R. Bez

5.3k total citations · 3 hit papers
78 papers, 3.8k citations indexed

About

R. Bez is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Bez has authored 78 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Electrical and Electronic Engineering, 42 papers in Materials Chemistry and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Bez's work include Semiconductor materials and devices (38 papers), Phase-change materials and chalcogenides (37 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). R. Bez is often cited by papers focused on Semiconductor materials and devices (38 papers), Phase-change materials and chalcogenides (37 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). R. Bez collaborates with scholars based in Italy, Switzerland and United States. R. Bez's co-authors include A. Pirovano, F. Pellizzer, Andrea L. Lacaita, A. Benvenuti, Alberto Modelli, A. Visconti, E. Camerlenghi, P. Olivo, Enrico Zanoni and Paolo Pavan and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Proceedings of the IEEE.

In The Last Decade

R. Bez

74 papers receiving 3.6k citations

Hit Papers

Introduction to flash memory 1997 2026 2006 2016 2003 1997 2004 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Bez Italy 25 3.1k 2.2k 604 558 520 78 3.8k
F. Pellizzer Italy 22 2.3k 0.7× 2.2k 1.0× 641 1.1× 290 0.5× 557 1.1× 56 2.8k
Martin Salinga Germany 27 3.1k 1.0× 3.0k 1.4× 814 1.3× 370 0.7× 851 1.6× 46 4.3k
A. Pirovano Italy 26 2.6k 0.8× 2.5k 1.1× 718 1.2× 163 0.3× 631 1.2× 67 3.1k
C. Lam United States 26 2.4k 0.8× 1.6k 0.7× 281 0.5× 609 1.1× 497 1.0× 70 2.9k
R. Degraeve Belgium 50 10.9k 3.5× 2.4k 1.1× 538 0.9× 217 0.4× 566 1.1× 441 11.2k
Daniel Krebs Germany 20 1.4k 0.5× 1.2k 0.6× 217 0.4× 362 0.6× 406 0.8× 40 2.0k
John P. Reifenberg United States 13 1.5k 0.5× 1.3k 0.6× 245 0.4× 246 0.4× 444 0.9× 22 2.0k
Ming‐Jinn Tsai Taiwan 37 5.9k 1.9× 1.7k 0.8× 269 0.4× 153 0.3× 1.4k 2.8× 147 6.2k
M. Breitwisch United States 20 1.4k 0.5× 886 0.4× 201 0.3× 464 0.8× 252 0.5× 43 1.9k
Andrea Redaelli Italy 23 1.5k 0.5× 1.5k 0.7× 372 0.6× 96 0.2× 427 0.8× 69 1.8k

Countries citing papers authored by R. Bez

Since Specialization
Citations

This map shows the geographic impact of R. Bez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Bez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Bez more than expected).

Fields of papers citing papers by R. Bez

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Bez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Bez. The network helps show where R. Bez may publish in the future.

Co-authorship network of co-authors of R. Bez

This figure shows the co-authorship network connecting the top 25 collaborators of R. Bez. A scholar is included among the top collaborators of R. Bez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Bez. R. Bez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fantini, Paolo, A. Ghetti, E. Varesi, et al.. (2024). VT Window Model of the Single-Chalcogenide Xpoint Memory (SXM). BOA (University of Milano-Bicocca). 1–4. 3 indexed citations
2.
Pellizzer, F., A. Benvenuti, Bob Johnson, et al.. (2006). A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications. 122–123. 87 indexed citations
3.
Bez, R. & G. Atwood. (2006). Chalcogenide Phase Change Memory: Scalable NVM for the Next Decade?. 12–14. 24 indexed citations
4.
Cappelletti, P., R. Bez, Alberto Modelli, & A. Visconti. (2005). What we have learned on flash memory reliability in the last ten years. 489–492. 14 indexed citations
5.
Selmi, L., C. Fiegna, E. Sangiorgi, R. Bez, & B. Riccò. (2005). A Study Of Injection Conditions In The Substrate Hot Electron Induced Degradation Of n-MOSFETs. 156–157.
6.
Atwood, G. & R. Bez. (2005). Current status of chalcogenide phase change memory. 29–33. 41 indexed citations
8.
Pirovano, A., Andrea L. Lacaita, A. Benvenuti, F. Pellizzer, & R. Bez. (2004). Electronic Switching in Phase-Change Memories. IEEE Transactions on Electron Devices. 51(3). 452–459. 502 indexed citations breakdown →
9.
Piccinini, F., et al.. (2002). Complete transient simulation of flash EEPROM devices. 201–204. 8 indexed citations
10.
Lanzoni, M., L. Selmi, R. Bez, & M. Manfredi. (2002). A test pattern to investigate the effect of capping layers on the hot carrier induced photon spectra of MOSFETs. 204–207. 2 indexed citations
11.
Bez, R., et al.. (2002). Narrow width effects in CMOS n(p)-well resistors. 29. 13–16.
12.
Micheloni, Rino, Carla Golla, R. Bez, et al.. (2000). 40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory. IEEE Journal of Solid-State Circuits. 35(11). 1655–1667. 26 indexed citations
13.
Ghetti, A., L. Selmi, & R. Bez. (1999). Low-voltage hot electrons and soft-programming lifetime prediction in nonvolatile memory cells. IEEE Transactions on Electron Devices. 46(4). 696–702. 22 indexed citations
14.
Bez, R., et al.. (1998). A new erasing method for a single-voltage long-endurance flash memory. IEEE Electron Device Letters. 19(2). 37–39. 6 indexed citations
15.
Bez, R., et al.. (1996). A Triple-well Architecture for Low-voltage Operation in Submicron CMOS Devices. European Solid-State Device Research Conference. 613–616. 5 indexed citations
16.
Perron, Laurence, et al.. (1996). Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET's. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 833–836. 5 indexed citations
17.
Concannon, A., A. Mathewson, F. Piccinini, et al.. (1994). Applications of a Novel Hot Carrier Injection Model in Flash EEPROM Design. 503–506. 2 indexed citations
18.
Selmi, L., C. Fiegna, & R. Bez. (1994). Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET's. IEEE Transactions on Electron Devices. 41(9). 1677–1679. 1 indexed citations
19.
Bez, R., et al.. (1990). Experimental transient analysis of the tunnel current in EEPROM cells. IEEE Transactions on Electron Devices. 37(4). 1081–1086. 43 indexed citations
20.
Bez, R., et al.. (1988). SPICE MODEL FOR TRANSIENT ANALYSIS OF EEPROM CELLS. Le Journal de Physique Colloques. 49(C4). C4–677. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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