Kai Esmark
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- Electrostatic Discharge in Electronics 57
- Integrated Circuits and Semiconductor Failure Analysis 37
- Semiconductor materials and devices 36
- Electromagnetic Compatibility and Noise Suppression 17
- Advancements in Semiconductor Devices and Circuit Design 9
- Silicon Carbide Semiconductor Technologies 4
- 3D IC and TSV technologies 3
- Hardware and Architecture top 10%
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- High voltage insulation and dielectric phenomena 3
- Co-authors
- Wolfgang StadlerHarald GoßnerE. GornikD. PogányM. StecherMartin LitzenbergerS. BychikhinG. Groos
- Journals
- Microelectronics Reliability (15 papers)Journal of Electrostatics (2 papers)IEEE Transactions on Electron Devices (2 papers)
- Partner nations
- GermanyAustriaSwitzerland
In The Last Decade
Kai Esmark
57 papers receiving 544 citations
Peers
Comparison fields: 5 of 19
- Electrical and Electronic Engineering 571
- Hardware and Architecture 29
- Condensed Matter Physics 19
- Atomic and Molecular Physics, and Optics 12
- Materials Chemistry 15
Countries citing papers authored by Kai Esmark
This map shows the geographic impact of Kai Esmark's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kai Esmark with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kai Esmark more than expected).
Fields of papers citing papers by Kai Esmark
This network shows the impact of papers produced by Kai Esmark. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kai Esmark. The network helps show where Kai Esmark may publish in the future.
Co-authorship network
The 25 scholars most cited alongside Kai Esmark, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2024 | 0 | |
| 2 | 2023 | 1 | |
| 3 | 2023 | 2 | |
| 4 | 2022 | 3 | |
| 5 | 2019 | 6 | |
| 6 | 2018 | 3 | |
| 7 | 2011 | 8 | |
| 8 | Triggering of transient latch-up (TLU) by system level ESD | 2010 | 7 |
| 9 | 2009 | 1 | |
| 10 | 2008 | 32 | |
| 11 | 2007 | 6 | |
| 12 | Tunable bipolar transistor for ESD protection of HV CMOS applications | 2006 | 7 |
| 13 | Ultra-thin gate oxide reliability in the ESD time domain | 2006 | 34 |
| 14 | 2003 | 1 | |
| 15 | Advanced simulation methods for ESD protection development | 2003 | 29 |
| 16 | Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies | 2002 | 5 |
| 17 | 2002 | 10 | |
| 18 | Study of trigger instabilities in smart power technology ESD protection devices using a laser interferometric thermal mapping technique | 2001 | 12 |
| 19 | Evaluation of diode-based and NMOS/Lnpn-based ESD protection strategies in a triple gate oxide thickness 0.13 µm CMOS logic technology | 2001 | 21 |
| 20 | 2001 | 2 |
About Kai Esmark
Kai Esmark is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Materials Chemistry, having authored 58 papers that have together received 575 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (57 papers), Integrated Circuits and Semiconductor Failure Analysis (37 papers), Semiconductor materials and devices (36 papers), Electromagnetic Compatibility and Noise Suppression (17 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Silicon Carbide Semiconductor Technologies (4 papers), High voltage insulation and dielectric phenomena (3 papers) and 3D IC and TSV technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (571 citations), Hardware and Architecture (29 citations) and Condensed Matter Physics (19 citations). Kai Esmark has collaborated with scholars based in Germany, Austria and Switzerland. Frequent co-authors include Wolfgang Stadler, Harald Goßner, E. Gornik, D. Pogány, M. Stecher, Martin Litzenberger, S. Bychikhin, G. Groos, Wolf Fïchtner and K. Domański. Their work appears in journals such as Microelectronics Reliability, Journal of Electrostatics, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and Advances in radio science.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.