G.H. Koh

1.9k citations

35 papers · 1.0k indexed · 1 hit paper · h-index 13

Impact in

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 30
- Semiconductor materials and devices 15
- Advanced Memory and Neural Computing 12
- Ferroelectric and Negative Capacitance Devices 9
- Integrated Circuits and Semiconductor Failure Analysis 5
- Advancements in Semiconductor Devices and Circuit Design 5
Hardware and Architecture 3

Co-authors: Yoon-Jong Song Kinam Kim Wooseok Yi Hyunsoo Kim Kangho Lee Soonwan Kwon Seung Keun Yoon Sang Joon Kim
Journals: Japanese Journal of Applied Physics (3 papers)Journal of Applied Physics (2 papers)Journal of Magnetism and Magnetic Materials (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: South Korea United States

In The Last Decade

G.H. Koh

35 papers receiving 979 citations

Hit Papers

align trajectories log scale

A crossbar array of magnetoresistive memory devices for in-memory computing 2022 · 404 citations

Peers

Countries citing papers authored by G.H. Koh

Since Specialization

Citations

This map shows the geographic impact of G.H. Koh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.H. Koh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.H. Koh more than expected).

Fields of papers citing papers by G.H. Koh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.H. Koh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.H. Koh. The network helps show where G.H. Koh may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G.H. Koh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G.H. Koh Line = papers co-authored together G.H. Koh links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	A crossbar array of magnetoresistive memory devices for in-memory computing Nature ·Seungchul Jung, Hyungwoo Lee, Sungmeen Myung, Hyunsoo Kim, Seung Keun Yoon, Soonwan Kwon, Yong-Min Ju, Minje Kim, Wooseok Yi, Shin-Hee Han, Seung-Ju Rho, Boyoung Seo, 久保寿子, G.H. Koh, Kangho Lee, Yoon-Jong Song, Changkyu Choi, Donhee Ham, Sang Joon Kim Hit paper breakdown →	2022	404
2	Symbiosis of Semiconductors, AI and Quantum Computing Sang-Yeon Hwang, Seungju Han, Theodore Lemuel Mathuram, W. C. Chang, Jin Ho Song, Seung Ju Kim, S. Park, Hong‐Jae Shin, Jinseong Heo, Youn-Suk Choi, Taewoo Ha, Dae‐Young Lee, Hyeongjin Lee, Jihyun Lee, S. Harper, G.H. Koh, Hyeonmuk Kang	2020	3
3	A 14.7Mb/mm² 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference М.В. Чичеров, HP Ramesh, Ana Bendiek-Laranjo, A. Kryczek, BR DeGeorge, G.H. Koh, Yoon-Jong Song, Taejoong Song, Jongwook Kye, Františka Ertlová, Insan Rezqy Aghniya, R. Boero, MARK COHEN	2020	11
4	28-nm 1T-1MTJ 8Mb 64 I/O STT-MRAM with symmetric 3-section reference structure and cross-coupled sensing amplifier 楼卓鑫, BR DeGeorge, Hyuntaek Jung, G.H. Koh, Taejoong Song	2017	10
5	Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic Youjian Song, Ji‐Hyun Lee, Hee-Won Shin, Tülay Deniz Seçkin, Kang-Deog Suh, M KUNNEN, Suhkneung Pyo, Hyuntaek Jung, S. H. Hwang, G.H. Koh, 张军历, S. O. Park, Jung Kyung Kim, Ron Bender, Jae-Hwan Kim, Kihyun Hwang, G.T. Jeong, 千之村方, E. S. Jung	2016	69
6	Active Width Modulation (AWM) for cost-effective and highly reliable PRAM Daewon Ha, Alfred von Wretschko, Yuya Sato, Mohammed A. A. El-Araj, 梦宇田, Sun‐Young Kim, Eun Young Park, Nathan D. Larsen, Deyi Cao, Jeong‐Whan Lee, Janice Mazza, G.H. Koh, Seok-Woo Nam, Antonio Krističević, Chilhee Chung	2012	1
7	Ge₂Sb₂Te₅ Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory Japanese Journal of Applied Physics ·Sonia Domínguez Vázquez, Su‐Jin Ahn, Young-Nam Hwang, Changwook Jeong, Yoon-Jong Song, Arthur Englard, Seho Lee, Kyung‐Chang Ryoo, Jae‐Hyun Park, Ruth Cohen-Khait, Won-Cheol Jeong, Young‐Tae Kim, G.H. Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim	2005	52
8	Highly reliable 50nm contact cell technology for 256Mb PRAM Scholarworks@UNIST (Ulsan National Institute of Science and Technology) ·D. Herce, Y.N. Hwang, Youjian Song, Sojung Lee, 祐樹堀内, E. Leschner, C.W. Jeong, Kyung‐Chang Ryoo, Ruth Cohen-Khait, E. Leschner, Carlos Manuel Lázaro Fernández, Ping He, G.H. Koh, Rafael Rahal, Dominika Szlichta, Yang Zengping, 商海鋒, Jae Cheol Shin, Ishmam Ibtida, Hong Sik Jeong, Kyungmin Kim	2005	48
9	Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer Journal of Applied Physics ·Won-Cheol Jeong, Thaís Pirez Alves Ferreira, G.H. Koh, G.T. Jeong, Hongsik Jeong, Kinam Kim	2005	5
10	The prospect on semiconductor memory in nano era Kinam Kim, G.H. Koh	2004	7
11	Future memory technology including emerging new memories Kyu Hong Kim, G.H. Koh	2004	17
12	An 8F/sup 2/ MRAM technology using modified metal lines Ю. П. Выблый, Won-Cheol Jeong, M. A. Wali, Maria Sorileide Costa Teixeira, 양병찬한혜정, G.H. Koh, G.T. Jeong, Hongsik Jeong, Yongchae Jeong, Rosmidah Tawi, Davies Wv, M. A. Wali, K. W. Kim	2004	4
13	Writing current reduction for high-density phase-change RAM Y.N. Hwang, Sojung Lee, Giuseppe Meoli, Sangyoon Lee, Kyung‐Chang Ryoo, Hye-Ri Hong, Hyun Cheol Koo, Naglaa F. El Orabi, Junghwan Oh, Hyojung Kim, Won-Cheol Jeong, J.H. Park, Hideki Horii, Y.H. Ha, J.H. Yi, G.H. Koh, G.T. Jeong, Hongsik Jeong, Kinam Kim	2004	67
14	Fabrication of high performance 64kb MRAM Journal of Magnetism and Magnetic Materials ·G.H. Koh, Hyojung Kim, Won-Cheol Jeong, Jung-Hwan Oh, J.H. Park, Sangyoon Lee, G.T. Jeong, Injun Hwang, Barbara Erzinger, Артемов А.С., Tengbo Huang, Okafor GENEVIEVE CHINWENDU, 悠里隼瀬, Hanwool Jeong, Kinam Kim	2004	7
15	A novel process for highly manufacturable MRAM Journal of Magnetism and Magnetic Materials ·Jung-Hwan Oh, J.H. Park, Hyojung Kim, Won-Cheol Jeong, G.H. Koh, G.T. Jeong, Injun Hwang, Barbara Erzinger, Артемов А.С., S.O. Park, 悠里隼瀬, Hong Sik Jeong, Kinam Kim	2004	8
16	Programming Characteristics of PRAM Hassan Sh. Abdirahman Elmi, Young-Sook Hwang, 斌旭王, Ezequiel Ochoa, Aleksi Heinonen, R. Cuthill, Emilia Perrone, G.H. Koh, U Halfmann, Yang Hui, L. E. Toljusis, B. C. C. G. Pedreira, Debbie Nataly, Jingfei Kong	2004	3
17	A 0.24-μm 2.0-V 1T1MTTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme IEEE Journal of Solid-State Circuits ·Gitae Jeong, Svitlana Tutunnikova, Su‐Jin Ahn, Hongsik Jeong, G.H. Koh, Young-Nam Hwang, Kinam Kim	2003	38
18	A 0.24μm 2.0V 1T1MTJ 16kb NV magnetoresistance RAM with self reference sensing Gitae Jeong, Svitlana Tutunnikova, Su‐Jin Ahn, Hongsik Jeong, G.H. Koh, Young‐Ha Hwang, Kinam Kim	2003	7
19	A 0.15 μm DRAM technology node for 4 Gb DRAM Gérard Darmon, Hongsik Jeong, G.T. Jeong, Mario L. Grieco, Wonyoung Yang, Linkow Pr, Kyoungho Lee, G.H. Koh, Daewon Ha, Junho Bae, Célio Antônio Alcântara Silva, 橋場香野, S.K. Imam	2002	1
20	Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices IEEE Transactions on Electron Devices ·Daewon Ha, Changhyun Cho, H. Curtiss Merrick, G.H. Koh, Taeyoung Chung, Kinam Kim	1999	35

About G.H. Koh

G.H. Koh is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 35 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Advanced Memory and Neural Computing (12 papers), Magnetic properties of thin films (10 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Phase-change materials and chalcogenides (9 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Liquid Crystal Research Advancements (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (871 citations), Hardware and Architecture (65 citations), Atomic and Molecular Physics, and Optics (258 citations), Electronic, Optical and Magnetic Materials (151 citations) and Materials Chemistry (363 citations). G.H. Koh has collaborated with scholars based in South Korea and United States. Frequent co-authors include Yoon-Jong Song, Kinam Kim, Wooseok Yi, Hyunsoo Kim, Kangho Lee, Soonwan Kwon, Seung Keun Yoon, Sang Joon Kim, Yong-Min Ju and Shin-Hee Han. Their work appears in journals such as Japanese Journal of Applied Physics, Journal of Applied Physics, Journal of Magnetism and Magnetic Materials, IEEE Transactions on Electron Devices and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact