Hareesh Chandrasekar

525 total citations
33 papers, 416 citations indexed

About

Hareesh Chandrasekar is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Hareesh Chandrasekar has authored 33 papers receiving a total of 416 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 21 papers in Condensed Matter Physics and 15 papers in Materials Chemistry. Recurrent topics in Hareesh Chandrasekar's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor materials and devices (19 papers) and Ga2O3 and related materials (8 papers). Hareesh Chandrasekar is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor materials and devices (19 papers) and Ga2O3 and related materials (8 papers). Hareesh Chandrasekar collaborates with scholars based in India, United States and United Kingdom. Hareesh Chandrasekar's co-authors include Srinivasan Raghavan, Michael J. Uren, Martin Kuball, Siddharth Rajan, Manikant Singh, Digbijoy N. Nath, Towhidur Razzak, H. Hirshy, Trevor Martin and P.J. Tasker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

Hareesh Chandrasekar

32 papers receiving 399 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hareesh Chandrasekar India 14 289 269 169 159 77 33 416
Sameer Joglekar United States 9 317 1.1× 387 1.4× 167 1.0× 176 1.1× 61 0.8× 10 482
Christopher Hatem United States 11 260 0.9× 389 1.4× 124 0.7× 157 1.0× 153 2.0× 33 503
B. Cui United States 12 370 1.3× 232 0.9× 205 1.2× 258 1.6× 60 0.8× 23 446
Quanbin Zhou China 12 311 1.1× 224 0.8× 133 0.8× 157 1.0× 79 1.0× 28 376
Tomohiro Nozawa Japan 5 331 1.1× 334 1.2× 156 0.9× 214 1.3× 122 1.6× 5 457
Wei-Hung Kuo Taiwan 10 239 0.8× 253 0.9× 162 1.0× 135 0.8× 72 0.9× 36 386
Yumin Zhang China 10 200 0.7× 171 0.6× 169 1.0× 110 0.7× 68 0.9× 49 320
Dolar Khachariya United States 12 362 1.3× 184 0.7× 108 0.6× 209 1.3× 86 1.1× 35 399
Yueh-Chin Lin Taiwan 12 231 0.8× 324 1.2× 90 0.5× 118 0.7× 102 1.3× 52 402
Christian Wurm United States 12 420 1.5× 283 1.1× 108 0.6× 193 1.2× 134 1.7× 27 459

Countries citing papers authored by Hareesh Chandrasekar

Since Specialization
Citations

This map shows the geographic impact of Hareesh Chandrasekar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hareesh Chandrasekar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hareesh Chandrasekar more than expected).

Fields of papers citing papers by Hareesh Chandrasekar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hareesh Chandrasekar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hareesh Chandrasekar. The network helps show where Hareesh Chandrasekar may publish in the future.

Co-authorship network of co-authors of Hareesh Chandrasekar

This figure shows the co-authorship network connecting the top 25 collaborators of Hareesh Chandrasekar. A scholar is included among the top collaborators of Hareesh Chandrasekar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hareesh Chandrasekar. Hareesh Chandrasekar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Chandrasekar, Hareesh, et al.. (2023). Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications. IEEE Transactions on Electron Devices. 70(4). 1622–1627. 7 indexed citations
3.
Yang, Hao, Honggyu Kim, Hareesh Chandrasekar, et al.. (2021). Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors. Applied Physics Letters. 118(4). 6 indexed citations
4.
Kumar, V., Shashwat Rathkanthiwar, Hareesh Chandrasekar, et al.. (2021). Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. ACS Applied Nano Materials. 4(7). 6734–6744. 7 indexed citations
5.
Gunning, Brendan, Hareesh Chandrasekar, Mary H. Crawford, et al.. (2021). Low voltage drop tunnel junctions grown monolithically by MOCVD. Applied Physics Letters. 118(5). 13 indexed citations
6.
Chandrasekar, Hareesh, et al.. (2021). Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. Journal of Applied Physics. 130(7). 10 indexed citations
7.
Chandrasekar, Hareesh, et al.. (2020). Carrier Transport in Graphene Field‐Effect Transistors on Gated Polar Nitride Substrates. physica status solidi (a). 217(16). 5 indexed citations
8.
9.
Chandrasekar, Hareesh, Michael J. Uren, H. Hirshy, et al.. (2019). Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology. IEEE Transactions on Electron Devices. 66(4). 1681–1687. 24 indexed citations
10.
Shankar, Bhawani, et al.. (2019). First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 66(8). 3433–3440. 15 indexed citations
11.
Yang, Hao, Caiyu Wang, Omor Shoron, et al.. (2019). Nanoscale etching of perovskite oxides for field effect transistor applications. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(1). 11 indexed citations
12.
Chandrasekar, Hareesh, Manikant Singh, James W. Pomeroy, et al.. (2019). Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices. Applied Physics Express. 12(2). 24003–24003. 12 indexed citations
13.
Chandrasekar, Hareesh, et al.. (2018). The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. Journal of Applied Physics. 123(16). 14 indexed citations
14.
Chandrasekar, Hareesh, Sandeep Kumar, K. Ganapathi, et al.. (2018). Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. IEEE Transactions on Electron Devices. 65(9). 3711–3718. 11 indexed citations
15.
Chandrasekar, Hareesh, Michael J. Uren, H. Hirshy, et al.. (2018). Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates. IEEE Electron Device Letters. 39(10). 1556–1559. 32 indexed citations
16.
Bhattacharjee, Shubhadeep, K. Ganapathi, Hareesh Chandrasekar, et al.. (2016). Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs. Advanced Electronic Materials. 3(1). 22 indexed citations
17.
Chandrasekar, Hareesh, et al.. (2016). Intrinsic limits of channel transport hysteresis in graphene-SiO2interface and its dependence on graphene defect density. Journal of Physics D Applied Physics. 49(26). 265301–265301. 4 indexed citations
18.
Chandrasekar, Hareesh, et al.. (2015). Spotting 2D atomic layers on aluminum nitride thin films. Nanotechnology. 26(42). 425202–425202. 6 indexed citations
19.
Chandrasekar, Hareesh, Manikant Singh, Srinivasan Raghavan, & Navakanta Bhat. (2015). Estimation of background carrier concentration in fully depleted GaN films. Semiconductor Science and Technology. 30(11). 115018–115018. 11 indexed citations
20.
Chandrasekar, Hareesh & Digbijoy N. Nath. (2015). Electron mobility in few-layer MoxW1-xS2. Materials Research Express. 2(9). 95007–95007. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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