Jiang Lu

801 total citations
38 papers, 634 citations indexed

About

Jiang Lu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Control and Systems Engineering. According to data from OpenAlex, Jiang Lu has authored 38 papers receiving a total of 634 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Control and Systems Engineering. Recurrent topics in Jiang Lu's work include Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Jiang Lu is often cited by papers focused on Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Jiang Lu collaborates with scholars based in China, Singapore and United States. Jiang Lu's co-authors include Erik Janzén, L. Storasta, J. P. Bergman, Anne Henry, Xinyu Liu, Xiaoli Tian, Yun Bai, Tianyu Zhao, Chengzhan Li and Yidan Tang and has published in prestigious journals such as Journal of Applied Physics, Advanced Energy Materials and IEEE Transactions on Electron Devices.

In The Last Decade

Jiang Lu

35 papers receiving 604 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jiang Lu China 11 516 143 81 79 68 38 634
J. O'Shea United States 9 357 0.7× 332 2.3× 72 0.9× 157 2.0× 312 4.6× 14 611
S. Bychikhin Austria 16 650 1.3× 89 0.6× 36 0.4× 166 2.1× 258 3.8× 60 760
Kimimori Hamada Japan 18 931 1.8× 81 0.6× 62 0.8× 49 0.6× 44 0.6× 46 965
Jixin Liang China 11 175 0.3× 158 1.1× 22 0.3× 100 1.3× 12 0.2× 25 354
S.G. Sridhara Sweden 15 918 1.8× 227 1.6× 131 1.6× 146 1.8× 34 0.5× 25 963
Jianzheng Hu South Korea 12 300 0.6× 85 0.6× 20 0.2× 74 0.9× 357 5.3× 16 450
H. Ziad Belgium 11 405 0.8× 140 1.0× 79 1.0× 35 0.4× 215 3.2× 20 476
Patrick M. Buhl Germany 14 99 0.2× 299 2.1× 75 0.9× 234 3.0× 117 1.7× 26 549
Hiroshi Tsuge Japan 12 415 0.8× 88 0.6× 112 1.4× 43 0.5× 16 0.2× 49 482
Mirko Bernardoni Italy 10 319 0.6× 15 0.1× 46 0.6× 192 2.4× 199 2.9× 25 424

Countries citing papers authored by Jiang Lu

Since Specialization
Citations

This map shows the geographic impact of Jiang Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiang Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiang Lu more than expected).

Fields of papers citing papers by Jiang Lu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiang Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiang Lu. The network helps show where Jiang Lu may publish in the future.

Co-authorship network of co-authors of Jiang Lu

This figure shows the co-authorship network connecting the top 25 collaborators of Jiang Lu. A scholar is included among the top collaborators of Jiang Lu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiang Lu. Jiang Lu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lu, Jiang. (2025). Exploring the Psychological Mechanisms of Micro-Series Addiction. Lecture Notes in Education Psychology and Public Media. 81(1). 195–202.
2.
Lu, Jiang, Jinze Wang, Xin Cao, et al.. (2024). Dynamically Forming Interconnected Interfaces in Confined Heterostructures Enable High Capacity Conversion Chemistry. Advanced Energy Materials. 14(25). 5 indexed citations
3.
Lu, Jiang, et al.. (2024). The Effects on Stability and Electronic Structure of Si-Segregated θ′/Al Interface Systems in Al-Cu Alloys. Coatings. 14(7). 879–879. 2 indexed citations
4.
Xu, Mengchen, Jinshu Li, Qingshan Yang, et al.. (2023). Morphology-controlled green synthesis of tellurium nanostructures and applications of Te/MXene hybrid structures. Materials Advances. 4(22). 5668–5673. 3 indexed citations
5.
Tian, Xiaoli, Jiang Lu, Xinhua Wang, et al.. (2023). A Novel 4H–SiC/Si Heterojunction IGBT Achieving Low Turn–Off Loss. Electronics. 12(11). 2501–2501. 1 indexed citations
6.
Bai, Yun, Chengzhan Li, Xiaoli Tian, et al.. (2023). Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals. Electronics. 12(9). 2133–2133. 2 indexed citations
7.
Bai, Yun, et al.. (2022). Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation. IEEE Transactions on Nuclear Science. 69(4). 932–937. 7 indexed citations
8.
Lu, Jiang, et al.. (2022). A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness. Electronics. 11(7). 1077–1077. 1 indexed citations
9.
Lu, Jiang, et al.. (2022). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure. Chinese Physics B. 31(9). 98502–98502. 2 indexed citations
10.
Bai, Yun, Chengzhan Li, Hong Chen, et al.. (2022). Bias Temperature Instability of 4H-SiC p- and n-Channel MOSFETs Induced by Negative Stress at 200 °C. IEEE Transactions on Electron Devices. 69(6). 3042–3046. 10 indexed citations
11.
Bai, Yun, Yidan Tang, Chengzhan Li, et al.. (2021). Analysis of Transient Surge Current Mechanism in SiC MPS Diode With the Transition Region. IEEE Transactions on Electron Devices. 68(12). 6330–6337. 5 indexed citations
12.
Bai, Yun, et al.. (2020). A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss. Semiconductor Science and Technology. 35(10). 105002–105002. 10 indexed citations
13.
Bai, Yun, et al.. (2020). A novel 4H-SiC MOSFET for low switching loss and high-reliability applications. Semiconductor Science and Technology. 35(8). 85017–85017. 14 indexed citations
14.
Zhao, Tianyu, et al.. (2020). Coupled free vibration of a functionally graded pre-twisted blade-shaft system reinforced with graphene nanoplatelets. Composite Structures. 262. 113362–113362. 61 indexed citations
15.
Lu, Jiang, Jiawei Liu, Xiaoli Tian, et al.. (2020). Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs. IEEE Transactions on Electron Devices. 67(9). 3698–3704. 52 indexed citations
16.
Bai, Yun, Xinyu Liu, Chengzhan Li, et al.. (2020). Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation*. Chinese Physics B. 29(9). 97301–97301. 2 indexed citations
17.
Wang, Shijia, Yongxing Wang, Enyuan Dong, et al.. (2019). Synthesis Test Control of HVDC Circuit Breaker. 263–266. 2 indexed citations
18.
Kang, Xuanwu, Yingkui Zheng, Jiang Lu, et al.. (2019). Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs). Electronics. 8(5). 575–575. 78 indexed citations
19.
Lu, Jiang, Jun Luo, Lixin Wang, et al.. (2016). Improved single-event hardness of trench power MOSFET with a widened split gate. 1–5. 12 indexed citations
20.
Wang, Lixin, et al.. (2006). Development of a Stripe Gate Power MOSFET. Journal of Semiconductors. 27. 205–207. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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