P. Coppens

461 total citations
20 papers, 344 citations indexed

About

P. Coppens is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanics of Materials. According to data from OpenAlex, P. Coppens has authored 20 papers receiving a total of 344 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 9 papers in Condensed Matter Physics and 4 papers in Mechanics of Materials. Recurrent topics in P. Coppens's work include Semiconductor materials and devices (15 papers), GaN-based semiconductor devices and materials (9 papers) and Silicon Carbide Semiconductor Technologies (8 papers). P. Coppens is often cited by papers focused on Semiconductor materials and devices (15 papers), GaN-based semiconductor devices and materials (9 papers) and Silicon Carbide Semiconductor Technologies (8 papers). P. Coppens collaborates with scholars based in Belgium, United States and United Kingdom. P. Coppens's co-authors include P. Moens, M. Tack, E. De Backer, P. Vanmeerbeek, A. Constant, H. Ziad, Abhishek Banerjee, Herbert De Vleeschouwer, Gaudenzio Meneghesso and Michael J. Uren and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Microelectronics Reliability.

In The Last Decade

P. Coppens

20 papers receiving 335 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Coppens Belgium 8 306 234 90 47 29 20 344
Hailian Liang China 9 342 1.1× 184 0.8× 69 0.8× 41 0.9× 30 1.0× 30 377
W. Nagy United States 9 506 1.7× 283 1.2× 54 0.6× 43 0.9× 34 1.2× 19 544
Shuichi Yagi Japan 8 206 0.7× 241 1.0× 121 1.3× 47 1.0× 55 1.9× 31 271
Dongping Xiao Belgium 8 356 1.2× 281 1.2× 56 0.6× 59 1.3× 20 0.7× 28 399
Yi-Wei Lian Taiwan 8 275 0.9× 319 1.4× 169 1.9× 73 1.6× 40 1.4× 10 346
A. Mohanbabu India 12 248 0.8× 257 1.1× 102 1.1× 95 2.0× 40 1.4× 27 319
Geetak Gupta United States 11 216 0.7× 231 1.0× 100 1.1× 91 1.9× 67 2.3× 25 290
Markus Cäsar Germany 10 371 1.2× 415 1.8× 143 1.6× 58 1.2× 65 2.2× 17 430
Cen Kong China 9 278 0.9× 301 1.3× 128 1.4× 48 1.0× 86 3.0× 21 361
S.S. Park South Korea 10 217 0.7× 236 1.0× 101 1.1× 120 2.6× 63 2.2× 22 295

Countries citing papers authored by P. Coppens

Since Specialization
Citations

This map shows the geographic impact of P. Coppens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Coppens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Coppens more than expected).

Fields of papers citing papers by P. Coppens

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Coppens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Coppens. The network helps show where P. Coppens may publish in the future.

Co-authorship network of co-authors of P. Coppens

This figure shows the co-authorship network connecting the top 25 collaborators of P. Coppens. A scholar is included among the top collaborators of P. Coppens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Coppens. P. Coppens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Constant, A., et al.. (2021). The role of AlGaN/GaN heterostructure properties in barrier height variation of Au-free ohmic contacts. Materials Science in Semiconductor Processing. 129. 105806–105806. 4 indexed citations
2.
Constant, A., et al.. (2021). Selective wet etching and hydrolysis of polycrystalline AlN films grown by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing. 137. 106157–106157. 6 indexed citations
3.
Constant, A., Eduardo Solano, Davy Deduytsche, et al.. (2020). Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures. Journal of Applied Physics. 127(21). 4 indexed citations
4.
Moens, P., Abhishek Banerjee, P. Coppens, Frederick Declercq, & M. Tack. (2016). AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV). 455–458. 14 indexed citations
5.
Constant, A., P. Coppens, Wentao Qin, et al.. (2016). Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures. Journal of Applied Physics. 120(10). 33 indexed citations
6.
7.
Moens, P., P. Vanmeerbeek, Abhishek Banerjee, et al.. (2015). On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices. Research Padua Archive (University of Padua). 37–40. 93 indexed citations
8.
Moens, P., Abhishek Banerjee, P. Coppens, et al.. (2015). Technology and design of GaN power devices. 64–67. 4 indexed citations
9.
Moens, P., Abhishek Banerjee, P. Vanmeerbeek, et al.. (2014). An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric. 374–377. 87 indexed citations
10.
Roig, J., et al.. (2012). A high-speed silicon FET for efficient DC-DC power conversion. 85–88. 10 indexed citations
11.
Roig, J., et al.. (2011). Wafer Bevel Protection During Deep Reactive Ion Etching. IEEE Transactions on Semiconductor Manufacturing. 24(2). 358–365. 6 indexed citations
12.
Coppens, P., et al.. (2007). TLP Characterization of large gate width devices. Microelectronics Reliability. 47(9-11). 1462–1467. 6 indexed citations
13.
Moens, P., et al.. (2005). Reliability assessment of deep trench isolation structures. 573–577. 9 indexed citations
14.
Moens, P., et al.. (2004). Development of a robust 50V 0.35 μm based Smart Power Technology using trench isolation. 182–185. 23 indexed citations
15.
bosch, G. Van den, et al.. (2004). Impact of charging on breakdown in deep trench isolation structures [parasitic MOSFET example]. 513–516. 5 indexed citations
16.
Salm, Cora, et al.. (2004). Plasma-Charging Damage of Floating MIM Capacitors. IEEE Transactions on Electron Devices. 51(6). 1017–1024. 16 indexed citations
17.
Coppens, P., et al.. (2004). Deep trench isolation for a 50 V 0.35 μm based smart power technology. 191–194. 7 indexed citations
18.
bosch, G. Van den, et al.. (2003). Impact of charging on breakdown in deep trench isolation structures. 513–516. 4 indexed citations
19.
20.
Backer, E. De, et al.. (2001). Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors. Microelectronics Reliability. 41(9-10). 1403–1407. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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