I. Ben-Yaacov

596 total citations
10 papers, 467 citations indexed

About

I. Ben-Yaacov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, I. Ben-Yaacov has authored 10 papers receiving a total of 467 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 7 papers in Electronic, Optical and Magnetic Materials and 5 papers in Materials Chemistry. Recurrent topics in I. Ben-Yaacov's work include GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (7 papers) and ZnO doping and properties (5 papers). I. Ben-Yaacov is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (7 papers) and ZnO doping and properties (5 papers). I. Ben-Yaacov collaborates with scholars based in United States, New Zealand and Germany. I. Ben-Yaacov's co-authors include Umesh K. Mishra, Steven P. DenBaars, Ryan J. White, Aaron A. Rowe, Andrew J. Bonham, Kevin W. Plaxco, Michael Zimmer, S. Heikman, L. Shen and S. Keller and has published in prestigious journals such as Applied Physics Letters, PLoS ONE and Journal of Applied Physics.

In The Last Decade

I. Ben-Yaacov

10 papers receiving 453 citations

Peers

I. Ben-Yaacov

EEE

CMP

BE

EOMM

BIOEN

Suku Kim United States

Ali Abdulkhaleq Alwahib Iraq

Mohd Syamsul Japan

Chin‐Che Tin United States

Víctor J. Gómez Spain

C. F. Lo United States

Yequan Chen China

J. Teubert Germany

Muhammad Qazi United States

Claude Ahyi United States

Suku Kim United States

I. Ben-Yaacov

232 ×1.0

EEE

202 ×0.9

CMP

112 ×0.8

BE

73 ×0.6

EOMM

76 ×0.9

BIOEN

Citations per year, relative to I. Ben-Yaacov I. Ben-Yaacov (= 1×) peers Suku Kim

Countries citing papers authored by I. Ben-Yaacov

Since Specialization

Citations

This map shows the geographic impact of I. Ben-Yaacov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Ben-Yaacov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Ben-Yaacov more than expected).

Fields of papers citing papers by I. Ben-Yaacov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Ben-Yaacov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Ben-Yaacov. The network helps show where I. Ben-Yaacov may publish in the future.

Co-authorship network of co-authors of I. Ben-Yaacov

This figure shows the co-authorship network connecting the top 25 collaborators of I. Ben-Yaacov. A scholar is included among the top collaborators of I. Ben-Yaacov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Ben-Yaacov. I. Ben-Yaacov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

1.

Rowe, Aaron A., Andrew J. Bonham, Ryan J. White, et al.. (2011). CheapStat: An Open-Source, “Do-It-Yourself” Potentiostat for Analytical and Educational Applications. PLoS ONE. 6(9). e23783–e23783. 226 indexed citations

2.

Gao, Yan, I. Ben-Yaacov, Umesh K. Mishra, & Evelyn L. Hu. (2004). ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING. International Journal of High Speed Electronics and Systems. 14(1). 245–264. 2 indexed citations

3.

Ben-Yaacov, I., et al.. (2004). AlGaN/GaN current aperture vertical electron transistors with regrown channels. Journal of Applied Physics. 95(4). 2073–2078. 106 indexed citations

4.

Gao, Yan, I. Ben-Yaacov, Umesh K. Mishra, & Evelyn L. Hu. (2004). Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching. Journal of Applied Physics. 96(11). 6925–6927. 25 indexed citations

5.

Ben-Yaacov, I., et al.. (2003). AlGaN/GaN current aperture vertical electron transistors. 31–32. 10 indexed citations

6.

Ben-Yaacov, I., et al.. (2003). Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs). MRS Proceedings. 764. 3 indexed citations

7.

Gao, Yan, et al.. (2003). AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching. Electronics Letters. 39(1). 148–149. 7 indexed citations

8.

Keller, S., S. Heikman, I. Ben-Yaacov, et al.. (2001). Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition. Applied Physics Letters. 79(21). 3449–3451. 55 indexed citations

9.

Keller, S., S. Heikman, I. Ben-Yaacov, et al.. (2001). Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition. physica status solidi (a). 188(2). 775–778. 9 indexed citations

10.

Cheung, Rebecca, Roger J. Reeves, S. A. Brown, et al.. (1999). Reactive ion etch-induced effects on the near-band-edge luminescence in GaN. Applied Physics Letters. 74(21). 3185–3187. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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