A. Stockman

642 citations

26 papers · 531 indexed · h-index 13

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 22
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 11
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 14
- Silicon Carbide Semiconductor Technologies 13
- Advancements in Semiconductor Devices and Circuit Design 6
Atomic and Molecular Physics, and Optics
Materials Chemistry
- ZnO doping and properties 5
Bioengineering
- Analytical Chemistry and Sensors 1
Polymers and Plastics
- Conducting polymers and applications 1

Co-authors: P. Moens Benoit Bakeroot Matteo Meneghini Gaudenzio Meneghesso Enrico Zanoni E. Canato Niels Posthuma Stefaan Decoutere
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Microelectronics Reliability (5 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (1 paper)
Partner nations: Belgium Italy United Kingdom

In The Last Decade

A. Stockman

25 papers receiving 517 citations

Peers

Countries citing papers authored by A. Stockman

Since Specialization

Citations

This map shows the geographic impact of A. Stockman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stockman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stockman more than expected).

Fields of papers citing papers by A. Stockman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Stockman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stockman. The network helps show where A. Stockman may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Stockman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Stockman Line = papers co-authored together A. Stockman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate Microelectronics Reliability ·H. M. Jeong,Annelotte Derkink,A. Stockman,Philippe-Jacques Dubois,P. Vanmeerbeek,M. Tack,A G Gukasian,Enrico Zanoni,Carlo De Santi,Matteo Meneghini	2025	0
2	$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout Research Padua Archive (University of Padua) ·Annelotte Derkink,Carlo De Santi,A. Stockman,Philippe-Jacques Dubois,P. Vanmeerbeek,M. Tack,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2024	1
3	Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate Applied Physics Express ·Annelotte Derkink,Carlo De Santi,Philippe-Jacques Dubois,Ankit Dixit,P. Vanmeerbeek,A. Stockman,M. Tack,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2024	1
4	Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress Microelectronics Reliability ·Annelotte Derkink,Carlo De Santi,A. Stockman,Philippe-Jacques Dubois,P. Vanmeerbeek,M. Tack,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2023	5
5	Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability ·A. Stockman,E. Canato,Matteo Meneghini,Gaudenzio Meneghesso,P. Moens,Benoit Bakeroot	2021	38
6	Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions Padua Research Archive (University of Padova) ·健一菜花,Matteo Meneghini,E. Canato,Kenzo Inagaki,Carlo De Santi,A. Stockman,Abhishek Banerjee,P. Moens,Seyed H. Saddathosseini,Gaudenzio Meneghesso	2020	6
7	OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution Microelectronics Reliability ·E. Canato,Matteo Meneghini,Carlo De Santi,健一菜花,A. Stockman,P. Moens,Enrico Zanoni,Gaudenzio Meneghesso	2020	23
8	Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress Applied Physics Letters ·健一菜花,Matteo Meneghini,E. Canato,Carlo De Santi,A. Stockman,Enrico Zanoni,P. Moens,Gaudenzio Meneghesso	2019	35
9	Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors Ghent University Academic Bibliography (Ghent University) ·Alaleh Tajalli,E. Canato,Philippe-Jacques Dubois,Matteo Meneghini,A. Stockman,P. Moens,Enrico Zanoni,Gaudenzio Meneghesso	2019	4
10	$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate Ghent University Academic Bibliography (Ghent University) ·E. Canato,健一菜花,Matteo Borga,Enrico Zanoni,Matteo Meneghini,Gaudenzio Meneghesso,A. Stockman,Abhishek Banerjee,P. Moens	2019	21
11	Differential Variable Base Charge Pumping ($\Delta-\text{CP}$) for SiO₂/SiC Interface Characterization Ghent University Academic Bibliography (Ghent University) ·P. Moens,A. Constant,A. Stockman,Célio Igor Gomes Alencar,Fredrik Allerstam	2019	3
12	ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping Microelectronics Reliability ·E. Canato,Matteo Meneghini,Philippe-Jacques Dubois,健一菜花,Kenzo Inagaki,Marco Barbato,A. Stockman,Abhishek Banerjee,P. Moens,Enrico Zanoni,Gaudenzio Meneghesso	2019	17
13	Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs Ghent University Academic Bibliography (Ghent University) ·A. Stockman,E. Canato,Matteo Meneghini,Gaudenzio Meneghesso,P. Moens,Benoit Bakeroot	2019	44
14	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman,Alaleh Tajalli,Matteo Meneghini,Michael J. Uren,D. Krishna Kanth,Simone Gerardin,Marta Bagatin,A. Paccagnella,Gaudenzio Meneghesso,Enrico Zanoni,P. Moens,Benoit Bakeroot	2018	19
15	Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman,健一菜花,Matteo Meneghini,Enrico Zanoni,Gaudenzio Meneghesso,Benoit Bakeroot,P. Moens	2018	88
16	Dynamic-ron control via proton irradiation in AlGaN/GaN transistors Ghent University Academic Bibliography (Ghent University) ·Alaleh Tajalli,A. Stockman,Matteo Meneghini,D. Krishna Kanth,Abhishek Banerjee,Simone Gerardin,Marta Bagatin,A. Paccagnella,Enrico Zanoni,M. Tack,Benoit Bakeroot,P. Moens,Gaudenzio Meneghesso	2018	4
17	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs Ghent University Academic Bibliography (Ghent University) ·A. Stockman,E. Canato,Alaleh Tajalli,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,P. Moens,Benoit Bakeroot	2018	46
18	Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors Microelectronics Reliability ·Alaleh Tajalli,E. Canato,Philippe-Jacques Dubois,Matteo Meneghini,A. Stockman,P. Moens,Enrico Zanoni,Gaudenzio Meneghesso	2018	16
19	Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron Bristol Research (University of Bristol) ·A. Stockman,Michael J. Uren,Alaleh Tajalli,Matteo Meneghini,Benoit Bakeroot,P. Moens	2017	12
20	Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Benoit Bakeroot,A. Stockman,Niels Posthuma,Steve Stoffels,Stefaan Decoutere	2017	94

About A. Stockman

A. Stockman is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Bioengineering and Materials Chemistry, having authored 26 papers that have together received 531 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (22 papers), Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (13 papers), Ga2O3 and related materials (11 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), ZnO doping and properties (5 papers), Analytical Chemistry and Sensors (1 paper) and Conducting polymers and applications (1 paper). The work is most often cited by research in Condensed Matter Physics (496 citations), Electronic, Optical and Magnetic Materials (230 citations), Electrical and Electronic Engineering (415 citations), Atomic and Molecular Physics, and Optics (93 citations) and Materials Chemistry (87 citations). A. Stockman has collaborated with scholars based in Belgium, Italy and United Kingdom. Frequent co-authors include P. Moens, Benoit Bakeroot, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, E. Canato, Niels Posthuma, Stefaan Decoutere, Steve Stoffels and Alaleh Tajalli. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, Applied Physics Letters, Thin Solid Films and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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