G. Simin

9.4k citations

237 papers · 7.7k indexed · 1 hit paper · h-index 50

Condensed Matter Physics top 0.05%
- GaN-based semiconductor devices and materials 213
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials 87
Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices 96
- Silicon Carbide Semiconductor Technologies 47
- Advancements in Semiconductor Devices and Circuit Design 37
- Radio Frequency Integrated Circuit Design 32
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 45
Materials Chemistry top 2%
- ZnO doping and properties 21

Co-authors: M. S. Shur R. Gaška M. Asif Khan X. Hu M.A. Khan Jinwei Yang A. Koudymov V. Adivarahan
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (53 papers)IEEE Electron Device Letters (28 papers)Electronics Letters (13 papers)
Partner nations: United States Russia Lithuania

In The Last Decade

G. Simin

220 papers receiving 7.4k citations

Hit Papers

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Peers

Countries citing papers authored by G. Simin

Since Specialization

Citations

This map shows the geographic impact of G. Simin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Simin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Simin more than expected).

Fields of papers citing papers by G. Simin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Simin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Simin. The network helps show where G. Simin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. Simin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Simin Line = papers co-authored together G. Simin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Extreme Bandgap Al _0.63 Ga _0.37 N Quasivertical Schottky Barrier Diodes with a High Baliga Figure of Merit of 630 MW cm ⁻² physica status solidi (a) ·Jun Yamamoto,Changjae Lee,Kamal Hussain,Abdullah Mamun,星圆,Tariq Jamil,G. Simin,Asif Khan	2025	0
2	Extreme Bandgap Recessed‐Gate Metal Oxide Semiconductor Heterostructure Field Effect Transistors with Drain Current 0.28 A mm ⁻¹ and Threshold Voltage −1.5 V physica status solidi (a) ·Jun Yamamoto,Abdullah Mamun,Kenneth Stephenson,Kamal Hussain,Tariq Jamil,G. Simin,Asif Khan	2025	2
3	Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping Applied Physics Express ·Tariq Jamil,Jun Yamamoto,M. Azizar Rahman,Muhammad Ali,J. Y. Lin,Hongxing Jiang,G. Simin,Asif Khan	2025	2
4	High figure of merit extreme bandgap Al_0.87Ga_0.13N-Al_0.64Ga_0.36N heterostructures over bulk AlN substrates Applied Physics Express ·Kamal Hussain,Abdullah Mamun,S. Ram,Ampudia Márquez,Michael E. Liao,Kenny Huynh,Yekan Wang,Mark S. Goorsky,M. V. S. Chandrashekhar,G. Simin,Asif Khan	2023	21
5	Al_0.64Ga_0.36N channel MOSHFET on single crystal bulk AlN substrate Applied Physics Express ·Abdullah Mamun,Kamal Hussain,S. Ram,Ampudia Márquez,M. V. S. Chandrashekhar,G. Simin,Asif Khan	2023	23
6	Spatially resolved Fourier transform impedance spectroscopy: A technique to rapidly characterize interfaces, applied to a QD/SiC heterojunction Applied Physics Letters ·Jaime Moreno,G. Simin,Kamal Hussain,Asif Khan,Andrew B. Greytak,M. V. S. Chandrashekhar	2021	1
7	Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes Applied Physics Express ·S. Ram,Mikhail Gaevski,Kamal Hussain,Abdullah Mamun,M. V. S. Chandrashekhar,G. Simin,Asif Khan	2021	47
8	An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices physica status solidi (a) ·S. Ram,Kamal Hussain,Abdullah Mamun,Mikhail Gaevski,G. Simin,M. V. S. Chandrashekhar,Asif Khan	2020	6
9	Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs Applied Physics Letters ·Changjae Lee,Mikhail Gaevski,Kamal Hussain,Abdullah Mamun,M. V. S. Chandrashekhar,G. Simin,Asif Khan	2020	9
10	High-current recessed gate enhancement-mode ultrawide bandgap Al _x Ga_1−xN channel MOSHFET with drain current 0.48 A mm⁻¹ and threshold voltage +3.6 V Applied Physics Express ·Changjae Lee,Kamal Hussain,Abdullah Mamun,Mikhail Gaevski,G. Simin,M. V. S. Chandrashekhar,Asif Khan	2020	10
11	Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. Phys. Lett. 115, 213502 (2019)] Applied Physics Letters ·Jeffery Siracuse,Ampudia Márquez,Changjae Lee,Kamal Hussain,Virginia D. Wheeler,Charles R. Eddy,Mikhail Gaevski,G. Simin,M. V. S. Chandrashekhar,Asif Khan	2019	2
12	High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor Applied Physics Letters ·Venkata S. N. Chava,Julio Méndez Salazar,Shayna Rockow-Magnone,Asif Khan,G. Simin,Andrew B. Greytak,M. V. S. Chandrashekhar	2017	19
13	Insertion loss and linearity of III‐nitride microwave switches Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Jianyu Deng,Jinwei Yang,X. Hu,R. Gaška,Hanna Redkina,G. Simin,M. S. Shur	2010	7
14	A new assessment of the use of wide bandgap semiconductors and the potential for GaN J.L. Hudgins,G. Simin,M.A. Khan	2003	7
15	Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates Japanese Journal of Applied Physics ·M. Shatalov,G. Simin,V. Adivarahan,A. Chitnis,Shuai Wu,R. Pachipulusu,V. Mandavilli,Assia Alaoui Bensalah,Jianping Zhang,N. F. F. Batista,M. Asif Khan	2002	55
16	Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors Applied Physics Letters ·V. Adivarahan,G. Simin,Gintautas Tamulaitis,R. Srinivasan,Jun Yang,M. Asif Khan,M. S. Shur,R. Gaška	2001	74
17	LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS Fluctuation and Noise Letters ·S. L. Rumyantsev,Nezih Pala,M. S. Shur,M. E. Levinshteĭn,P. A. Ivanov,M. Asif Khan,G. Simin,Jae‐Hun Yang,X. Hu,Ahmad Tarakji,R. Gaška	2001	15
18	Thin n -GaN films with low level of 1/ f noise Electronics Letters ·S. L. Rumyantsev,Nezih Pala,M. S. Shur,R. Gaška,M. E. Levinshteĭn,M. Asif Khan,G. Simin,X. Hu,Jae‐Hun Yang	2001	10
19	Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells physica status solidi (b) ·E. Kuokštis,Jianping Zhang,Jun Yang,G. Simin,M. Asif Khan,R. Gaška,M. S. Shur	2001	7
20	High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells Applied Physics Letters ·A. Chitnis,Ajay Kumar,M. Shatalov,V. Adivarahan,A. V. Lunev,Jie Yang,G. Simin,M. Asif Khan,R. Gaška,M. S. Shur	2000	65

About G. Simin

G. Simin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 237 papers that have together received 7.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (213 papers), Semiconductor materials and devices (96 papers), Ga2O3 and related materials (87 papers), Silicon Carbide Semiconductor Technologies (47 papers), Semiconductor Quantum Structures and Devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers), Radio Frequency Integrated Circuit Design (32 papers) and ZnO doping and properties (21 papers). The work is most often cited by research in Condensed Matter Physics (6.4k citations), Electronic, Optical and Magnetic Materials (3.2k citations), Electrical and Electronic Engineering (4.8k citations), Atomic and Molecular Physics, and Optics (2.0k citations) and Materials Chemistry (1.8k citations). G. Simin has collaborated with scholars based in United States, Russia and Lithuania. Frequent co-authors include M. S. Shur, R. Gaška, M. Asif Khan, X. Hu, M.A. Khan, Jinwei Yang, A. Koudymov, V. Adivarahan, J. Yang and Jianping Zhang. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Electronics Letters, Japanese Journal of Applied Physics and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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