P. Mazoyer

1.9k citations

42 papers · 1.2k indexed · h-index 17

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 19
- Ferroelectric and Negative Capacitance Devices 15
- Advanced Memory and Neural Computing 13
- Integrated Circuits and Semiconductor Failure Analysis 5
Atomic and Molecular Physics, and Optics top 5%
- Magnetic properties of thin films 12
- Quantum and electron transport phenomena 3
Hardware and Architecture top 10%
Electronic, Optical and Magnetic Materials
Materials Chemistry
- Electronic and Structural Properties of Oxides 3

Co-authors: Weisheng Zhao Claude Chappert Jacques‐Olivier Klein Eric Belhaire T. Devolder D. Ravelosona Yin Zhang C. Chappert
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Hardware and Architecture
Journals: Solid-State Electronics (4 papers)IEEE Transactions on Magnetics (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: France Switzerland Italy

In The Last Decade

P. Mazoyer

40 papers receiving 1.1k citations

Peers

Countries citing papers authored by P. Mazoyer

Since Specialization

Citations

This map shows the geographic impact of P. Mazoyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Mazoyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Mazoyer more than expected).

Fields of papers citing papers by P. Mazoyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Mazoyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Mazoyer. The network helps show where P. Mazoyer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Mazoyer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Mazoyer Line = papers co-authored together P. Mazoyer links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Failure and reliability analysis of STT-MRAM Microelectronics Reliability ·Weisheng Zhao,Yin Zhang,T. Devolder,Jacques‐Olivier Klein,D. Ravelosona,C. Chappert,P. Mazoyer	2012	197
2	Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application Thin Solid Films ·Sharma Pradeep,Marie‐Paule Besland,Julien Tranchant,B. Corraze,Philippe Moreau,R. Retoux,Claude Estournès,P. Mazoyer,Laurent Cario,Étienne Janod	2012	8
3	VLSI platform for the monolithic integration of single-crystal Si NEMS capacitive resonators with low-cost CMOS Julien Arcamone,季弘稲村,Renjani Puri Pinasthi,J. Philippe,C. Marcoux,Éric Colinet,Laurent Duraffourg,T. Magis,Felipe Correa Pedro,P. Putzeys,P. Mazoyer,P. Ancey,Philippe Robert,E. Ollier	2012	10
4	First evidence of resistive switching in polycrystalline GaV₄S₈ thin layers physica status solidi (RRL) - Rapid Research Letters ·Sharma Pradeep,Laurent Cario,B. Corraze,Philippe Moreau,P. Mazoyer,Claude Estournès,R. Retoux,Étienne Janod,Marie‐Paule Besland	2010	19
5	High Density Asynchronous LUT Based on Non-volatile MRAM Technology SPIRE - Sciences Po Institutional REpository ·Ján Roman,Weisheng Zhao,Jacques‐Olivier Klein,Claude Chappert,P. Mazoyer	2010	4
6	Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application IEEE Transactions on Electron Devices ·S. Puget,Mizuki Yamada,Pascal Le Masson,P. Mazoyer,R. Ranica,A. Villaret,智彦金森,Ángel Luis Muñoz Martín,D. Rideau,G. Ghibaudo,R. Bouchakour,G. Jacquemod,T. Skotnicki	2010	0
7	Power and Area Optimization for Run-Time Reconfiguration System On Programmable Chip Based on Magnetic Random Access Memory IEEE Transactions on Magnetics ·J. CHAVAZ,Eric Belhaire,C. Chappert,P. Mazoyer	2009	29
8	Thin Layers Obtained by Plasma Process for Emerging Non-Volatile Memory (RRAM) Applications Sharma Pradeep,Laurent Cario,B. Corraze,Claude Estournès,V. Fernandez,T. Skotnicki,P. Mazoyer,Étienne Janod,Marie‐Paule Besland	2009	5
9	Role of chelating agent on the oxidic state of hydrotreating catalysts Catalysis Today ·P. Mazoyer,C. Geantet,Fabrice Diehl,S. Loridant,Michel Lacroix	2007	63
10	Quantum effects influence on thin silicon film capacitor-less DRAM performance S. Puget,Mizuki Yamada,R.O. Sebanjo,R. Ranica,A. Villaret,Pascal Le Masson,Arthur L Qualls,P. Mazoyer,T. Skotnicki	2006	1
11	Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides IEEE Transactions on Nuclear Science ·Simone Gerardin,Andrea Cester,A. Paccagnella,Gilles Gasiot,P. Mazoyer,Ph. Roche	2005	7
12	Impact of Tunnel Etching Process on Electrical Performances of SON Devices Japanese Journal of Applied Physics ·M. S. Shilpa,S. Borel,C. Arvet,啓吾岩田,D. Chanemougame,S. Monfray,R. Ranica,P. Mazoyer,T. Skotnicki	2005	8
13	Further Insight Into the Physics and Modeling of Floating-Body Capacitorless DRAMs IEEE Transactions on Electron Devices ·A. Villaret,R. Ranica,R. Dembek,Pascal Le Masson,S Labhard,P. Mazoyer,P. Candelier,T. Skotnicki	2005	3
14	Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM Solid-State Electronics ·E. Gerritsen,Plesníková Paulína,C. Caillat,Riza Rusyiana,Ce Guo,D. Fraboulet,Maya Efstathiou,A. Berthelot,S. E. Smith,P. Mazoyer	2005	79
15	A New 40-nm SONOS Structure Based on Backside Trapping for Nanoscale Memories IEEE Transactions on Nanotechnology ·R. Ranica,A. Villaret,P. Mazoyer,S. Monfray,D. Chanemougame,Pascal Le Masson,Madhuri Gullapelli,MARK COHEN,R. Bez,T. Skotnicki	2005	9
16	Introduction Solid-State Electronics ·E. Gerritsen,Pascal Le Masson,P. Mazoyer	2005	0
17	Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs Microelectronic Engineering ·A. Villaret,R. Ranica,Pascal Le Masson,R. Dembek,P. Mazoyer,P. Candelier,Mahmoud Seifallahi,S. Cristoloveanu,T. Skotnicki	2004	3
18	MIM HfO/sub 2/ low leakage capacitors for eDRAM integration at interconnect levels P. Mazoyer,S. Blonkowski,Kuanysh S. Moldasan,A. Farcy,J. Torrès,G. Reimbold,Г. Н. Бузук,J.-F. Damlencourt,Y. Morand,正士白根澤,Rafael fl. 1937	2004	2
19	A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM R. Ranica,A. Villaret,R. Dembek,P. Mazoyer,D. Lenoble,P. Candelier,Mahmoud Seifallahi,Pascal Le Masson,R. Bouchakour,Ibtissem Bouzida,Stanislaw Jaroszynski,T. Skotnicki	2004	25
20	Emerging silicon-on-nothing (SON) devices technology Solid-State Electronics ·S. Monfray,T. Skotnicki,C. Fenouillet-Béranger,ibraham alafia,D. Chanemougame,Y. Morand,Rafael fl. 1937,Adnan Masood,D. Dutartre,Hassem Rodriguez-Villanueva,P. Mazoyer,R. Palla,F. Leverd,Y. Le Friec,R. Pantel,S. Borel,D. Louis,N. Buffet	2004	34

About P. Mazoyer

P. Mazoyer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Hardware and Architecture, having authored 42 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Advanced Memory and Neural Computing (13 papers), Magnetic properties of thin films (12 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Electronic and Structural Properties of Oxides (3 papers) and Quantum and electron transport phenomena (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (977 citations), Atomic and Molecular Physics, and Optics (458 citations), Hardware and Architecture (73 citations), Electronic, Optical and Magnetic Materials (110 citations) and Materials Chemistry (219 citations). P. Mazoyer has collaborated with scholars based in France, Switzerland and Italy. Frequent co-authors include Weisheng Zhao, Claude Chappert, Jacques‐Olivier Klein, Eric Belhaire, T. Devolder, D. Ravelosona, Yin Zhang, C. Chappert, T. Skotnicki and François Jacquet. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Magnetics, IEEE Transactions on Electron Devices, Microelectronics Reliability and IEEE Transactions on Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact