H. Hada

1.6k citations

107 papers · 1.2k indexed · h-index 20

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing 69
- Semiconductor materials and devices 53
- Ferroelectric and Negative Capacitance Devices 39
- Molecular Junctions and Nanostructures 8
Hardware and Architecture top 5%
Cellular and Molecular Neuroscience top 10%
- Neuroscience and Neural Engineering 17
Atomic and Molecular Physics, and Optics top 10%
- Magnetic properties of thin films 19
Electronic, Optical and Magnetic Materials
Materials Chemistry
- Ferroelectric and Piezoelectric Materials 6
Computational Theory and Mathematics
- Quantum-Dot Cellular Automata 5

Co-authors: Toshitsugu Sakamoto Munehiro Tada Naoki Banno Masayuki Terai Koichiro Okamoto Tadahiko Sugibayashi Miharu Miyamura Kazushi Amanuma
Cited by: Electrical and Electronic Engineering Hardware and Architecture Cellular and Molecular Neuroscience
Journals: Japanese Journal of Applied Physics (18 papers)IEEE Transactions on Electron Devices (9 papers)Journal of Applied Physics (5 papers)
Partner nations: Japan South Korea United States

In The Last Decade

H. Hada

98 papers receiving 1.1k citations

Peers

Countries citing papers authored by H. Hada

Since Specialization

Citations

This map shows the geographic impact of H. Hada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Hada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Hada more than expected).

Fields of papers citing papers by H. Hada

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Hada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Hada. The network helps show where H. Hada may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Hada, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Hada Line = papers co-authored together H. Hada links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	3x Improved Set-voltage Variability of Cu Atom Switch with Split-electrode for Very Large Scale Integration Leonardo Correia Santana Decanio,M. Antony Robert Raj,Hideaki Numata,JOHN T. KELLER,M. Titcat,Ryusuke Nebashi,Chunhua Xiong,H. Hada,Tadahiko Sugibayashi,T. Sakamoto,Aurélie Métayer	2019	1
2	Three-fold improved set-voltage variability of a Cu atom switch with a split electrode for very-large-scale integration Japanese Journal of Applied Physics ·Naoki Banno,Koichiro Okamoto,Hideaki Numata,Noriyuki Iguchi,M. Titcat,Ryusuke Nebashi,Xu Bai,H. Hada,Tadahiko Sugibayashi,Toshitsugu Sakamoto,Munehiro Tada	2019	2
3	An atom-switch-based field-programmable gate array with optimized driving capability buffer Japanese Journal of Applied Physics ·Е.В. Лесных,Sawaki Miho,Ryusuke Nebashi,A. Morioka,Naoki Banno,Koichiro Okamoto,Hideaki Numata,H. Hada,Tadahiko Sugibayashi,Toshitsugu Sakamoto,Munehiro Tada	2019	1
4	Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic Japanese Journal of Applied Physics ·Е.В. Лесных,Y. Tsuji,Toshitsugu Sakamoto,A. Morioka,Sawaki Miho,Munehiro Tada,Naoki Banno,Koichiro Okamoto,Noriyuki Iguchi,H. Hada	2016	1
5	Mechanism of OFF-state lifetime improvement in complementary atom switch Japanese Journal of Applied Physics ·Naoki Banno,Munehiro Tada,Toshitsugu Sakamoto,Sawaki Miho,Koichiro Okamoto,Noriyuki Iguchi,Y. Shimomura,H. Hada	2015	1
6	0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM Toshitsugu Sakamoto,Y. Tsuji,Munehiro Tada,Tetiana Skypets,Takumi Hasegawa,Y. Yamamoto,一夫松本,Hari Vamsi Valluru,Naoki Banno,Sawaki Miho,Koichiro Okamoto,Noriyuki Iguchi,Santalia Napitupulu,H. Oda,Shiro Kamohara,Sociedad Científica Argentina,Nobuyuki Sugii,H. Hada	2015	1
7	0.5-V Highly Power-Efficient Programmable Logic using Nonvolatile Configuration Switch in BEOL Sawaki Miho,Toshitsugu Sakamoto,Y. Tsuji,Munehiro Tada,Naoki Banno,Koichiro Okamoto,Noriyuki Iguchi,H. Hada	2015	12
8	Bidirectional TaO-diode-selected, complementary atom switch (DCAS) for area-efficient, nonvolatile crossbar switch block Symposium on VLSI Technology ·Katsunari Okamoto,Munehiro Tada,Naoki Banno,Toshitsugu Sakamoto,Miharu Miyamura,Hedvig M C D Landenius Enegren,Y. Shimomura,H. Hada	2013	4
9	Improved Off-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage IEEE Transactions on Electron Devices ·Munehiro Tada,Toshitsugu Sakamoto,Sawaki Miho,Naoki Banno,Koichiro Okamoto,Noriyuki Iguchi,H. Hada	2012	23
10	ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device Japanese Journal of Applied Physics ·Naoki Banno,Toshitsugu Sakamoto,Munehiro Tada,Sawaki Miho,Koichiro Okamoto,H. Hada,Masakazu Aono	2011	11
11	Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch IEEE Transactions on Electron Devices ·Munehiro Tada,Koichiro Okamoto,Toshitsugu Sakamoto,Sawaki Miho,Naoki Banno,H. Hada	2011	50
12	Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition Japanese Journal of Applied Physics ·Alessia Francone,Mona A. Allam,Hiroaki Utsumi,H. Honjo,Ryusuke Nebashi,Iwid Hidayah Putri,Norikazu Ohshima,Tadahiko Sugibayashi,H. Hada,Y. Shimomura,Yasmin Lima Backsmann,Masahiko Inoue,N. Kasai	2008	25
13	Plasma irradiation damages to magnetic tunneling junction devices Journal of Applied Physics ·Laura Fox,Butsurin Jinnai,Yoshiyuki Fukumoto,Norikazu Ohshima,H. Hada,Seiji Samukawa	2007	10
14	Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM IEEE Transactions on Magnetics ·Kei Shimura,Norikazu Ohshima,S. Miura,Ryusuke Nebashi,T. Suzuki,H. Hada,S. Tahara,H. Aikawa,Tetsuzo Ueda,T. Kajiyama,H. Yoda	2006	6
15	Nonvolatile solid-electrolyte switch embedded into Cu interconnect T. Sakamoto,Munehiro Tada,Naoki Banno,Y. Tsuji,Y. Saitoh,Jeremy Rodgers,H. Hada,Hedvig M C D Landenius Enegren,Masakazu Aono	2006	4
16	Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current Tetsuya Suzuki,Yoshiyuki Fukumoto,K. Mori,H. Honjo,Ryusuke Nebashi,S. Miura,K. Nagahara,S. Saito,Hideaki Numata,Kunihiro Tsuji,Tadahiko Sugibayashi,H. Hada,N. Ishiwata,Agarwal Ir,S. Ikegawa,H. Yoda,S. Tahara	2005	7
17	Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell Agarwal Ir,M. Amano,H. Aikawa,Tetsuzo Ueda,T. Kishi,S. Ikegawa,K. Tsuchida,H. Yoda,H.-U. Yee,Y. Fukuzumi,孝司小西,A. Nitayama,Kei Shimura,Y. Kato,S. Miura,N. Ishiwata,H. Hada,(unknown)	2004	10
18	NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors IEEE Journal of Solid-State Circuits ·Juan Pablo de,J. Yamada,Hiroki Koike,H. Toyoshima,Kazushi Amanuma,Lance Schmieder,T. Tatsumi,Ruoyao Sun,H. Hada,T. Kunio	2001	49
19	Polarization reversal kinetics of a lead zirconate titanate thin-film capacitor for nonvolatile memory Journal of Applied Physics ·V Levin Vitalij,Kazushi Amanuma,H. van Lonkhuijsen,Toru Tatsumi,Hiroki Koike,H. Hada	2000	13
20	TiN as a Phosphorus Outdiffusion Barrier Layer for WSi_x/Doped-Polysilicon Structures (Special Issue on Sub-Half Micron Si Device and Process Technologies) IEICE Transactions on Electronics ·Rosalind Eve,H. Hada,T. Kunio	1993	1

About H. Hada

H. Hada is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Electrochemistry, having authored 107 papers that have together received 1.2k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (69 papers), Semiconductor materials and devices (53 papers), Ferroelectric and Negative Capacitance Devices (39 papers), Magnetic properties of thin films (19 papers), Neuroscience and Neural Engineering (17 papers), Molecular Junctions and Nanostructures (8 papers), Ferroelectric and Piezoelectric Materials (6 papers) and Quantum-Dot Cellular Automata (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Hardware and Architecture (96 citations), Cellular and Molecular Neuroscience (181 citations), Atomic and Molecular Physics, and Optics (239 citations) and Electronic, Optical and Magnetic Materials (114 citations). H. Hada has collaborated with scholars based in Japan, South Korea and United States. Frequent co-authors include Toshitsugu Sakamoto, Munehiro Tada, Naoki Banno, Masayuki Terai, Koichiro Okamoto, Tadahiko Sugibayashi, Miharu Miyamura, Kazushi Amanuma, T. Kunio and Masakazu Aono. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of Applied Physics, IEEE Electron Device Letters and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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