H. Hada

1.6k total citations
107 papers, 1.2k citations indexed

About

H. Hada is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Cellular and Molecular Neuroscience. According to data from OpenAlex, H. Hada has authored 107 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 17 papers in Cellular and Molecular Neuroscience. Recurrent topics in H. Hada's work include Advanced Memory and Neural Computing (69 papers), Semiconductor materials and devices (53 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). H. Hada is often cited by papers focused on Advanced Memory and Neural Computing (69 papers), Semiconductor materials and devices (53 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). H. Hada collaborates with scholars based in Japan, South Korea and United States. H. Hada's co-authors include Toshitsugu Sakamoto, Munehiro Tada, Naoki Banno, Masayuki Terai, Koichiro Okamoto, Tadahiko Sugibayashi, Miharu Miyamura, Kazushi Amanuma, T. Kunio and Masakazu Aono and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Hada

98 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Hada Japan 20 1.1k 239 216 181 114 107 1.2k
Lang Zeng China 20 1.2k 1.1× 266 1.1× 279 1.3× 161 0.9× 66 0.6× 102 1.4k
B. Butcher United States 16 1.0k 1.0× 608 2.5× 257 1.2× 136 0.8× 210 1.8× 26 1.3k
G.H. Koh South Korea 13 871 0.8× 258 1.1× 363 1.7× 48 0.3× 151 1.3× 35 1.0k
Chrong Jung Lin Taiwan 17 1.0k 0.9× 183 0.8× 99 0.5× 88 0.5× 44 0.4× 106 1.1k
Chikako Yoshida Japan 12 648 0.6× 228 1.0× 244 1.1× 99 0.5× 106 0.9× 45 785
R. Rodrı́guez Spain 24 2.1k 1.9× 91 0.4× 150 0.7× 169 0.9× 39 0.3× 165 2.1k
T. Hussain United States 12 1.0k 0.9× 112 0.5× 119 0.6× 372 2.1× 35 0.3× 42 1.1k
Hongsik Jeong South Korea 15 728 0.7× 106 0.4× 528 2.4× 48 0.3× 135 1.2× 43 910
P. Mazoyer France 17 977 0.9× 458 1.9× 219 1.0× 26 0.1× 110 1.0× 42 1.2k
G. Molas France 25 1.9k 1.8× 168 0.7× 531 2.5× 240 1.3× 54 0.5× 142 2.0k

Countries citing papers authored by H. Hada

Since Specialization
Citations

This map shows the geographic impact of H. Hada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Hada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Hada more than expected).

Fields of papers citing papers by H. Hada

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Hada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Hada. The network helps show where H. Hada may publish in the future.

Co-authorship network of co-authors of H. Hada

This figure shows the co-authorship network connecting the top 25 collaborators of H. Hada. A scholar is included among the top collaborators of H. Hada based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Hada. H. Hada is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Banno, Naoki, Koichiro Okamoto, Hideaki Numata, et al.. (2019). Three-fold improved set-voltage variability of a Cu atom switch with a split electrode for very-large-scale integration. Japanese Journal of Applied Physics. 59(SG). SGGB09–SGGB09. 2 indexed citations
3.
Nebashi, Ryusuke, A. Morioka, Naoki Banno, et al.. (2019). An atom-switch-based field-programmable gate array with optimized driving capability buffer. Japanese Journal of Applied Physics. 58(SB). SBBB04–SBBB04. 1 indexed citations
4.
Tsuji, Y., Toshitsugu Sakamoto, A. Morioka, et al.. (2016). Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic. Japanese Journal of Applied Physics. 55(4S). 04EF01–04EF01. 1 indexed citations
5.
Banno, Naoki, Munehiro Tada, Toshitsugu Sakamoto, et al.. (2015). Mechanism of OFF-state lifetime improvement in complementary atom switch. Japanese Journal of Applied Physics. 54(4S). 04DD08–04DD08. 1 indexed citations
6.
Sakamoto, Toshitsugu, Y. Tsuji, Munehiro Tada, et al.. (2015). 0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM. 1–3. 1 indexed citations
7.
Sakamoto, Toshitsugu, Y. Tsuji, Munehiro Tada, et al.. (2015). 0.5-V Highly Power-Efficient Programmable Logic using Nonvolatile Configuration Switch in BEOL. 236–239. 12 indexed citations
8.
Okamoto, Katsunari, Munehiro Tada, Naoki Banno, et al.. (2013). Bidirectional TaO-diode-selected, complementary atom switch (DCAS) for area-efficient, nonvolatile crossbar switch block. Symposium on VLSI Technology. 4 indexed citations
9.
Tada, Munehiro, Toshitsugu Sakamoto, Naoki Banno, et al.. (2012). Improved Off-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage. IEEE Transactions on Electron Devices. 59(9). 2357–2362. 23 indexed citations
10.
Banno, Naoki, Toshitsugu Sakamoto, Munehiro Tada, et al.. (2011). ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device. Japanese Journal of Applied Physics. 50(7R). 74201–74201. 11 indexed citations
11.
Tada, Munehiro, et al.. (2011). Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch. IEEE Transactions on Electron Devices. 58(12). 4398–4406. 50 indexed citations
12.
Utsumi, Hiroaki, H. Honjo, Ryusuke Nebashi, et al.. (2008). Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics. 47(4S). 2714–2714. 25 indexed citations
13.
Jinnai, Butsurin, et al.. (2007). Plasma irradiation damages to magnetic tunneling junction devices. Journal of Applied Physics. 102(7). 10 indexed citations
14.
Shimura, Kei, Norikazu Ohshima, S. Miura, et al.. (2006). Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM. IEEE Transactions on Magnetics. 42(10). 2736–2738. 6 indexed citations
15.
Sakamoto, T., Munehiro Tada, Naoki Banno, et al.. (2006). Nonvolatile solid-electrolyte switch embedded into Cu interconnect. 130–131. 4 indexed citations
16.
Suzuki, Tetsuya, Yoshiyuki Fukumoto, K. Mori, et al.. (2005). Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current. 4. 188–189. 7 indexed citations
17.
Amano, M., H. Aikawa, Tetsuzo Ueda, et al.. (2004). Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell. 571–574. 10 indexed citations
18.
Yamada, J., Hiroki Koike, H. Toyoshima, et al.. (2001). NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors. IEEE Journal of Solid-State Circuits. 36(3). 522–527. 49 indexed citations
19.
Amanuma, Kazushi, et al.. (2000). Polarization reversal kinetics of a lead zirconate titanate thin-film capacitor for nonvolatile memory. Journal of Applied Physics. 88(6). 3445–3447. 13 indexed citations
20.
Hada, H., et al.. (1993). TiN as a Phosphorus Outdiffusion Barrier Layer for WSi_x/Doped-Polysilicon Structures (Special Issue on Sub-Half Micron Si Device and Process Technologies). IEICE Transactions on Electronics. 76(4). 613–625. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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