D.G. Hayes

1.0k citations

48 papers · 804 indexed · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena

Papers in

Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 10
Atomic and Molecular Physics, and Optics 26
- Semiconductor Quantum Structures and Devices 23
- Quantum and electron transport phenomena 10

Co-authors: Michael J. Uren Trevor Martin D. J. Wallis K.P. Hilton L. Eaves P.E. Simmonds M. S. Skolnick M. T. Emeny
Journals: Surface Science (4 papers)Physical review. B, Condensed matter (3 papers)IEEE Transactions on Electron Devices (2 papers)Semiconductor Science and Technology (2 papers)Electronics Letters (2 papers)
Partner nations: United Kingdom Australia United States

In The Last Decade

D.G. Hayes

46 papers receiving 764 citations

Peers

Countries citing papers authored by D.G. Hayes

Since Specialization

Citations

This map shows the geographic impact of D.G. Hayes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.G. Hayes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.G. Hayes more than expected).

Fields of papers citing papers by D.G. Hayes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.G. Hayes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.G. Hayes. The network helps show where D.G. Hayes may publish in the future.

Co-authors

The 25 scholars most cited alongside D.G. Hayes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.G. Hayes Line = papers co-authored together D.G. Hayes links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A high‐throughput method for screening surfactant additives and structure–property relationships for the removal of water from bitumen Journal of Surfactants and Detergents ·馒头老妖, Tzu‐Chi Kuo, David J. Brennan, Adam Schmitt, Yuhan Huang, Aleksandar Subie, Harpreet Singh, I. N. Druzhinin, Taylor Martin, 高井浩哉, D.G. Hayes, Rohini Gupta, Jonathan Moore, K A SOLONEN, Rumyana Bakalska	2025	0
2	150mm full wafer fabrication and characterization of 940nm emitting VCSELs for high-volume manufacture D.G. Hayes, Chatchapong Tangmanee, Hajime KANAZAWA, Ahmadi Fazlollah, Edward R. Downe, A. Sobiesierski, E Paniagua, Mizuki Isoggai, Stuart Thomas, U Hartman, K Kaveh, Samuel Shutts, W. Stone, Andrzej Szpociński, Hai Yeong Jeong, Peter M. Smowton	2021	1
3	GaN Doherty MMIC Power Amplifiers for Satellite Ka-band Downlink Cineca Institutional Research Information System (Tor Vergata University) ·Anna Piacibello, R. Beroukhim, Rocco Giofrè, D.G. Hayes, Roberto Quaglia, Vittorio Camarchia	2020	3
4	Electron transport lifetimes in InSb/Al_1-xIn_xSb quantum well 2DEGs Semiconductor Science and Technology ·D.G. Hayes, Edward R. Downe, Ann M. Blair, E.M. Kruys, Beryl L. Bellman, A. M. Gilbertson, L. F. Cohen, S. J. Zhang, Edmund Clarke, P. D. Buckle	2017	8
5	High performance InSb QWFETs for low power dissipation millimetre wave applications T. Ashley, M. T. Emeny, D.G. Hayes, K.P. Hilton, Richard Jefferies, J.O. Maclean, Stuart Smith, William Milligan, faezeh rahmani, Gail Williams	2010	2
6	Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·翔太上村, K. Kálna, Martin Kuball, D.G. Hayes, Michael J. Uren, Stan Ray	2009	1
7	Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering IEEE Transactions on Electron Devices ·Nandan Kumar, J. Benedikt, P.J. Tasker, D. J. Wallis, Florian Wessely, J.O. Maclean, D.G. Hayes, Michael J. Uren, Trevor Martin	2008	76
8	Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs ORCA Online Research @Cardiff (Cardiff University) ·Nandan Kumar, Xiao-Nan Yang, P.J. Tasker, D. J. Wallis, K.P. Hilton, J.O. Maclean, D.G. Hayes, Michael J. Uren, Trevor Martin	2007	2
9	Optimising AIGaN/GaN HFET designs for high efficiency ORCA Online Research @Cardiff ·Nandan Kumar, 唐炜, J. Benedikt, P.J. Tasker, K.P. Hilton, J.O. Maclean, D.G. Hayes, Michael J. Uren, Trevor Martin	2007	1
10	Indium Antimonide Based Technology for RF Applications ORCA Online Research @Cardiff (Cardiff University) ·T. Ashley, L. Buckle, M. T. Emeny, M. Fearn, D.G. Hayes, K.P. Hilton, Richard Jefferies, Trevor Martin, T. J. Phillips, Jeff Powell, Miguel Ángel de Pablo, D. J. Wallis, Peter Wilding	2006	6
11	Indium Antimonide Based Quantum Well FETs for Ultra-High Speed Electronics ECS Meeting Abstracts ·T. Ashley, L. Buckle, M. T. Emeny, M. Fearn, D.G. Hayes, Florian Wessely, Richard Jefferies, K. M. Khan, Abnadee Salaeh, Jeff Powell, Michael Kwok Chi-on, Michael J. Uren, D. J. Wallis, Peter Wilding, Suman Datta, R. Chau	2006	3
12	On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT IEEE Transactions on Electron Devices ·C. H. Oxley, Michael J. Uren, A. J. Coates, D.G. Hayes	2006	61
13	Control of Short-Channel Effects in GaN/AlGaN HFETs ORCA Online Research @Cardiff (Cardiff University) ·Michael J. Uren, D.G. Hayes, R.S. Balmer, D. J. Wallis, K.P. Hilton, J.O. Maclean, Trevor Martin, Nandan Kumar, 郭润杰, J. Benedikt, P.J. Tasker	2006	28
14	Fully planar 0.562μm/sup 2/ T-RAM cell in a 130nm SOI CMOS logic technology for high-density high-performance SRAMs Sunanda V.M. Dr. Hiremani Naik, Hyun‐Jin Cho, Abdu Mohamed, Rajesh Gupta, 伸吉亀山, Prinzing in Ulm, D.G. Hayes, Velliyur Kanniappan Gopalakrishnan	2005	18
15	High power microwave SiC MESFET technology K.P. Hilton, Michael J. Uren, D.G. Hayes, 佑子永吉, Kishida Akihiro, 武跃平, S.A. Faizullina	2003	3
16	Suppression of instabilities in 4H-SiC microwave MESFETs K.P. Hilton, Michael J. Uren, D.G. Hayes, Peter Wilding, Berend Smit	2002	11
17	Magneto-optics of wide modulation doped quantum wells: Landau level pinning phenomena Surface Science ·D.G. Hayes, M. S. Skolnick, D. M. Whittaker, P.E. Simmonds, L. L. Taylor, S. J. Bass, L. Eaves	1992	1
18	Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures Physical review. B, Condensed matter ·M. S. Skolnick, P.E. Simmonds, D.G. Hayes, A. W. Higgs, G. W. Smith, A. D. Pitt, C. R. Whitehouse, Alain Jaccard, C.R.H. White, L. Eaves, M. Henini, O. H. Hughes	1990	38
19	Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields Physical review. B, Condensed matter ·M. S. Skolnick, D.G. Hayes, P.E. Simmonds, A. W. Higgs, G. W. Smith, Alain Jaccard, C. R. Whitehouse, L. Eaves, M. Henini, O. H. Hughes, M. L. Leadbeater, D. P. Halliday	1990	67
20	Photoluminescence and transport studies of wide (InGa)As/InP quantum wells in high magnetic field Surface Science ·D.G. Hayes, M. S. Skolnick, L. Eaves, P.E. Simmonds, L. L. Taylor, S. J. Bass, K. J. Nash	1990	1

About D.G. Hayes

D.G. Hayes is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films and Biomedical Engineering, having authored 48 papers that have together received 804 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (23 papers), Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Silicon Carbide Semiconductor Technologies (11 papers), Quantum and electron transport phenomena (10 papers), GaN-based semiconductor devices and materials (10 papers), Radio Frequency Integrated Circuit Design (8 papers) and Semiconductor Lasers and Optical Devices (8 papers). The work is most often cited by research in Condensed Matter Physics (249 citations), Atomic and Molecular Physics, and Optics (476 citations), Electrical and Electronic Engineering (670 citations), Biomedical Engineering (121 citations) and Materials Chemistry (99 citations). D.G. Hayes has collaborated with scholars based in United Kingdom, Australia and United States. Frequent co-authors include Michael J. Uren, Trevor Martin, D. J. Wallis, K.P. Hilton, L. Eaves, P.E. Simmonds, M. S. Skolnick, M. T. Emeny, T. Ashley and Richard Jefferies. Their work appears in journals such as Surface Science, Physical review. B, Condensed matter, IEEE Transactions on Electron Devices, Semiconductor Science and Technology and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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