Julien Tranchant

902 total citations
31 papers, 688 citations indexed

About

Julien Tranchant is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Julien Tranchant has authored 31 papers receiving a total of 688 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 17 papers in Polymers and Plastics. Recurrent topics in Julien Tranchant's work include Advanced Memory and Neural Computing (20 papers), Transition Metal Oxide Nanomaterials (17 papers) and Electronic and Structural Properties of Oxides (10 papers). Julien Tranchant is often cited by papers focused on Advanced Memory and Neural Computing (20 papers), Transition Metal Oxide Nanomaterials (17 papers) and Electronic and Structural Properties of Oxides (10 papers). Julien Tranchant collaborates with scholars based in France, Argentina and Spain. Julien Tranchant's co-authors include Laurent Cario, Étienne Janod, B. Corraze, Pablo Stoliar, M. J. Rozenberg, Marie‐Paule Besland, Federico Tesler, Vincent Guiot, Dimitri Roditchev and Tristan Cren and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Julien Tranchant

29 papers receiving 679 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Julien Tranchant France 11 546 265 227 144 123 31 688
Yiming Sun China 11 465 0.9× 193 0.7× 158 0.7× 130 0.9× 121 1.0× 27 638
Danilo Bürger Germany 19 756 1.4× 261 1.0× 500 2.2× 205 1.4× 287 2.3× 59 1.1k
Javier del Valle United States 18 816 1.5× 589 2.2× 340 1.5× 161 1.1× 236 1.9× 43 1.1k
Sören Boyn France 8 831 1.5× 103 0.4× 411 1.8× 263 1.8× 231 1.9× 11 1.0k
Qingxuan Li China 15 789 1.4× 196 0.7× 225 1.0× 300 2.1× 33 0.3× 50 932
Shujing Jia China 11 435 0.8× 107 0.4× 343 1.5× 41 0.3× 63 0.5× 29 552
S. Hall United Kingdom 19 1.1k 2.0× 102 0.4× 400 1.8× 107 0.7× 100 0.8× 112 1.2k
Jamal Aziz South Korea 17 551 1.0× 187 0.7× 284 1.3× 130 0.9× 74 0.6× 38 725
Weichuan Huang China 19 580 1.1× 116 0.4× 521 2.3× 84 0.6× 363 3.0× 32 996

Countries citing papers authored by Julien Tranchant

Since Specialization
Citations

This map shows the geographic impact of Julien Tranchant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Julien Tranchant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Julien Tranchant more than expected).

Fields of papers citing papers by Julien Tranchant

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Julien Tranchant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Julien Tranchant. The network helps show where Julien Tranchant may publish in the future.

Co-authorship network of co-authors of Julien Tranchant

This figure shows the co-authorship network connecting the top 25 collaborators of Julien Tranchant. A scholar is included among the top collaborators of Julien Tranchant based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Julien Tranchant. Julien Tranchant is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gauthier, Thomas, Roman Bertoni, Étienne Janod, et al.. (2024). Ultrafast spectroscopy of coherent phonons across the pressure driven insulator to metal phase transition in V2O3. Physical Review Research. 6(4). 1 indexed citations
2.
Tizei, Luiz H. G., Xiaoyan Li, Nathalie Brun, et al.. (2023). Metal/Insulator Transitions in V2O3 Systems Investigated at the Nanoscale by Spectromicroscopy Techniques under Cryo-conditions. Microscopy and Microanalysis. 29(Supplement_1). 1691–1692. 1 indexed citations
3.
Tranchant, Julien, Marie‐Paule Besland, Amaël Caillard, et al.. (2023). Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(6). 1 indexed citations
4.
Tranchant, Julien, Étienne Janod, B. Corraze, et al.. (2023). Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1–xVx)2O3. ACS Applied Materials & Interfaces. 15(47). 54611–54621.
5.
Tranchant, Julien, et al.. (2022). Impact of the terahertz and optical pump penetration depths on generated strain waves temporal profiles in a V2O3 thin film. Faraday Discussions. 237(0). 389–405. 4 indexed citations
6.
Trzop, Elżbieta, Julien Tranchant, B. Corraze, et al.. (2022). Ultrafast photo-induced dynamics of $$\hbox {V}_{2} \hbox {O}_{3}$$ thin films under hydrostatic pressure. The European Physical Journal Special Topics. 232(13). 2195–2203. 2 indexed citations
7.
Cario, Laurent, B. Corraze, Maciej Lorenc, et al.. (2022). Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator. Physical Review Applied. 17(1). 3 indexed citations
8.
Corraze, B., Marie‐Paule Besland, Laurent Cario, et al.. (2020). Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers. Journal of Materials Science. 55(30). 14717–14727. 6 indexed citations
9.
Tranchant, Julien, et al.. (2018). Mott Memory Devices Based on the Mott Insulator (V1-xCrx)2O3. 13. 1–4. 2 indexed citations
10.
Stoliar, Pablo, Julien Tranchant, B. Corraze, et al.. (2017). A Leaky‐Integrate‐and‐Fire Neuron Analog Realized with a Mott Insulator. Advanced Functional Materials. 27(11). 211 indexed citations
11.
Adda, Coline, Julien Tranchant, Pablo Stoliar, et al.. (2017). An Artificial Neuron Founded on Resistive Switching of Mott Insulators. 9. 1–4. 1 indexed citations
12.
Janod, Étienne, Laurent Cario, Julien Tranchant, et al.. (2015). Metal–insulator transitions in (V1-xCrx)2O3 thin films deposited by reactive direct current magnetron co-sputtering. Thin Solid Films. 617. 56–62. 17 indexed citations
13.
Stoliar, Pablo, M. J. Rozenberg, Étienne Janod, et al.. (2014). Nonthermal and purely electronic resistive switching in a Mott memory. Physical Review B. 90(4). 37 indexed citations
14.
Tranchant, Julien, Étienne Janod, B. Corraze, et al.. (2014). Control of resistive switching in AM4Q8narrow gap Mott insulators: A first step towards neuromorphic applications. physica status solidi (a). 212(2). 239–244. 15 indexed citations
15.
Stoliar, Pablo, Laurent Cario, Étienne Janod, et al.. (2013). Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators. Advanced Materials. 25(23). 3222–3226. 112 indexed citations
16.
Corraze, B., Étienne Janod, Laurent Cario, et al.. (2013). Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8. The European Physical Journal Special Topics. 222(5). 1046–1056. 15 indexed citations
17.
Besland, Marie‐Paule, Julien Tranchant, B. Corraze, et al.. (2012). Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. Thin Solid Films. 533. 54–60. 8 indexed citations
18.
Girault, Baptiste, Vanessa Vidal, L. Thilly, et al.. (2008). Small scale mechanical properties of polycrystalline materials: in situ diffraction studies. International Journal of Nanotechnology. 5(6/7/8). 609–609. 4 indexed citations
19.
Tranchant, Julien, Pierre‐Yves Tessier, Jean-Pierre Landesman, et al.. (2007). Relation between residual stresses and microstructure in Mo(Cr) thin films elaborated by ionized magnetron sputtering. Surface and Coatings Technology. 202(11). 2247–2251. 7 indexed citations
20.
Tranchant, Julien, B. Angleraud, Pierre‐Yves Tessier, et al.. (2006). Residual stress control in MoCr thin films deposited by ionized magnetron sputtering. Surface and Coatings Technology. 200(22-23). 6549–6553. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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