G. Simin

9.4k total citations · 1 hit paper
237 papers, 7.7k citations indexed

About

G. Simin is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, G. Simin has authored 237 papers receiving a total of 7.7k indexed citations (citations by other indexed papers that have themselves been cited), including 213 papers in Condensed Matter Physics, 166 papers in Electrical and Electronic Engineering and 87 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in G. Simin's work include GaN-based semiconductor devices and materials (213 papers), Semiconductor materials and devices (96 papers) and Ga2O3 and related materials (87 papers). G. Simin is often cited by papers focused on GaN-based semiconductor devices and materials (213 papers), Semiconductor materials and devices (96 papers) and Ga2O3 and related materials (87 papers). G. Simin collaborates with scholars based in United States, Russia and Lithuania. G. Simin's co-authors include M. S. Shur, R. Gaška, M. Asif Khan, X. Hu, M.A. Khan, Jinwei Yang, A. Koudymov, V. Adivarahan, J. Yang and Jianping Zhang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physics Today.

In The Last Decade

G. Simin

220 papers receiving 7.4k citations

Hit Papers

An assessment of wide bandgap semiconductors for power de... 2003 2026 2010 2018 2003 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. An assessment of wide bandgap semiconductors for power devices
    2003 463 citations J.L. Hudgins, G. Simin et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Simin United States 50 6.4k 4.8k 3.2k 2.0k 1.8k 237 7.7k
Nils Weimann Germany 24 5.2k 0.8× 3.7k 0.8× 2.7k 0.8× 2.0k 1.0× 2.1k 1.2× 163 6.8k
J. R. Shealy United States 33 6.3k 1.0× 4.5k 0.9× 2.9k 0.9× 2.7k 1.4× 2.0k 1.1× 133 7.5k
H. Morkoç United States 41 6.1k 1.0× 4.9k 1.0× 3.2k 1.0× 3.9k 2.0× 4.1k 2.3× 206 10.0k
M. Asif Khan United States 50 7.0k 1.1× 3.8k 0.8× 3.3k 1.0× 2.5k 1.3× 2.6k 1.4× 118 7.9k
Michael Wraback United States 31 2.3k 0.4× 2.1k 0.4× 2.1k 0.7× 1.3k 0.7× 2.1k 1.2× 168 4.5k
S. Strite United States 23 4.6k 0.7× 3.4k 0.7× 2.1k 0.6× 2.5k 1.3× 2.5k 1.4× 48 6.9k
Masahiko Sano Japan 25 3.4k 0.5× 1.4k 0.3× 1.3k 0.4× 1.6k 0.8× 1.6k 0.9× 44 4.0k
A. Y. Polyakov Russia 44 4.0k 0.6× 3.9k 0.8× 4.6k 1.4× 1.6k 0.8× 4.2k 2.3× 375 8.2k
S. Einfeldt Germany 39 4.7k 0.7× 2.0k 0.4× 2.6k 0.8× 1.4k 0.7× 2.6k 1.4× 231 5.7k
D. Dimos United States 36 3.2k 0.5× 1.9k 0.4× 2.4k 0.7× 1.6k 0.8× 3.8k 2.1× 91 6.8k

Countries citing papers authored by G. Simin

Since Specialization
Citations

This map shows the geographic impact of G. Simin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Simin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Simin more than expected).

Fields of papers citing papers by G. Simin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Simin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Simin. The network helps show where G. Simin may publish in the future.

Co-authorship network of co-authors of G. Simin

This figure shows the co-authorship network connecting the top 25 collaborators of G. Simin. A scholar is included among the top collaborators of G. Simin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Simin. G. Simin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Mamun, Abdullah, Kenneth Stephenson, Kamal Hussain, et al.. (2025). Extreme Bandgap Recessed‐Gate Metal Oxide Semiconductor Heterostructure Field Effect Transistors with Drain Current 0.28 A mm −1 and Threshold Voltage −1.5 V. physica status solidi (a). 222(23). 2 indexed citations
3.
Jamil, Tariq, M. Azizar Rahman, Muhammad Ali, et al.. (2025). Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping. Applied Physics Express. 18(2). 25501–25501. 2 indexed citations
4.
Hussain, Kamal, Abdullah Mamun, Michael E. Liao, et al.. (2023). High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates. Applied Physics Express. 16(1). 14005–14005. 21 indexed citations
5.
Mamun, Abdullah, et al.. (2023). Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate. Applied Physics Express. 16(6). 61001–61001. 23 indexed citations
6.
7.
Gaevski, Mikhail, Kamal Hussain, Abdullah Mamun, et al.. (2021). Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes. Applied Physics Express. 14(8). 84002–84002. 47 indexed citations
8.
Hussain, Kamal, Abdullah Mamun, Mikhail Gaevski, et al.. (2020). An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices. physica status solidi (a). 217(7). 6 indexed citations
9.
Gaevski, Mikhail, Kamal Hussain, Abdullah Mamun, et al.. (2020). Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs. Applied Physics Letters. 117(23). 9 indexed citations
10.
Hussain, Kamal, Abdullah Mamun, Mikhail Gaevski, et al.. (2020). High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V. Applied Physics Express. 14(1). 14003–14003. 10 indexed citations
11.
12.
Chava, Venkata S. N., et al.. (2017). High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor. Applied Physics Letters. 111(24). 19 indexed citations
13.
Deng, Jianyu, Jinwei Yang, X. Hu, et al.. (2010). Insertion loss and linearity of III‐nitride microwave switches. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2423–2425. 7 indexed citations
14.
Hudgins, J.L., G. Simin, & M.A. Khan. (2003). A new assessment of the use of wide bandgap semiconductors and the potential for GaN. 4. 1747–1752. 7 indexed citations
15.
Shatalov, M., G. Simin, V. Adivarahan, et al.. (2002). Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates. Japanese Journal of Applied Physics. 41(Part 1, No. 8). 5083–5087. 55 indexed citations
16.
Adivarahan, V., G. Simin, Gintautas Tamulaitis, et al.. (2001). Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors. Applied Physics Letters. 79(12). 1903–1905. 74 indexed citations
17.
Rumyantsev, S. L., Nezih Pala, M. S. Shur, et al.. (2001). LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS. Fluctuation and Noise Letters. 1(4). L221–L226. 15 indexed citations
18.
Rumyantsev, S. L., Nezih Pala, M. S. Shur, et al.. (2001). Thin n -GaN films with low level of 1/ f noise. Electronics Letters. 37(11). 720–721. 10 indexed citations
19.
Kuokštis, E., Jianping Zhang, Jun Yang, et al.. (2001). Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells. physica status solidi (b). 228(2). 559–562. 7 indexed citations
20.
Chitnis, A., Ajay Kumar, M. Shatalov, et al.. (2000). High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells. Applied Physics Letters. 77(23). 3800–3802. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Nils Weimann Breakdown of academic impact, for papers by J. R. Shealy Breakdown of academic impact, for papers by H. Morkoç Breakdown of academic impact, for papers by M. Asif Khan Breakdown of academic impact, for papers by Michael Wraback Breakdown of academic impact, for papers by S. Strite Breakdown of academic impact, for papers by Masahiko Sano Breakdown of academic impact, for papers by A. Y. Polyakov Breakdown of academic impact, for papers by S. Einfeldt Breakdown of academic impact, for papers by D. Dimos
Rankless by CCL
2026