.
Wrobel, F., R. Ecoffet, Mioara Mandéa, et al.. (2024). South Atlantic Anomaly Evolution Seen by the Proton Flux. Journal of Geophysical Research Space Physics. 129(6).
5.
Wrobel, F., et al.. (2024). A Methodology to Estimate Single-Event Effects Induced by Low-Energy Protons. SHILAP Revista de lepidopterología. 5(1). 319–332.
6.
Wrobel, F., A. Michez, Frédéric Saigné, et al.. (2024). Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells. Electronics. 13(10). 1954–1954. 1 indexed citations
7.
Wrobel, F., et al.. (2023). CARMEN 2 and 3 LEO Electron Flux Measurements Linear Projection Onto RBSP Elliptical Orbit. IEEE Transactions on Nuclear Science. 70(8). 1564–1571. 4 indexed citations
8.
Wrobel, F., et al.. (2023). Comparison of relativistic electron flux at Low Earth Orbit (LEO) and Electric Orbit Raising (EOR) from the CARMEN Missions. Advances in Space Research. 71(10). 4401–4409. 3 indexed citations
9.
Michez, A., et al.. (2021). Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment. IEEE Transactions on Nuclear Science. 68(8). 1623–1632. 19 indexed citations
10.
Touboul, Antoine, A. Michez, Arto Javanainen, et al.. (2020). Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET. IEEE Transactions on Nuclear Science. 67(7). 1365–1373. 26 indexed citations
11.
Kuboyama, S., Eiichi Mizuta, H. Shindou, et al.. (2019). Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions. IEEE Transactions on Nuclear Science. 66(7). 1688–1693. 24 indexed citations
12.
Michez, A., J. Boch, Antoine Touboul, et al.. (2019). Total Ionizing Dose Effect in LDMOS Oxides and Devices. IEEE Transactions on Nuclear Science. 66(7). 1606–1611. 16 indexed citations
13.
Michez, A., B. Azaïs, Salvatore Danzeca, et al.. (2017). Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits. IEEE Transactions on Nuclear Science. 65(1). 71–77. 2 indexed citations
14.
Boch, J., et al.. (2016). Dose Rate Switching Technique onELDRS-Free Bipolar Devices. IEEE Transactions on Nuclear Science. 63(4). 2065–2071. 7 indexed citations
15.
Boch, J., A. Michez, M.C. Rousselet, et al.. (2015). Dose Rate Switching Technique to Estimate the Low Dose Rate Response of Bipolar Technologies. 1–4. 2 indexed citations
16.
Touboul, Antoine, A. Michez, F. Wrobel, et al.. (2014). Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT. IEEE Transactions on Nuclear Science. 61(4). 1739–1746. 9 indexed citations
17.
Touboul, Antoine, A. Michez, S. Bourdarie, et al.. (2014). On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination. IEEE Transactions on Nuclear Science. 61(6). 2930–2935. 5 indexed citations
18.
Michez, A., et al.. (2002). Numerical simulation of SOS structures. 3. 194–198. 1 indexed citations
19.
Paillet, P., et al.. (1998). Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO/sub 2/. IEEE Transactions on Nuclear Science. 45(3). 1379–1384. 19 indexed citations
20.
Michez, A. & G. Bordure. (1991). TRANSIENT SIMULATION OF SILICON DEVICES UNDER HIGH CARRIER INJECTION. COMPARISON OF VARIOUS TIME STEPPING SCHEMES. COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 10(4). 231–240. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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